scholarly journals Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2816
Author(s):  
Héctor García ◽  
Jonathan Boo ◽  
Guillermo Vinuesa ◽  
Óscar G. Ossorio ◽  
Benjamín Sahelices ◽  
...  

In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures.

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.


2013 ◽  
Vol 24 (29) ◽  
pp. 295202 ◽  
Author(s):  
Sang-Joon Park ◽  
Jeong-Pyo Lee ◽  
Jong Shik Jang ◽  
Hyun Rhu ◽  
Hyunung Yu ◽  
...  

2014 ◽  
Vol 312 ◽  
pp. 112-116 ◽  
Author(s):  
Peter Jančovič ◽  
Boris Hudec ◽  
Edmund Dobročka ◽  
Ján Dérer ◽  
Ján Fedor ◽  
...  

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce

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