scholarly journals Frequency Selective Degeneration for 6–18 GHz GaAs pHEMT Broadband Power Amplifier Integrated Circuit

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1588
Author(s):  
Sungjae Oh ◽  
Eunjoo Yoo ◽  
Hansik Oh ◽  
Hyungmo Koo ◽  
Jaekyung Shin ◽  
...  
Keyword(s):  
Frequency Response ◽  
Output Power ◽  
Power Amplifier ◽  
Integrated Circuit ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Matching Networks ◽  
Chip Size ◽  
Parallel Network ◽  
Frequency Selective

In this paper, a frequency selective degeneration technique using a parallel network with a resistor and capacitor is proposed for a 6–18 GHz GaAs pseudomorphic high electron mobility transistor (pHEMT) broadband power amplifier integrated circuit (PAIC). The proposed degeneration network is applied to the source of the transistor to flatten the frequency response of the transistor in conjunction with feedback and resistor biasing circuits. An almost uniform frequency response was achieved at the wide frequency band through optimizing the values of the capacitor and resistor for the degeneration circuit. Single-section matching networks for small chip sizes were adopted for the two-stage amplifier following the flat frequency characteristics of the degenerated transistor. The proposed broadband PAIC for the 6 to 18 GHz band was fabricated using a 0.15 μm GaAs pHEMT process and had a chip size of 1.03 × 0.87 mm2. The PAIC exhibited gain of 15 dB to 17.2 dB, output power of 20.5 dBm to 22.1 dBm, and linear output power of 11.9 dBm to 13.45 dBm, which satisfies the IMD3 of −30 dBc in the 6–18 GHz band. Flatness for the gain and output power was achieved as ±1.1 dB and ±0.8 dB, respectively.

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

Broadband AlGaN/GaN MMIC amplifier

2011 ◽  
Vol 3 (4) ◽  
pp. 399-404
Author(s):  
Ali M. Darwish ◽  
H. Alfred Hung ◽  
Edward Viveiros ◽  
Amr A. Ibrahim
Keyword(s):  
Integrated Circuit ◽  
Low Frequency ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Microwave Integrated Circuit ◽  
Monolithic Microwave Integrated Circuit ◽  
Amplifier Gain ◽  
Chip Size ◽  
In Series ◽  
Amplifier Design

A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology. The amplifier design employs a non-conventional, series-DC/RF-High Electron Mobility Transistor (HEMT) configuration. This configuration provides an alternative design to the conventional traveling-wave amplifier (TWA). It results in a smaller MMIC chip size, and extends amplifier gain to the low-frequency region. The amplifier MMIC utilizes four HEMT devices in series and could be biased at voltages up to 120 V.

scholarly journals GaN low-noise X-band MMIC amplifier.

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
E. Kudabay ◽  
◽  
A. Salikh ◽  
V.A. Moseichuk ◽  
A. Krivtsun ◽  
...  
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
Noise Figure ◽  
Supply Voltage ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Common Source ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
X Band

The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

scholarly journals A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier

2010 ◽  
Vol 2 (3-4) ◽  
pp. 317-324 ◽  
Author(s):  
Paul Saad ◽  
Christian Fager ◽  
Hossein Mashad Nemati ◽  
Haiying Cao ◽  
Herbert Zirath ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Continuous Wave ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Power Added Efficiency ◽  
Average Ratio ◽  
Gan Hemt ◽  
Continuous Wave Signal ◽  
Class F

This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that −42 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, −47 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).

scholarly journals Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer

2017 ◽  
Vol 9 (6) ◽  
pp. 1261-1269 ◽  
Author(s):  
Mhd Tareq Arnous ◽  
Zihui Zhang ◽  
Felix Rautschke ◽  
Georg Boeck
Keyword(s):  
Power Amplifier ◽  
Insertion Loss ◽  
High Power ◽  
Return Loss ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Matching Networks ◽  
Measurement Results ◽  
Saturated Output Power

In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4–4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6–2.6 GHz.

scholarly journals A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 311
Author(s):  
Peisen Cheng ◽  
Quan Wang ◽  
Wei Li ◽  
Yeting Jia ◽  
Zhichao Liu ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Integrated Circuit ◽  
Power Divider ◽  
Total Power ◽  
Design System ◽  
Power Added Efficiency ◽  
Matching Networks ◽  
Compact Size ◽  
Doherty Power Amplifier

This paper proposes a broadband asymmetrical monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) using 0.25-μm gallium-nitride process with a compact chip size of 2.37 × 1.86 mm2 for 5G communication. It adopts an unequal Wilkinson’s power divider with a ratio of 2.5:1, where 71.5% of the total power is transferred to the main amplifier for higher gain. Different input matching networks are used to offset phase difference while completing impedance conversion. This design also applies a novel topology to solve the problem of large impedance transformer ratio (ITR) in conventional DPA, and it optimizes the ITR from 4:1 to 2:1 for wider band. Moreover, most of the components of the DPA including power divider and matching networks use lumped inductors and capacitors instead of long transmission line (TL) for a smaller space area. The whole circuit is designed and simulated using Agilent’s advanced design system (ADS). The simulated small-signal gain of DPA is 8–11 dB and the saturation output power is more than 39.5 dBm with 800 MHz band from 4.5 GHz to 5.3 GHz. At 6-dB output power back-off, the DPA demonstrates 38–41.3% power added efficiency (PAE), whereas 44–54% PAE is achieved at saturation power.

X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power

2018 ◽  
Vol 18 (11) ◽  
pp. 7451-7454
Author(s):  
Quan Wang ◽  
Xiaoliang Wang ◽  
Hongling Xiao ◽  
Cuimei Wang ◽  
Lijuan Jiang ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
X Band

scholarly journals Broadband Millimeter-Wave Power Amplifier Using Modified 2D Distributed Power Combining

Electronics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 899
Author(s):  
Jihoon Kim
Keyword(s):  
Output Power ◽  
Millimeter Wave ◽  
Power Amplifier ◽  
Power Distribution ◽  
Phase Variation ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Power Combining ◽  
Distributed Power ◽  
Power Added Efficiency

A broadband millimeter-wave (mmWave) power amplifier (PA) was implemented using a modified 2D distributed power combining technique. The proposed power combining was based on a single-ended dual-fed distributed combining (SEDFDC) design technique using zero-phase shifting (ZPS) transmission lines. To improve the input/output power distribution of each power cell within a wide frequency range, N/2-way power dividers/combiners were inserted into the distributed combining structure. Modified ZPS lines also simplified the combining structure and curbed phase variation according to the frequency. These modifications enabled power combining cells to increase without degrading the power bandwidth. The proposed PA was fabricated with a commercial 0.15 μm GaAs pseudo high electron-mobility transistor (pHEMT) monolithic microwave-integrated circuit (MMIC) process. It exhibited 20.3 to 24.2 dBm output power (Pout), 12.9 to 21.8 dB power gain, and 5.2% to 12.7% power-added efficiency (PAE) between 26 and 56 GHz.

scholarly journals A 2.4 GHz 20 W 8-channel RF Source Module with Solid-State Power Amplifiers for Plasma Generators

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1378
Author(s):  
Hyosung Nam ◽  
Taejoo Sim ◽  
Junghyun Kim
Keyword(s):  
Solid State ◽  
Output Power ◽  
Power Amplifier ◽  
Power Amplifiers ◽  
State Power ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Power Amplification ◽  
Plasma Generators

This paper presents a novel multi-channel type RF source module with solid-state power amplifiers for plasma generators. The proposed module is consisted of a DC control part, RF source generation part, and power amplification part. A 2-stage power amplifier (PA) is combined with a gallium arsenide hetero bipolar transistor (GaAs HBT) as a drive PA and a gallium nitride high electron mobility transistor (GaN HEMT) as a main PA, respectively. By employing 8 channels, the proposed module secures better area coverage on the wafer during semiconductor processes such as chemical vapor deposition (CVD), etching and so on. Additionally, each channel can be maintained at a constant output power because they have a gain factor tunable by a variable gain amplifier (VGA). For that reason, it is possible to have uniform plasma density on the wafer. The operating sequence is controllable by an external DC control port. Moreover, copper–tungsten (CuW) heat spreaders were applied to prevent RF performance degradation from heat generated by the high power amplifier (HPA), and a water jacket was implemented at the bottom of the power amplification part for liquid cooling. Drawing upon the measurement results, the output power at each channel was over 43 dBm (20 W) and the drain efficiency was more than 50% at 2.4 GHz.

scholarly journals An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 99 ◽  
Author(s):  
Ruitao Chen ◽  
Ruchun Li ◽  
Shouli Zhou ◽  
Shi Chen ◽  
Jianhua Huang ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Integrated Circuit ◽  
High Efficiency ◽  
High Electron Mobility Transistor ◽  
Band Pass Filter ◽  
High Electron ◽  
Large Signal ◽  
Pass Filter ◽  
Power Added Efficiency ◽  
X Band

This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with enhanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.

Sign in / Sign up

Export Citation Format

Share Document