Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction
Keyword(s):
X Ray
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AbstractSi/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C
1999 ◽
Vol 38
(Part 2, No. 10A)
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pp. L1099-L1101
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