scholarly journals Low Phase Noise and Wide-Range Class-C VCO Using Auto-Adaptive Bias Technique

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1290
Author(s):  
Jeong-Yun Lee ◽  
Gwang Sub Kim ◽  
Goo-Han Ko ◽  
Kwang-Il Oh ◽  
Jae Gyeong Park ◽  
...  
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Wide Frequency Range ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Frequency Range ◽  
Wide Range ◽  
Class C ◽  
Low Phase Noise

This paper proposes a new structure of 24-GHz class-C voltage-controlled oscillator (VCO) using an auto-adaptive bias technique. The VCO in this paper uses a digitally controlled circuit to eliminate the possibility of start-up failure that a class-C structure can have and has low phase noise and a wide frequency range. To expand the frequency tuning range, a 3-bit cap-bank is used and a triple-coupled transformer is used as the core inductor. The proposed class-C VCO implements a 65-nm RF CMOS process. It has a phase noise performance of −105 dBc/Hz or less at 1-MHz offset frequency and the output frequency range is from 22.8 GHz to 27.3 GHz, which consumes 8.3–10.6 mW of power. The figure-of-merit with tuning range (FoMT) of this design reached 191.1 dBc/Hz.

scholarly journals A Design of Wide-Range and Low Phase Noise Linear Transconductance VCO with 193.76 dBc/Hz FoMT for mm-Wave 5G Transceivers

Electronics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 935 ◽  
Author(s):  
Arash Hejazi ◽  
YoungGun Pu ◽  
Kang-Yoon Lee
Keyword(s):  
Phase Noise ◽  
Carrier Frequency ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Cmos Process ◽  
Switched Capacitor ◽  
Voltage Controlled Oscillator ◽  
Wide Range ◽  
Layout Area ◽  
Low Phase Noise

This paper presents a wide-range and low phase noise mm-Wave Voltage Controlled Oscillator (VCO) based on the transconductance linearization technique. The proposed technique eliminates the deep triode region of the active part of the VCO, and lowers the noise introduced by the gm-cell. The switch sizes inside the switched capacitor bank of the VCO are optimized to minimize the resistance of the switches while keeping the wide tuning range. A new layout technique shortens the routing of the VCO outputs, and lowers the parasitic inductance and resistance of the VCO routing. The presented method prevents the reduction of the quality factor of the tank due to the long routing. The proposed VCO achieves a discrete frequency tuning range, of 14 GHz to 18 GHz, through a linear coarse and middle switched capacitor array, and offers superior phase noise performance compared to recent state-of-the-art VCO architectures. The design is implemented in a 45 nm CMOS process and occupies a layout area (including output buffers) of 0.14 mm2. The power consumption of the VCO core is 24 mW from the power supply of 0.8 V. The post-layout simulation result shows the VCO achieves the phase noise performances of −87.2 dBc/Hz and −113 dBc/Hz, at 100 kHz and 1 MHz offset frequencies from the carrier frequency of 14 GHz, respectively. In an 18 GHz carrier frequency, the results are −87.4 dBc/Hz and −110 dBc/Hz, accordingly.

scholarly journals A Very Low-phase-noise CMOS Ring VCO Intended for Sensor Interfaces

2021 ◽  
Author(s):  
Mahin Esmaeilzadeh ◽  
Yves Audet ◽  
Mohamed Ali ◽  
Mohamad Sawan
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Silicon Area ◽  
Wide Range ◽  
Extended Frequency ◽  
Sensor Interfaces ◽  
Low Phase Noise ◽  
Analytical Expressions

<p>We describe in the paper a ring voltage-controlled oscillator (VCO) indicating an improved phase noise over a wide range of frequency offsets and an extended frequency/voltage tuning range. The phase noise is improved by leveraging a better linearity approach, while reducing the VCO gain and maintaining wide tuning range. The proposed VCO is a block of a time-domain comparator embedded in a monitoring and readout circuit of an industrial sensor interface. An analytical model is extracted resulting in closed-form expressions for both input-referred noise and phase noise of the VCO. Employing the analytical expressions, the contributed noise and phase noise limitations are fully addressed, and all the effective factors are investigated. The prototype of the proposed VCO was implemented and fabricated in a 0.35 µm CMOS process. The integrated VCO consumes 0.903 mW from a 3.3 V supply, when running at its maximum frequency of 9.37 MHz. The measured phase noise of the proposed VCO is -147.57 dBc/Hz at 1 MHz offset from the 9.37 MHz oscillation frequency, and the occupied silicon area of circuit is 0.005 mm<sup>2</sup>.</p>

scholarly journals A Very Low-phase-noise CMOS Ring VCO Intended for Sensor Interfaces

2021 ◽  
Author(s):  
Mahin Esmaeilzadeh ◽  
Yves Audet ◽  
Mohamed Ali ◽  
Mohamad Sawan
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Silicon Area ◽  
Wide Range ◽  
Extended Frequency ◽  
Sensor Interfaces ◽  
Low Phase Noise ◽  
Analytical Expressions

<p>We describe in the paper a ring voltage-controlled oscillator (VCO) indicating an improved phase noise over a wide range of frequency offsets and an extended frequency/voltage tuning range. The phase noise is improved by leveraging a better linearity approach, while reducing the VCO gain and maintaining wide tuning range. The proposed VCO is a block of a time-domain comparator embedded in a monitoring and readout circuit of an industrial sensor interface. An analytical model is extracted resulting in closed-form expressions for both input-referred noise and phase noise of the VCO. Employing the analytical expressions, the contributed noise and phase noise limitations are fully addressed, and all the effective factors are investigated. The prototype of the proposed VCO was implemented and fabricated in a 0.35 µm CMOS process. The integrated VCO consumes 0.903 mW from a 3.3 V supply, when running at its maximum frequency of 9.37 MHz. The measured phase noise of the proposed VCO is -147.57 dBc/Hz at 1 MHz offset from the 9.37 MHz oscillation frequency, and the occupied silicon area of circuit is 0.005 mm<sup>2</sup>.</p>

scholarly journals On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2928
Author(s):  
Hsuan-Ling Kao
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
High Electron Mobility Transistors ◽  
Voltage Controlled Oscillator ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
On Chip ◽  
Low Phase Noise

This study presents a voltage-controlled oscillator (VCO) in a cross-coupled pair configuration using a multi-tapped switched inductor with two switch-loaded transformers in 0.5 µm GaN technology. Two switch-loaded transformers are placed at the inner and outer portions of the multi-tapped inductor. All the switches are turned off to obtain the lowest sub-band. The outer transformer with three pairs of switches is turned on alternately to provide three sub-band modes. A pair of switches at the inner transformer provide a high-frequency band. Two switch-loaded transformers are turned on to provide the highest sub-band. Six modes are selected to provide a wide tuning range. The frequency tuning range (FTR) of the VCO is 27.8% from 3.81 GHz to 8.04 GHz with a varactor voltage from 13 V to 22 V. At a 1 MHz frequency offset from the carrier frequency of 4.27 GHz, the peak phase noise is −119.17 dBc/Hz. At a power supply of 12 V, the output power of the carrier at 4.27 GHz is 20.9 dBm. The figure of merit is −186.93 dB because the VCO exhibits a high output power, low phase noise, and wide FTR. To the best of the author’s knowledge, the FTR in VCOs made of GaN-based high electron mobility transistors is the widest reported thus far.

A 400 μW Near-Threshold Feedback Class-C VCO with Auto Amplitude Control

2018 ◽  
Vol 27 (05) ◽  
pp. 1850072
Author(s):  
Chenggang Yan ◽  
Chen Hu
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Feedback Loop ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Amplitude Control ◽  
Ultra Low Power ◽  
Class C ◽  
Low Phase Noise ◽  
Near Threshold

A 400[Formula: see text][Formula: see text]W near-threshold supply class-C voltage controlled oscillator (VCO) with amplitude feedback loop and auto amplitude control (AAC) is proposed in this paper. The amplitude feedback loop and AAC ensure the robust startup of the proposed VCO and automatically adapts it to the class-C mode in steady state. Consequently, ultra-low power can be achieved in AAC mode and low phase noise, high swing can be achieved in AAC off mode. The proposed VCO with AAC gets ultra-low power consumption by limiting the oscillating amplitude and driving the proposed VCO into the deep Class-C mode. Additionally, the peak value detector is employed in this work to boost the controlling voltage of capacitors bank. Thus, a low on resistance of switch transistors is obtained, which increases the Q value of capacitors bank. The simulated phase noise is [Formula: see text]124.5[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset with the 1.16[Formula: see text]GHz oscillation frequency. In this case, the figure-of-merit including tuning range (FOMT) of proposed VCO is [Formula: see text]195[Formula: see text]dBc/Hz. The proposed VCO is fabricated in SMIC 40[Formula: see text]nm CMOS process and consumes 0.62[Formula: see text]mA from 0.65[Formula: see text]V supply. The measured phase noise is [Formula: see text]109[Formula: see text]dBc/Hz and FOMT is [Formula: see text]179[Formula: see text]dBc/Hz.

A LOW POWER PUSH–PUSH VCO USING MULTI-COUPLED LC TANKS

2013 ◽  
Vol 22 (10) ◽  
pp. 1340035
Author(s):  
MAHALINGAM NAGARAJAN ◽  
KAIXUE MA ◽  
KIAT SENG YEO ◽  
WEI MENG LIM
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Voltage Controlled Oscillator ◽  
Fully Integrated ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Large Tuning Range ◽  
Low Phase Noise ◽  
Lc Tanks

A fully integrated push–push voltage controlled oscillator (VCO) working in K-band with a large tuning range and a low phase noise fabricated in a 0.18 μm SiGe BiCMOS technology is presented. Multi-coupled LC tanks are used to improve the tuning range, power consumption and phase noise. Digital tuning varactors are used to maintain a low VCO tuning sensitivity (K VCO ) and maximum frequency overlap. The VCO achieves a frequency tuning range (FTR) of 17% at 12 GHz, a phase noise of -106.62 dBc/Hz at 1 MHz offset and consumes 7 mW from 1.8 V supply.

Power Efficient Implementation of Low Noise CMOS LC VCO using 32nm Technology for RF Applications

2018 ◽  
Vol 6 (8) ◽  
pp. 53
Author(s):  
Shitesh Tiwari ◽  
Sumant Katiyal ◽  
Parag Parandkar
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Tuning Range ◽  
Low Voltage ◽  
Performance Comparison ◽  
Low Noise ◽  
Center Frequency ◽  
Voltage Controlled Oscillator ◽  
Low Phase Noise ◽  
Lc Vco

Voltage Controlled Oscillator (VCO) is an integral component of most of the receivers such as GSM, GPS etc. As name indicates, oscillation is controlled by varying the voltage at the capacitor of LC tank. By varying the voltage, VCO can generate variable frequency of oscillation. Different VCO Parameters are contrasted on the basis of phase noise, tuning range, power consumption and FOM. Out of these phase noise is dependent on quality factor, power consumption, oscillation frequency and current. So, design of LC VCO at low power, low phase noise can be obtained with low bias current at low voltage.  Nanosize transistors are also contributes towards low phase noise. This paper demonstrates the design of low phase noise LC VCO with 4.89 GHz tuning range from 7.33-11.22 GHz with center frequency at 7 GHz. The design uses 32nm technology with tuning voltage of 0-1.2 V. A very effective Phase noise of -114 dBc / Hz is obtained with FOM of -181 dBc/Hz. The proposed work has been compared with five peer LC VCO designs working at higher feature sizes and outcome of this performance comparison dictates that the proposed work working at better 32 nm technology outperformed amongst others in terms of achieving low Tuning voltage and moderate FoM, overshadowed by a little expense of power dissipation. 

scholarly journals An Ultra-Low-Power K-Band 22.2 GHz-to-26.9 GHz Current-Reuse VCO Using Dynamic Back-Gate-Biasing Technique

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Back Gate ◽  
Ultra Low Power ◽  
Current Reuse ◽  
K Band

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.

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