scholarly journals Analytical Approach in the Development of RF MEMS Switches

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 415 ◽  
Author(s):  
Igor Lysenko ◽  
Alexey Tkachenko ◽  
Elena Sherova ◽  
Alexander Nikitin
Keyword(s):  
Integrated Circuits ◽  
Radio Frequency ◽  
High Frequency ◽  
High Performance ◽  
Analytical Approach ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Frequency Control ◽  
High Ratio ◽  
Control Circuits

Currently, the technology of microelectromechanical systems is widely used in the development of high-frequency and ultrahigh-frequency devices. The most important requirements for modern and advanced devices of the ultra-high-frequency range are the reduction of weight and size characteristics, power consumption with an increase in their functionality, operating frequency and level of integration. Radio frequency microelectromechanical switches are developed using the technology of the manufacture of CMOS-integrated circuits. Integrated radio frequency control circuits require low control voltages, the high ratio of losses to the isolation in the open and closed condition, high performance and reliability. This review is devoted to the analytical approach based on the knowledge of materials, basic performance indices and mechanisms of failure, which can be used in the development of radio-frequency microelectromechanical switches.

RF-MEMS Components and Networks for High-Performance Reconfigurable Telecommunication and Wireless Systems

2012 ◽  
Vol 81 ◽  
pp. 65-74 ◽  
Author(s):  
Jacopo Iannacci ◽  
Giuseppe Resta ◽  
Paola Farinelli ◽  
Roberto Sorrentino
Keyword(s):  
High Performance ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Impedance Matching ◽  
Phase Shifters ◽  
Rf Systems ◽  
Mems Technology ◽  
And Performance ◽  
Rf Performance

MEMS (MicroElectroMechanical-Systems) technology applied to the field of Radio Frequency systems (i.e. RF-MEMS) has emerged in the last 10-15 years as a valuable and viable solution to manufacture low-cost and very high-performance passive components, like variable capacitors, inductors and micro-relays, as well as complex networks, like tunable filters, reconfigurable impedance matching networks and phase shifters, and so on. The availability of such components and their integration within RF systems (e.g. radio transceivers, radars, satellites, etc.) enables boosting the characteristics and performance of telecommunication systems, addressing for instance a significant increase of their reconfigurability. The benefits resulting from the employment of RF-MEMS technology are paramount, being some of them the reduction of hardware redundancy and power consumption, along with the operability of the same RF system according to multiple standards. After framing more in detail the whole context of RF MEMS technology, this paper will provide a brief introduction on a typical RF-MEMS technology platform. Subsequently, some relevant examples of lumped RF MEMS passive elements and complex reconfigurable networks will be reported along with their measured RF performance and characteristics.

Towards Next Generation of High-Performance Radio Frequency Passive Components for Beyond-5G, 6G and Super-IoT – Application of Response Surface Method to the Optimization of RF-MEMS Reconfigurable Power Attenuators

2021 ◽  
Author(s):  
Jacopo Iannacci ◽  
Girolamo Tagliapietra ◽  
Alessio Bucciarelli
Keyword(s):  
Radio Frequency ◽  
Design Optimization ◽  
Response Surface ◽  
Response Surface Method ◽  
High Performance ◽  
Rf Mems ◽  
Optimization Approach ◽  
Scattering Parameter ◽  
Passive Components ◽  
Surface Method

Abstract The emerging paradigms of Beyond-5G, 6G and Super-IoT will demand for Radio Frequency (RF) passive components with pronounced performance, and RF-MEMS technology, i.e. Microsystem-based RF passives, is a good candidate to meet such a challenge. As known, RF-MEMS have a complex behavior, that crosses different physical domains (mechanical; electrical; electromagnetic), making the whole design optimization and trimming phases particularly articulated and time consuming. In this work, we propose a novel design optimization approach based on the Response Surface Method (RSM) statistical methodology, focusing the attention on a class of RF-MEMS-based programmable step power attenuators. The proposed method is validated both against physical simulations, performed with Finite Element Method (FEM) commercial software tools, as well as experimental measurements of physical devices. The case study here discussed features 3 DoFs (Degrees of Freedom), comprising both geometrical and material parameters, and aims at optimizing the RF performance of the MEMS attenuator in terms of attenuation (S21 Scattering parameter) and reflection (VSWR – Voltage Standing Wave Ratio). When validate, the proposed RSM-based method allows avoiding physical FEM simulations, thus making the design optimization considerably faster and less complex, both in terms of time and computational load.

scholarly journals The Mechanical Effects Influencing on the Design of RF MEMS Switches

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 207 ◽  
Author(s):  
Igor Lysenko ◽  
Alexey Tkachenko ◽  
Olga Ezhova ◽  
Boris Konoplev ◽  
Eugeny Ryndin ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Negative Impact ◽  
Short Circuit ◽  
Open Circuit ◽  
Operating Conditions ◽  
Strong Impact ◽  
Irreversible Damage ◽  
Mechanical Effects

Radio-frequency switches manufactured by microelectromechanical systems technology are now widely used in aerospace systems and other mobile installations for various purposes. In these operating conditions, these devices are often exposed to intense mechanical environmental influences that have a strong impact on their operation. These negative effects can lead to unwanted short-circuit or open-circuit in the radio-frequency transmission line or to irreversible damage to structural elements. Such a violation in the operation of radio-frequency microelectromechanical switches leads to errors and improper functioning of the electronic equipment in which they are integrated. Thus, this review is devoted to the analysis of the origin of these negative intense mechanical effects of the environment, their classification, and analysis, as well as a review of methods to reduce or prevent their negative impact on the design of radio-frequency microelectromechanical switches.

High Performance GaInP/GaAs HBT Radio Frequency Integrated Circuits at 5 GHz

2006 ◽  
Author(s):  
Chinchun Meng ◽  
Tzung-Han Wu ◽  
Mingchi Lin ◽  
Ching Hung Chen ◽  
J.-C. Jhong ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Radio Frequency ◽  
High Performance ◽  
Radio Frequency Integrated Circuits ◽  
5 Ghz

scholarly journals High-performance inline RF MEMS switch for application in 5G mobile networks

2021 ◽  
Vol 2086 (1) ◽  
pp. 012068
Author(s):  
A V Tkachenko ◽  
I E Lysenko ◽  
A V Kovalev ◽  
D V Vertyanov
Keyword(s):  
Mobile Networks ◽  
High Performance ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Coplanar Waveguide ◽  
Satellite Communications ◽  
Elastic Suspension ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
5G Mobile Networks

Abstract This article presents the results of the design and analysis of a radio-frequency switch made using microelectromechanical systems technology. The device is the capacitive switch with a hybrid type of contact, in which the movable electrode of the structure – the metal membrane is part of the microwave signal line of the coplanar waveguide. The switch design is characterized by a high capacitance ratio and low contact resistance. The zig-zag elastic suspension is used to reduce the value of the pull-down voltage – 2 V and the switching time ∼ 7 us. The central resonant frequency of the switch is 3.8 GHz. In this case, in the open state, the value of the insertion loss is not more than -0.2 dB and the isolation value in the close state is not less than -55 dB. The effective frequency range is the S-band, as well as the C-, X- and Ku-band, in which the isolation value is at least -30 dB. The presented inline RF MEMS switch is suitable for use in various types of ground and satellite communications, in particular for devices and systems of 5G mobile networks.

scholarly journals Novel design and analysis of RF MEMS shunt capacitive switch for radar and satellite communications

2019 ◽  
Vol 15 (2) ◽  
pp. 971
Author(s):  
Maham Kamil Naji ◽  
Alaa Desher Farhood ◽  
Adnan Hussein Ali
Keyword(s):  
Radio Frequency ◽  
High Frequency ◽  
Return Loss ◽  
Rf Mems ◽  
Dielectric Material ◽  
Satellite Communications ◽  
Superior Performance ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

<span>In this paper, a new type of Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) shunt capacitive switch is designed and studied. RF MEMS switch has a number of advantages in a modern telecommunication system such as low power consumption, easy to fabricate and power handling capacity at radio frequency. At high frequency applications, this switch shows very superior performance due to which it now became one of the key elements for RF application. In this proposed design, an innovative type of MEMS switch is designed. The MEMS switch structure consists of substrate, co-planar waveguide (CPW), dielectric material and a metallic bridge. The proposed MEMS switch has a dimension of 508 µm × 620 µm with a height of 500 µm. The substrate used is GaAs material. The relative permittivity of the substrate is 12.9. This proposed MEMS switch is designed and simulated in both UP (ON) state and DOWN (OFF) state. The proposed RF-MEMS switch is designed and simulated using Ansoft High frequency structure simulator (HFSS) electromagnetic simulator. The simulated result shows better performance parameters such as return loss ( &lt;-10 dB)  and insertion loss ( &gt; -0.5 dB) in UP state, whereas return loss ( &gt; -0.5 dB) and isolation (&lt;-10 dB) in DOWN state. This switch has good isolation characteristics of – 43 dB at 27 GHz frequency.</span>

scholarly journals Evaluation of Meshed Reference Planes for High Performance Applications

2000 ◽  
Vol 22 (3) ◽  
pp. 175-187 ◽  
Author(s):  
N. D. Codreanu ◽  
P. Svasta ◽  
V. Golumbeanu ◽  
L. Gál
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Network Analyzer ◽  
High Frequencies ◽  
High Speeds ◽  
University Of Budapest ◽  
Very High Frequencies ◽  
Very High

The actual generations of integrated circuits are characterized, inter alia, by very high frequencies or very high speeds. The dramatic evolution ofthe semiconductor's technology establishes a greater “pressure” to the design and the manufacturing of the passive interconnection structure from PCB/MCM electronic modules. In these conditions the reference planes (power and ground planes) have a more and more important contribution. The paper intents to present the effect of different configuration reference planes on the characteristics of the high speed/high frequency interconnection lines. The first part deals with modeling and simulation of usual practical interconnection geometries. A computer modeling of meshed structures was realized and Spice models for a good compatibility with circuit simulators were obtained.S-,Y-,Z- parameters and radiation patterns were calculated, too. The second part contains measurements made by a vector network analyzer as regards to different practical configurations manufactured at Technical University of Budapest.

scholarly journals High performance photonic microwave filters based on a 50GHz FSR optical soliton crystal Kerr micro-comb

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Radio Frequency ◽  
Spectral Range ◽  
High Frequency ◽  
High Performance ◽  
Free Spectral Range ◽  
Microwave Filters ◽  
Rf Filters ◽  
Transversal Filter ◽  
Communications Systems ◽  
Integrated Optical

Abstract We demonstrate a photonic radio frequency (RF) transversal filter based on an integrated optical micro-comb source featuring a record low free spectral range of 49 GHz yielding 80 micro-comb lines across the C-band. This record-high number of taps, or wavelengths for the transversal filter results in significantly increased performance including a QRF factor more than four times higher than previous results. Further, by employing both positive and negative taps, an improved out-of-band rejection of up to 48.9 dB is demonstrated using Gaussian apodization, together with a tunable centre frequency covering the RF spectra range, with a widely tunable 3-dB bandwidth and versatile dynamically adjustable filter shapes. Our experimental results match well with theory, showing that our transversal filter is a competitive solution to implement advanced adaptive RF filters with broad operational bandwidths, high frequency selectivity, high reconfigurability, and potentially reduced cost and footprint. This approach is promising for applications in modern radar and communications systems.

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