scholarly journals Monolithic Integrated High Frequency GaN DC-DC Buck Converters with High Power Density Controlled by Current Mode Logic Level Signal

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1540
Author(s):  
Longkun Lai ◽  
Ronghua Zhang ◽  
Kui Cheng ◽  
Zhiying Xia ◽  
Chun Wei ◽  
...  
Keyword(s):  
Power Density ◽  
Current Mode ◽  
Buck Converter ◽  
Switching Frequency ◽  
High Power Density ◽  
Current Mode Logic ◽  
Power Stage ◽  
Amplifier Stage ◽  
Gate Driver ◽  
Logic Level

Integration is a key way to improve the switching frequency and power density for a DC-DC converter. A monolithic integrated GaN based DC-DC buck converter is realized by using a gate driver and a half-bridge power stage. The gate driver is composed of three stages (amplitude amplifier stage, level shifting stage and resistive-load amplifier stage) to amplify and modulate the driver control signal, i.e., CML (current mode logic) level of which the swing is from 1.1 to 1.8 V meaning that there is no need for an additional buffer or preamplifier for the control signal. The gate driver can provide sufficient driving capability for the power stage and improve the power density efficiently. The proposed GaN based DC-DC buck converter is implemented in the 0.25 μm depletion mode GaN-on-SiC process with a chip area of 1.7 mm × 1.3 mm, which is capable of operating at high switching frequency up to 200 MHz and possesses high power density up to 1 W/mm2 at 15 V output voltage. To the authors’ knowledge, this is the highest power density for GaN based DC-DC converter at the hundreds of megahertz range.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

Full SiC DCDC-Converter with a Power Density of more than 100kW/dm3

2015 ◽  
Vol 821-823 ◽  
pp. 884-888 ◽  
Author(s):  
Otto Kreutzer ◽  
Martin März ◽  
Hideki Nakata
Keyword(s):  
Power Density ◽  
High Power ◽  
Hybrid Vehicles ◽  
Switching Frequency ◽  
High Power Density ◽  
Passive Components ◽  
Custom Made ◽  
Power Stage ◽  
Parasitic Effects ◽  
Made In

This Paper describes a non-isolated bidirectional full SiC 800V 200kW DCDC-converter power stage for electric and hybrid vehicles that reaches a power density of more than 100 kW/dm3 at a switching frequency of 200 kHz. The high power density is achieved by the use of SiC-MOSFETs sintered on custom made Si3N4DCB-substrates controlled by custom made extremely flat drivers and a resulting very low inductive DC-link connection. All passive components like inductors and capacitor boards are custom made in order to keep all parasitic effects as low as possible. The power is subdivided on six interleaved phases to reduce the required capacitor ripple current capability.

Analysis of Current Mode in High Power Density Boost Converters with Magnetic Coupling

2016 ◽  
Vol 136 (10) ◽  
pp. 778-783
Author(s):  
Yasuo Sasaki ◽  
Yusuke Sugihara ◽  
Kimihiro Nanamori ◽  
Masayoshi Yamamoto
Keyword(s):  
Power Density ◽  
High Power ◽  
Magnetic Coupling ◽  
Current Mode ◽  
High Power Density ◽  
Boost Converters

scholarly journals Modeling and Analysis of a PCM-Controlled Boost Converter Designed to Operate in DCM

Energies ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 4 ◽  
Author(s):  
Teuvo Suntio
Keyword(s):  
Dynamic Models ◽  
Control Method ◽  
Operation Mode ◽  
Current Mode ◽  
Boost Converter ◽  
Open Loop ◽  
Buck Converter ◽  
Small Signal ◽  
Modeling And Analysis ◽  
Power Stage

Peak current-mode (PCM) control has been a very popular control method in power electronic converters. The small-signal modeling of the dynamics associated with PCM control has turned out to be extremely challenging. Most of the modeling attempts have been dedicated to the converters operating in continuous conduction mode (CCM) and just a few to the converters operating in discontinuous operation mode (DCM). The DCM modeling method published in 2001 was proven recently to be very accurate when applied to a buck converter. This paper provides the small-signal models for a boost converter and analyses for the first time its real dynamic behavior in DCM. The objectives of this paper are as follows: (i) to provide the full-order dynamic models for the DCM-operated PCM-controlled boost converter; (ii) to analyze the accuracy of the full and reduced-order dynamic models; and iii) to verify the validity of the high-frequency extension applied in the DCM-operated PCM-controlled buck converter in the case of the boost converter. It is also shown that the DCM-operated boost converter can operate only in even harmonic modes, similar to all the CCM-operated PCM-controlled converters. In the case of the DCM-operated PCM-controlled buck converter, its operation in the odd harmonic modes is the consequence of an unstable pole in its open-loop power-stage dynamics.

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