Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalities arising by switching to heteroepitaxy. We found that the nanomembranes evolution strongly depends on the chosen growth parameters as well as mask pattern. The selectivity of III-V material with respect to the SiO2 mask can be obtained when the lifetime of Ga adatoms on SiO2 is reduced, so that the diffusion length of adsorbed Ga is high enough to drive the Ga adatoms towards the etched slits. The best condition for a heteroepitaxial selective area epitaxy is obtained using a growth rate equal to 0.3 ML/s of GaAs, with a As BEP pressure of about 2.5 × 10−6 torr and a temperature of 600 °C.

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Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Nanomaterials ◽

10.3390/nano11010011 ◽

2020 ◽

Vol 11 (1) ◽

pp. 11

Author(s):

Viktor Shamakhov ◽

Dmitriy Nikolaev ◽

Sergey Slipchenko ◽

Evgenii Fomin ◽

Alexander Smirnov ◽

...

Keyword(s):

Growth Rate ◽

Integrated Circuits ◽

Quantum Wells ◽

Chemical Vapour ◽

Growth Conditions ◽

Local Change ◽

Selective Area Epitaxy ◽

Mocvd Growth ◽

Selective Area ◽

Sio2 Mask

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

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Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors

MRS Proceedings ◽

10.1557/proc-279-635 ◽

1992 ◽

Vol 279 ◽

Author(s):

E. Ho ◽

G. A. Coronado ◽

L. A. Kolodziejski

Keyword(s):

Growth Rate ◽

Growth Conditions ◽

Reaction Rate Constant ◽

Chemical Beam Epitaxy ◽

Selective Area Epitaxy ◽

Rate Enhancement ◽

Selective Area ◽

Beam Incident ◽

Rate Retardation

ABSTRACTPhoto-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively desorbing surface species, or by decomposing particular molecular species, or by affecting the reaction rate constant of a chemical process. A potential application of laser-assisted growth rate enhancement or growth rate retardation is in the area of maskless selective area epitaxy. We have investigated the effect of photons on the growth of ZnSe by solid and gaseous source molecular beam epitaxy using various combination of sources. Significant growth rate enhancement (up to 20x), as well as growth rate suppression (as much as 70%), have been observed depending on the sources employed. In all cases, the laser power density remained low (∼200 mW/cm2), and the creation of photo-generated carriers was found to be required. An electron beam incident to the surface has a similar effect and increased the growth rate.

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Mechanisms in embedded selective epitaxy and overgrowth of an integrated laser/modulator quantum well structure using MOMBE and MOVPE

MRS Proceedings ◽

10.1557/proc-648-p6.46 ◽

2000 ◽

Vol 648 ◽

Author(s):

Philipp Kröner ◽

Horst Baumeister ◽

Roland Gessner ◽

Josef Rieger ◽

Michael Schier ◽

...

Keyword(s):

Quantum Well ◽

Growth Parameters ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Selective Area Epitaxy ◽

Organic Vapor ◽

Selective Area ◽

Metal Organic ◽

Modulator Structure ◽

Butt Coupling

AbstractLateral integration of optoelectronic devices comprising strained multiple quantum well (MQW) structures can most successfully be accomplished by selective area epitaxy using metal organic molecular beam epitaxy (MOMBE). We optimized the growth parameters with respect to a planar butt coupling and sharp, flat MQW interfaces in an integrated MQW laser / MQW modulator structure. Defect generation in metal organic vapor phase epitaxy (MOVPE) overgrown cladding layers is analyzed and shown to contain information about the quality of the buried butt coupling. A ridge waveguide structure has successfully been fabricated from an optimized integrated laser / modulator structure.

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Laser Selective Area Epitaxy for the Potential of Optoelectronic Integration

MRS Proceedings ◽

10.1557/proc-158-377 ◽

1989 ◽

Vol 158 ◽

Cited By ~ 1

Author(s):

H. Liu ◽

J.C. Roberts ◽

J. Ramdani ◽

S.M. Bedair

Keyword(s):

Growth Rate ◽

Gaas Layer ◽

Selective Area Epitaxy ◽

Selective Area ◽

Gaas Films ◽

Se Doping ◽

Growth Rate Control ◽

P Type ◽

First Time ◽

Planar Doping

ABSTRACTWe report for the first time the dopant behavior in laser assisted selective epitaxy of device quality GaAs films. DMZn and H2Se were used as p-type and n-type dopants respectively. Uniform doping was achieved by introducing TMGa, AsH3 and dopant gases simultaneously and was accompanied by a decrease in growth rate for both Zn and Se doping. For planar doping, several Se planes were embedded in a GaAs layer by simultaneously introducing AsH3 and H2Se during the LCVD process. A sheet carrier concentration in the 1012 – 1013 cm−2 range was obtained for a single Se plane. Hall data of these films will be discussed. It was found planar doping results in better electrical properties and better growth rate control.

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Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations; applications to selective area epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80241-4 ◽

1995 ◽

Vol 150 ◽

pp. 394-398 ◽

Cited By ~ 9

Author(s):

P. Legay ◽

F. Alexandre ◽

J.L. Benchimol ◽

J.C. Harmand

Keyword(s):

Growth Rate ◽

Chemical Beam Epitaxy ◽

Selective Area Epitaxy ◽

Selective Area

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Selective Area Heteroepitaxy of Nano-AlGaN UV Excitation Sources for Biofluorescence Application

MRS Proceedings ◽

10.1557/proc-0916-dd05-03 ◽

2006 ◽

Vol 916 ◽

Cited By ~ 3

Author(s):

Vibhu Jindal ◽

James Grandusky ◽

Fatemeh Shahedipour-Sandvik ◽

Steven LeBoeuf ◽

Joleyn Balch ◽

...

Keyword(s):

Growth Rate ◽

Growth Parameters ◽

Growth Conditions ◽

X Ray Diffraction ◽

High Quality ◽

X Ray ◽

Selective Area ◽

Mask Material ◽

Uv Excitation ◽

Selection Of

AbstractWe report on the selective area heteroepitaxy and facet evolution of AlGaN nanostructures on GaN/sapphire substrate using various mask materials. We also report on the challenges associated with selection of an appropriate mask material for selective area heteroepitaxy of AlGaN with varying Al composition. The shape and the growth rate of the nanostructures are observed to be greatly affected by the mask material. The evolution of the AlGaN nanostructures and Al incorporation were studied exhaustively as a function of growth parameters; including temperature, pressure, NH3 flow, total alkyl flow and TMAl/(TMAl+TMGa) ratio. The growth rate of nanostructures was reduced drastically when higher Al percentage AlGaN nanostructures were grown. The growth rates were increased for higher Al percentage AlGaN using a surfactant which resulted in a high quality pyramidal structure. As indicated by high resolution x-ray diffraction (XRD) and cathodoluminescence (CL) spectroscopy, composition of Al in the AlGaN nanostructure is significantly different from that of a thin film grown under the same growth conditions.

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Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00533-7 ◽

1997 ◽

Vol 170 (1-4) ◽

pp. 639-644 ◽

Cited By ~ 13

Author(s):

L. Silvestre ◽

A. Ougazzaden ◽

D. Delprat ◽

A. Ramdane ◽

C. Daguet ◽

...

Keyword(s):

Growth Rate ◽

Atmospheric Pressure ◽

Vapour Phase ◽

Selective Area Epitaxy ◽

Strained Layer ◽

Selective Area ◽

Dbr Lasers

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Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy

Applied Physics Letters ◽

10.1063/1.108890 ◽

1993 ◽

Vol 62 (5) ◽

pp. 496-498 ◽

Cited By ~ 11

Author(s):

M. A. Cotta ◽

R. A. Hamm ◽

T. W. Staley ◽

R. D. Yadvish ◽

L. R. Harriott ◽

...

Keyword(s):

Growth Rate ◽

Scanning Force Microscopy ◽

Selective Area Epitaxy ◽

Rate Enhancement ◽

Force Microscopy ◽

Selective Area ◽

Scanning Force ◽

Microscopy Measurement

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Selective area heteroepitaxy of nano-AlGaN ultraviolet excitation sources for biofluorescence application

Journal of Materials Research ◽

10.1557/jmr.2007.0141 ◽

2007 ◽

Vol 22 (4) ◽

pp. 838-844 ◽

Cited By ~ 4

Author(s):

Vibhu Jindal ◽

James R. Grandusky ◽

Neeraj Tripathi ◽

Fatemeh Shahedipour-Sandvik ◽

Steven LeBoeuf ◽

...

Keyword(s):

Growth Rate ◽

Growth Parameters ◽

Growth Conditions ◽

X Ray Diffraction ◽

X Ray ◽

Ultraviolet Excitation ◽

Selective Area ◽

Cathodoluminescence Spectroscopy ◽

Mask Material ◽

Selection Of

We report on the selective area heteroepitaxy and facet evolution of AlGaN nanostructures on GaN/sapphire substrate using various mask materials. We also report on the challenges associated with selection of an appropriate mask material for selective area heteroepitaxy of AlGaN with varying Al composition. The shape and the growth rate of the nanostructures are observed to be greatly affected by the mask material. The evolution of the AlGaN nanostructures and Al incorporation were studied exhaustively as a function of growth parameters including temperature, pressure, NH3 flow, total alkyl flow, and TMAl/(TMAl+TMGa) ratio. The growth rate of nanostructures was reduced drastically when higher Al percentage AlGaN nanostructures were grown. The growth rates were increased for higher Al percentage AlGaN using a surfactant, which resulted in a high-quality pyramidal structure. As indicated by high-resolution x-ray diffraction and cathodoluminescence spectroscopy, the composition of Al in the AlGaN nanostructure is significantly different from that of a thin film grown under the same growth conditions.

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