scholarly journals Chemical Vapor Deposition of IrTe2 Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 575
Author(s):  
Rui Zhou ◽  
Zhaoyang Zhao ◽  
Juanxia Wu ◽  
Liming Xie
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Electrical Measurement ◽  
Charge Ordering ◽  
Temperature Dependent ◽  
Raman Spectroscopic

Two-dimensional (2D) IrTe2 has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2 films using different Ir precursors on different substrates. The Ir(acac)3 precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2 films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8 phase to HT phase at ~250 K in the as-grown IrTe2 films on h-BN. Electrical measurement has shown the HT phase to q1/5 phase at around 220 K.

Chemical Vapor Deposition Synthesis and Raman Spectroscopic Characterization of Large-Area Graphene Sheets

2013 ◽  
Vol 117 (39) ◽  
pp. 9454-9461 ◽  
Author(s):  
Chun-Da Liao ◽  
Yi-Ying Lu ◽  
Srinivasa Reddy Tamalampudi ◽  
Hung-Chieh Cheng ◽  
Yit-Tsong Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Graphene Sheets ◽  
Large Area ◽  
Raman Spectroscopic

scholarly journals Carbon-assisted chemical vapor deposition of hexagonal boron nitride

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025117 ◽  
Author(s):  
Ariel Ismach ◽  
Harry Chou ◽  
Patrick Mende ◽  
Andrei Dolocan ◽  
Rafik Addou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor

Chemical vapor deposition of boron nitride using premixed borontrichloride and ammonia

1991 ◽  
Vol 6 (11) ◽  
pp. 2393-2396 ◽  
Author(s):  
Vladimir Pavlović ◽  
Horst-Rainer Kötter ◽  
Christoph Meixner
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Elevated Temperatures ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Deposit Formation ◽  
Deposition Zone ◽  
Single Tube ◽  
N Compounds

Chemical vapor deposition (CVD) of boron nitride (BN) is most readily performed using BCl3 and NH3, which are brought into the deposition zone through two separate tubes. This causes some problems: inadequate mixing leading to a nonuniform deposit, formation of solid intermediates, etc. To avoid these problems, the process was performed by mixing BCl3 and NH3 at elevated temperatures (120–220 °C) prior to entering the deposition zone. The reaction between them took place by the forming of volatile stoichiometric B–N compounds (trichloroborazine and iminochloroborane), which were then transported through a single tube into a deposition zone. The resulting deposit was found to be hexagonal boron nitride.

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

The Cooling Rate Effect on Graphene Synthesis Using Low Pressure Chemical Vapor Deposition

2021 ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Time ◽  
Carbon Source ◽  
Cooling Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Feeding Time ◽  
Process Variables ◽  
Pressure Chemical

Abstract Low-pressure chemical vapor deposition (LPCVD) is the most efficient method to synthesize large-scale, high-quality graphene for many potential applications such as flexible electronics, solar cells, and separation membranes. The quality of LPCVD is affected by process variables including methane/hydrogen (CH4/H2) ratio, time, pressure, temperature, and cooling rate. The cooling rate has been recognized as one of the most important process variables affecting the amount of carbon source, nucleation, reaction time, and thus the quality of the LPCVD. In this research, we investigate the effect of cooling rate on the quality of graphene synthesize by changing the cooling rate and the gas feeding time. Graphene coverage is measured by Raman mapping. It is found that fast cooling rate leads to decreased carbon source reaction time, which in turn results in higher coverage by monolayer graphene. The temperature-dependent gas feeding time corresponding to different cooling rates can be used to properly supply the carbon source onto the copper surface, also leading to a higher graphene coverage.

Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on Sio2 by Hot-Wire Chemical Vapor Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
Maribeth Swiatek ◽  
Jason K. Holt ◽  
Harry A. Atwater
Keyword(s):  
Activation Energy ◽  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Hot Wire ◽  
Nucleation Kinetics ◽  
Temperature Dependent ◽  
Cluster Density

ABSTRACTWe apply a rate-equation pair binding model of nucleation kinetics [1] to the nucleation of Si islands grown by hot-wire chemical vapor deposition on SiO2 substrates. Previously, we had demonstrated an increase in grain size of polycrystalline Si films with H2 dilution from 40 nm using 100 mTorr of 1% SiH4 in He to 85 nm with the addition of 20 mTorr H2. [2] This increase in grain size is attributed to atomic H etching of Si monomers rather than stable Si clusters during the early stages of nucleation, decreasing the nucleation density. Atomic force microscopy (AFM) measurements show that the nucleation density increases sublinearly with time at low coverage, implying a fast nucleation rate until a critical density is reached, after which grain growth begins. The nucleation density decreases with increasing H2 dilution (H2:SiH4), which is an effect of the etching mechanism, and with increasing temperature, due to enhanced Si monomer diffusivity on SiO2. From temperature-dependent measurements, we estimate the activation energy for surface diffusion of Si monomers on SiO2 to be 0.47 ± 0.09 eV. Simulations of the temperature-dependent supercritical cluster density lead to an estimated activation energy of 0.42 eV ± 0.01 eV and a surface diffusion coefficient prefactor of 0.1 ± 0.03 cm2/s. H2-dilution-dependent simulations of the supercritical cluster density show an approximately linear relationship between the H2 dilution and the etch rate of clusters.

Electron Paramagnetic Resonance Studies of Intrinsic Bonding Defects and Impurities in SiO2 Thin Solid Films

1985 ◽  
Vol 61 ◽  
Author(s):  
Robert N. Schwartz ◽  
Marion D. Clark ◽  
Walee Chamulitrat ◽  
Larry Kevan
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Pressure Chemical ◽  
Defects And Impurities ◽  
Electron Paramagnetic

ABSTRACTElectron paramagnetic resonance (EPR) spectroscopy has been used to identify paramagnetic intrinsic bonding defects and impurities in as-deposited thin solid SiO2 films. Thin films grown by E-beam vacuum deposition, RF sputtering, thermal oxidation of polysilicon, plasma enhanced chemical vapor deposition (PECVD), and low pressure chemical vapor deposition (LPCVD) techniques have been examined. Some of the growth techniques yield films that have paramagnetic centers similar to those found in bulk radiation-damaged vitreous SiO2. A new temperature dependent EPR center was observed in PECVD SiO2 films and has been assigned to trapped NO2. Slow-motional EPR lineshape theory was used to analyze the temperature dependent spectra.

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