A Very Low-phase-noise CMOS Ring VCO Intended for Sensor Interfaces

Silicon Area ◽

Wide Range ◽

Extended Frequency ◽

Sensor Interfaces ◽

Low Phase Noise ◽

Analytical Expressions

<p>We describe in the paper a ring voltage-controlled oscillator (VCO) indicating an improved phase noise over a wide range of frequency offsets and an extended frequency/voltage tuning range. The phase noise is improved by leveraging a better linearity approach, while reducing the VCO gain and maintaining wide tuning range. The proposed VCO is a block of a time-domain comparator embedded in a monitoring and readout circuit of an industrial sensor interface. An analytical model is extracted resulting in closed-form expressions for both input-referred noise and phase noise of the VCO. Employing the analytical expressions, the contributed noise and phase noise limitations are fully addressed, and all the effective factors are investigated. The prototype of the proposed VCO was implemented and fabricated in a 0.35 µm CMOS process. The integrated VCO consumes 0.903 mW from a 3.3 V supply, when running at its maximum frequency of 9.37 MHz. The measured phase noise of the proposed VCO is -147.57 dBc/Hz at 1 MHz offset from the 9.37 MHz oscillation frequency, and the occupied silicon area of circuit is 0.005 mm<sup>2</sup>.</p>

A Design of Wide-Range and Low Phase Noise Linear Transconductance VCO with 193.76 dBc/Hz FoMT for mm-Wave 5G Transceivers

Electronics ◽

10.3390/electronics9060935 ◽

2020 ◽

Vol 9 (6) ◽

pp. 935 ◽

Cited By ~ 1

Author(s):

Arash Hejazi ◽

YoungGun Pu ◽

Kang-Yoon Lee

Keyword(s):

Phase Noise ◽

Carrier Frequency ◽

Tuning Range ◽

Frequency Tuning ◽

Cmos Process ◽

Switched Capacitor ◽

Wide Range ◽

Layout Area ◽

This paper presents a wide-range and low phase noise mm-Wave Voltage Controlled Oscillator (VCO) based on the transconductance linearization technique. The proposed technique eliminates the deep triode region of the active part of the VCO, and lowers the noise introduced by the gm-cell. The switch sizes inside the switched capacitor bank of the VCO are optimized to minimize the resistance of the switches while keeping the wide tuning range. A new layout technique shortens the routing of the VCO outputs, and lowers the parasitic inductance and resistance of the VCO routing. The presented method prevents the reduction of the quality factor of the tank due to the long routing. The proposed VCO achieves a discrete frequency tuning range, of 14 GHz to 18 GHz, through a linear coarse and middle switched capacitor array, and offers superior phase noise performance compared to recent state-of-the-art VCO architectures. The design is implemented in a 45 nm CMOS process and occupies a layout area (including output buffers) of 0.14 mm2. The power consumption of the VCO core is 24 mW from the power supply of 0.8 V. The post-layout simulation result shows the VCO achieves the phase noise performances of −87.2 dBc/Hz and −113 dBc/Hz, at 100 kHz and 1 MHz offset frequencies from the carrier frequency of 14 GHz, respectively. In an 18 GHz carrier frequency, the results are −87.4 dBc/Hz and −110 dBc/Hz, accordingly.

Low Phase Noise and Wide-Range Class-C VCO Using Auto-Adaptive Bias Technique

Electronics ◽

10.3390/electronics9081290 ◽

2020 ◽

Vol 9 (8) ◽

pp. 1290

Author(s):

Jeong-Yun Lee ◽

Gwang Sub Kim ◽

Goo-Han Ko ◽

Kwang-Il Oh ◽

Jae Gyeong Park ◽

...

Keyword(s):

Phase Noise ◽

Tuning Range ◽

Frequency Tuning ◽

Wide Frequency Range ◽

Cmos Process ◽

Frequency Range ◽

Wide Range ◽

Class C ◽

This paper proposes a new structure of 24-GHz class-C voltage-controlled oscillator (VCO) using an auto-adaptive bias technique. The VCO in this paper uses a digitally controlled circuit to eliminate the possibility of start-up failure that a class-C structure can have and has low phase noise and a wide frequency range. To expand the frequency tuning range, a 3-bit cap-bank is used and a triple-coupled transformer is used as the core inductor. The proposed class-C VCO implements a 65-nm RF CMOS process. It has a phase noise performance of −105 dBc/Hz or less at 1-MHz offset frequency and the output frequency range is from 22.8 GHz to 27.3 GHz, which consumes 8.3–10.6 mW of power. The figure-of-merit with tuning range (FoMT) of this design reached 191.1 dBc/Hz.

Power Efficient Implementation of Low Noise CMOS LC VCO using 32nm Technology for RF Applications

International Journal of Emerging Research in Management and Technology ◽

10.23956/ijermt.v6i8.118 ◽

2018 ◽

Vol 6 (8) ◽

pp. 53

Author(s):

Shitesh Tiwari ◽

Sumant Katiyal ◽

Parag Parandkar

Keyword(s):

Power Consumption ◽

Phase Noise ◽

Tuning Range ◽

Low Voltage ◽

Performance Comparison ◽

Low Noise ◽

Center Frequency ◽

Low Phase Noise ◽

Lc Vco

Voltage Controlled Oscillator (VCO) is an integral component of most of the receivers such as GSM, GPS etc. As name indicates, oscillation is controlled by varying the voltage at the capacitor of LC tank. By varying the voltage, VCO can generate variable frequency of oscillation. Different VCO Parameters are contrasted on the basis of phase noise, tuning range, power consumption and FOM. Out of these phase noise is dependent on quality factor, power consumption, oscillation frequency and current. So, design of LC VCO at low power, low phase noise can be obtained with low bias current at low voltage. Nanosize transistors are also contributes towards low phase noise. This paper demonstrates the design of low phase noise LC VCO with 4.89 GHz tuning range from 7.33-11.22 GHz with center frequency at 7 GHz. The design uses 32nm technology with tuning voltage of 0-1.2 V. A very effective Phase noise of -114 dBc / Hz is obtained with FOM of -181 dBc/Hz. The proposed work has been compared with five peer LC VCO designs working at higher feature sizes and outcome of this performance comparison dictates that the proposed work working at better 32 nm technology outperformed amongst others in terms of achieving low Tuning voltage and moderate FoM, overshadowed by a little expense of power dissipation.

Design of a high tuning range and low phase noise transformer-based LC voltage-controlled oscillator

Microwave and Optical Technology Letters ◽

10.1002/mop.25908 ◽

2011 ◽

Vol 53 (5) ◽

pp. 1165-1169 ◽

Cited By ~ 2

Author(s):

Jhin-Fang Huang ◽

Che-Chi Mao

Keyword(s):

Phase Noise ◽

Tuning Range ◽

Hybrid voltage-controlled oscillator with low phase noise and large frequency tuning range

Analog Integrated Circuits and Signal Processing ◽

10.1007/s10470-014-0462-2 ◽

2015 ◽

Vol 82 (2) ◽

pp. 471-478 ◽

Cited By ~ 3

Author(s):

Fei Yuan ◽

Dominic DiClemente

Keyword(s):

Phase Noise ◽

Tuning Range ◽

Frequency Tuning ◽

Low Phase Noise ◽

Large Frequency

A low phase noise and large tuning range 2.4GHz LC voltage-controlled oscillator

2010 IEEE Asia Pacific Conference on Circuits and Systems ◽

10.1109/apccas.2010.5774910 ◽

2010 ◽

Cited By ~ 4

Author(s):

M. H. Siti Maisurah ◽

F. Nazif Emran ◽

Fadhil Idham M. Norman ◽

A. I. Abdul Rahim ◽

Y. Mohamed Razman

Keyword(s):

Phase Noise ◽

Tuning Range ◽

Large Tuning Range ◽

A wide tuning range and low phase noise 20GHz 0.18μm CMOS voltage controlled oscillator

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2010.12.003 ◽

2011 ◽

Vol 65 (9) ◽

pp. 763-766 ◽

Cited By ~ 3

Author(s):

Hsuan-Ling Kao ◽

Li-Chun Chang ◽

Jeffrey S. Fu

Keyword(s):

Phase Noise ◽

Tuning Range ◽

Wide Tuning Range ◽

On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology

Electronics ◽

10.3390/electronics10232928 ◽

2021 ◽

Vol 10 (23) ◽

pp. 2928

Author(s):

Hsuan-Ling Kao

Keyword(s):

Phase Noise ◽

Output Power ◽

Tuning Range ◽

Frequency Tuning ◽

High Electron Mobility Transistors ◽

High Electron ◽

Electron Mobility Transistors ◽

On Chip ◽

This study presents a voltage-controlled oscillator (VCO) in a cross-coupled pair configuration using a multi-tapped switched inductor with two switch-loaded transformers in 0.5 µm GaN technology. Two switch-loaded transformers are placed at the inner and outer portions of the multi-tapped inductor. All the switches are turned off to obtain the lowest sub-band. The outer transformer with three pairs of switches is turned on alternately to provide three sub-band modes. A pair of switches at the inner transformer provide a high-frequency band. Two switch-loaded transformers are turned on to provide the highest sub-band. Six modes are selected to provide a wide tuning range. The frequency tuning range (FTR) of the VCO is 27.8% from 3.81 GHz to 8.04 GHz with a varactor voltage from 13 V to 22 V. At a 1 MHz frequency offset from the carrier frequency of 4.27 GHz, the peak phase noise is −119.17 dBc/Hz. At a power supply of 12 V, the output power of the carrier at 4.27 GHz is 20.9 dBm. The figure of merit is −186.93 dB because the VCO exhibits a high output power, low phase noise, and wide FTR. To the best of the author’s knowledge, the FTR in VCOs made of GaN-based high electron mobility transistors is the widest reported thus far.

A LOW PHASE NOISE, POWER EFFICIENT VOLTAGE CONTROLLED OSCILLATOR USING 0.18-μM CMOS TECHNOLOGY

International Journal of Electronics and Electical Engineering ◽

10.47893/ijeee.2014.1109 ◽

2014 ◽

pp. 256-259

Author(s):

AJIT SAMASGIKAR

Keyword(s):

Power Consumption ◽

Phase Noise ◽

Tuning Range ◽

Supply Voltage ◽

Cmos Technology ◽

Noise Power ◽

Power Efficient ◽

Sustained Oscillations ◽

A low phase noise, power efficient VCO using UMC 0.18μm CMOS technology has been proposed in this paper. The proposed VCO has a tuning range of 9.71GHz to 9.9GHz, with a phase noise of -79.88 dBc/Hz @ 600kHz offset. The Vtune ranging between 1V - 1.5V generates sustained oscillations. The maximum power consumption of the VCO is 11.9mW using a supply voltage of 1.8V with ±10% variation.