scholarly journals Thermodynamic Stability, Thermoelectric, Elastic and Electronic Structure Properties of ScMN2-Type (M = V, Nb, Ta) Phases Studied by ab initio Calculations

2019 ◽  
Vol 4 (2) ◽  
pp. 36 ◽  
Author(s):  
Robert Pilemalm ◽  
Leonid Pourovskii ◽  
Igor Mosyagin ◽  
Sergei Simak ◽  
Per Eklund
Keyword(s):  
Thermoelectric Properties ◽  
Thermodynamic Stability ◽  
First Principles ◽  
Density Functional ◽  
Mixing Enthalpy ◽  
First Principles Calculations ◽  
Electronic Density ◽  
Functional Theory ◽  
Small Band ◽  
Structure Properties

ScMN2-type (M = V, Nb, Ta) phases are layered materials that have been experimentally reported for M = Ta and Nb, but they have up to now not been much studied. However, based on the properties of binary ScN and its alloys, it is reasonable to expect these phases to be of relevance in a range of applications, including thermoelectrics. Here, we have used first-principles calculations to study their thermodynamic stability, elastic, thermoelectric and electronic properties. We have used density functional theory to calculate lattice parameters, the mixing enthalpy of formation and electronic density of states as well as the thermoelectric properties and elastic constants (cij), bulk (B), shear (G) and Young’s (E) modulus, which were compared with available experimental data. Our results indicate that the considered systems are thermodynamically and elastically stable and that all are semiconductors with small band gaps. All three materials display anisotropic thermoelectric properties and indicate the possibility to tune these properties by doping. In particular, ScVN2, featuring the largest band gap exhibits a particularly large and strongly doping-sensitive Seebeck coefficient.

Thermodynamic Stability of Hexagonal and Rhombohedral Bn at Cvd Conditions from Van der Waals Corrected First Principles Calculations

2019 ◽  
Author(s):  
Henrik Pedersen ◽  
Björn Alling ◽  
Hans Högberg ◽  
Annop Ektarawong
Keyword(s):  
Thin Films ◽  
Thermodynamic Stability ◽  
First Principles ◽  
Thermal Equilibrium ◽  
Density Functional ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
First Principles Calculations ◽  
Functional Theory ◽  
The Stability

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.

scholarly journals Electronic, optical and thermoelectric properties of Fe2ZrP compound determined via first-principles calculations

RSC Advances ◽  
2019 ◽  
Vol 9 (44) ◽  
pp. 25900-25911 ◽  
Author(s):  
Esmaeil Pakizeh ◽  
Jaafar Jalilian ◽  
Mahnaz Mohammadi
Keyword(s):  
Density Functional Theory ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Density Functional ◽  
Transport Theory ◽  
First Principles Calculations ◽  
Boltzmann Transport ◽  
Functional Theory ◽  
Boltzmann Transport Theory ◽  
The Density Functional Theory

In this study, based on the density functional theory and semi-classical Boltzmann transport theory, we investigated the structural, thermoelectric, optical and phononic properties of the Fe2ZrP compound.

Thermodynamic Stability of Hexagonal and Rhombohedral Bn at Cvd Conditions from Van der Waals Corrected First Principles Calculations

2019 ◽  
Author(s):  
Henrik Pedersen ◽  
Björn Alling ◽  
Hans Högberg ◽  
Annop Ektarawong
Keyword(s):  
Thin Films ◽  
Thermodynamic Stability ◽  
First Principles ◽  
Thermal Equilibrium ◽  
Density Functional ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
First Principles Calculations ◽  
Functional Theory ◽  
The Stability

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.

scholarly journals Effect of Doping on the Thermoelectric Properties of Thallium Tellurides Using First Principles Calculations

2011 ◽  
Vol 172-174 ◽  
pp. 985-989 ◽  
Author(s):  
Philippe Jund ◽  
Xiao Ma Tao ◽  
Romain Viennois ◽  
Jean Claude Tédenac
Keyword(s):  
Experimental Data ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculations ◽  
Pure Compound ◽  
Functional Theory ◽  
Lattice Constants ◽  
Thallium Tellurides ◽  
Good Agreement

We present a study of the electronic properties of Tl5Te3, BiTl9Te6and SbTl9Te6compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The band gap of BiTl9Te6and SbTl9Te6compounds are found to be equal to 0.589 eV and 0.538 eV, respectively and are in agreement with the available experimental data. To compare the thermoelectric properties of the different compounds we calculate their thermopower using Mott’s law and show, as expected experimentally, that the substituted tellurides have much better thermoelectric properties compared to the pure compound.

Thermodynamic Stability of Hexagonal and Rhombohedral Bn at Cvd Conditions from Van der Waals Corrected First Principles Calculations

2019 ◽  
Author(s):  
Henrik Pedersen ◽  
Björn Alling ◽  
Hans Högberg ◽  
Annop Ektarawong
Keyword(s):  
Thin Films ◽  
Thermodynamic Stability ◽  
First Principles ◽  
Thermal Equilibrium ◽  
Density Functional ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
First Principles Calculations ◽  
Functional Theory ◽  
The Stability

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.

scholarly journals A first-principle study on the electronic properties of substitutionally Cu (I, II)-doped LiNbO3

2018 ◽  
Vol 08 (01) ◽  
pp. 1820002 ◽  
Author(s):  
Xiaobin Liu ◽  
Wenxiu Que ◽  
Yucheng He ◽  
Huanfu Zhou
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculations ◽  
Density Of State ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Small Band

The electronic properties of Cu-doped lithium niobate (LiNbO3) systems are investigated by first-principles calculations. In this work, we focus on substitutionally Cu[Formula: see text]Li-doped LiNbO3 system with cuprous and cupric doping, which corresponds to the Li[Formula: see text]Cu[Formula: see text]NbO3 and Li[Formula: see text]Cu[Formula: see text]NbO3 [abbreviated as (Li, Cu I)NbO3 and (Li, Cu II)NbO3]. The density functional theory (DFT) calculations show that the electronic property of LiNbO3 is completely different from (Li, Cu I)NbO3 and (Li, Cu II)NbO3. The calculated band structure and density of state (DOS) of (Li, Cu I)NbO3 show a small band gap of 1.34[Formula: see text]eV and the top of valance band (VB) is completely composed of a doping energy level originating from Cu 3d filled orbital. However, the calculated band structure and DOS of (Li, Cu II)NbO3 show a relatively large band gap of 2.22[Formula: see text]eV and the top of VB is mainly composed of Cu 3d unfilled orbital and O 2p orbital.

First-Principles Calculations of the Structure and Magnetic Phases of FeAs2 Compound under Pressure

SPIN ◽  
2018 ◽  
Vol 08 (04) ◽  
pp. 1850016 ◽  
Author(s):  
O. Sebaa ◽  
Y. Zaoui ◽  
K. O. Obodo ◽  
H. Bendaoud ◽  
L. Beldi ◽  
...  
Keyword(s):  
Phase Transition ◽  
First Principles ◽  
Density Functional ◽  
Stable Phase ◽  
Spin Orbit Coupling ◽  
First Principles Calculations ◽  
Generalized Gradient ◽  
Electronic Density ◽  
Functional Theory ◽  
Spin Ordering

Understanding of different magnetic configurations for the FeAs2 iron pnictide compound is carried out using first-principles studies based on spin density functional theory (DFT) within the generalized gradient approximation (GGA), including the spin–orbit coupling (SOC). The calculated stable phase is in the marcasite (Pnnm) with nonmagnetic spin-ordering. We find that the FeAs2 compound in the nonmagnetic (NM) marcasite phase undergoes pressure-induced phase transition to the antiferromagnetic (AFM1) marcasite phase at 12[Formula: see text]GPa, then to the AFM CuAl2 ([Formula: see text]4/mcm) phase at 63[Formula: see text]GPa. The phase transition is also accompanied by semiconducting (marcasite phase) to metallic (CuAl2 phase) transition. The calculated electronic density of states profile shows the hybridization of the Fe-3[Formula: see text] and As-4[Formula: see text] orbitals plays an important role in determining the electronic and magnetic characters of this compound. The associated phase transition results in increased Fe-3d orbitals around the Fermi energy level.

Thermodynamic Stability of Hexagonal and Rhombohedral Bn at Cvd Conditions from Van der Waals Corrected First Principles Calculations

2019 ◽  
Author(s):  
Henrik Pedersen ◽  
Björn Alling ◽  
Hans Högberg ◽  
Annop Ektarawong
Keyword(s):  
Thin Films ◽  
Thermodynamic Stability ◽  
First Principles ◽  
Thermal Equilibrium ◽  
Density Functional ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
First Principles Calculations ◽  
Functional Theory ◽  
The Stability

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.

Elastic Properties and Electronic Structures of L12-TiAl3 and L12-Ti(Al,Pt)3: A Density Functional Theory Investigation

2015 ◽  
Vol 817 ◽  
pp. 816-825
Author(s):  
Bo Huang ◽  
Yong Hua Duan ◽  
Sun Yong ◽  
Ming Jun Peng
Keyword(s):  
Elastic Properties ◽  
First Principles ◽  
Electronic Structures ◽  
Density Functional ◽  
Structural Parameters ◽  
First Principles Calculations ◽  
Elastic Parameters ◽  
Electronic Density ◽  
Functional Theory ◽  
Experimental Values

First-principles calculations have been carried out to investigate the elastic properties and electronic structures of L12-TiAl3and L12-Ti (Al, Pt)3. The optimized structural parameters were largely consistent with the experimental values. The electronic density of states (DOS) and the differences of charge density distribution were given. The independent single-crystal elastic constants and polycrystalline elastic parameters such as bulk modulusB, Young’s modulusE, shear modulusG, Poisson’s ratioνand anisotropy valueAhave been calculated by Voigt-Reuss-Hill averaging scheme. The results indicate that the L12-Ti (Al, Pt)3exhibits larger anisotropy and more ductile than L12-TiAl3.

scholarly journals The Effect of Point Defects on the Electronic Density of States of ScMN2-Type (M = V, Nb, Ta) Phases

2019 ◽  
Vol 4 (3) ◽  
pp. 70 ◽  
Author(s):  
Robert Pilemalm ◽  
Sergei Simak ◽  
Per Eklund
Keyword(s):  
Density Of States ◽  
Point Defects ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculations ◽  
Electronic Density ◽  
Functional Theory ◽  
Occupied State ◽  
Narrow Bandgap ◽  
Bandgap Semiconductors

ScMN2-type (M = V, Nb, Ta) phases are layered materials that have been experimentally reported for M = Ta and Nb. They are narrow-bandgap semiconductors with potentially interesting thermoelectric properties. Point defects such as dopants and vacancies largely affect these properties, motivating the need to investigate these effects. In particular, asymmetric peak features in the density of states (DOS) close to the highest occupied state is expected to increase the Seebeck coefficient. Here, we used first principles calculations to study the effects of one vacancy or one C, O, or F dopant on the DOS of the ScMN2 phases. We used density functional theory to calculate formation energy and the density of states when a point defect is introduced in the structures. In the DOS, asymmetric peak features close to the highest occupied state were found as a result of having a vacancy in all three phases. Furthermore, one C dopant in ScTaN2, ScNbN2, and ScVN2 implies a shift of the highest occupied state into the valence band, while one O or F dopant causes a shift of the highest occupied state into the conduction band.

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