Full SiC DCDC-Converter with a Power Density of more than 100kW/dm3

2015 ◽  
Vol 821-823 ◽  
pp. 884-888 ◽  
Author(s):  
Otto Kreutzer ◽  
Martin März ◽  
Hideki Nakata
Keyword(s):  
Power Density ◽  
High Power ◽  
Hybrid Vehicles ◽  
Switching Frequency ◽  
High Power Density ◽  
Passive Components ◽  
Custom Made ◽  
Power Stage ◽  
Parasitic Effects ◽  
Made In

This Paper describes a non-isolated bidirectional full SiC 800V 200kW DCDC-converter power stage for electric and hybrid vehicles that reaches a power density of more than 100 kW/dm3 at a switching frequency of 200 kHz. The high power density is achieved by the use of SiC-MOSFETs sintered on custom made Si3N4DCB-substrates controlled by custom made extremely flat drivers and a resulting very low inductive DC-link connection. All passive components like inductors and capacitor boards are custom made in order to keep all parasitic effects as low as possible. The power is subdivided on six interleaved phases to reduce the required capacitor ripple current capability.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

scholarly journals Monolithic Integrated High Frequency GaN DC-DC Buck Converters with High Power Density Controlled by Current Mode Logic Level Signal

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1540
Author(s):  
Longkun Lai ◽  
Ronghua Zhang ◽  
Kui Cheng ◽  
Zhiying Xia ◽  
Chun Wei ◽  
...  
Keyword(s):  
Power Density ◽  
Current Mode ◽  
Buck Converter ◽  
Switching Frequency ◽  
High Power Density ◽  
Current Mode Logic ◽  
Power Stage ◽  
Amplifier Stage ◽  
Gate Driver ◽  
Logic Level

Integration is a key way to improve the switching frequency and power density for a DC-DC converter. A monolithic integrated GaN based DC-DC buck converter is realized by using a gate driver and a half-bridge power stage. The gate driver is composed of three stages (amplitude amplifier stage, level shifting stage and resistive-load amplifier stage) to amplify and modulate the driver control signal, i.e., CML (current mode logic) level of which the swing is from 1.1 to 1.8 V meaning that there is no need for an additional buffer or preamplifier for the control signal. The gate driver can provide sufficient driving capability for the power stage and improve the power density efficiently. The proposed GaN based DC-DC buck converter is implemented in the 0.25 μm depletion mode GaN-on-SiC process with a chip area of 1.7 mm × 1.3 mm, which is capable of operating at high switching frequency up to 200 MHz and possesses high power density up to 1 W/mm2 at 15 V output voltage. To the authors’ knowledge, this is the highest power density for GaN based DC-DC converter at the hundreds of megahertz range.

High Power Density Motor and Inverter for RWD Hybrid Vehicles

2011 ◽  
Author(s):  
Kenji Arai ◽  
Kazuyuki Higashi ◽  
Tadaaki Iiyama ◽  
Hiroaki Murai ◽  
Shigeaki Ishikawa ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Hybrid Vehicles ◽  
High Power Density

scholarly journals A Comparative Study of Different Optimization Methods for Resonance Half-Bridge Converter

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 368 ◽  
Author(s):  
Navid Salehi ◽  
Herminio Martinez-Garcia ◽  
Guillermo Velasco-Quesada
Keyword(s):  
Comparative Study ◽  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Operation Mode ◽  
Optimization Methods ◽  
Switching Frequency ◽  
High Power Density ◽  
Operation Modes ◽  
Laboratory Prototype

The LLC resonance half-bridge converter is one of the most popular DC-DC converters and could easily inspire researchers to design a high-efficiency and high-power-density converter. LLC resonance converters have diverse operation modes based on switching frequency and load that cause designing and optimizing procedure to vary in different modes. In this paper, different operation modes of the LLC half-bridge converter that investigate different optimization procedures are introduced. The results of applying some usual optimization methods implies that for each operation mode some specific methods are more appropriate to achieve high efficiency. To verify the results of each optimization, numerous simulations are done by Pspice and MATLAB and the efficiencies are calculated to compare them. Finally, to verify the result of optimization, the experimental results of a laboratory prototype are provided.

scholarly journals A High Power Density Integrated Charger for Electric Vehicles with Active Ripple Compensation

2015 ◽  
Vol 2015 ◽  
pp. 1-18 ◽  
Author(s):  
Liwen Pan ◽  
Chengning Zhang
Keyword(s):  
Power Density ◽  
Electric Vehicles ◽  
High Power ◽  
Second Order ◽  
Motor Drive ◽  
Switching Frequency ◽  
High Power Density ◽  
Compensation Circuit ◽  
High Switching Frequency ◽  
The Impact

This paper suggests a high power density on-board integrated charger with active ripple compensation circuit for electric vehicles. To obtain a high power density and high efficiency, silicon carbide devices are reported to meet the requirement of high-switching-frequency operation. An integrated bidirectional converter is proposed to function as AC/DC battery charger and to transfer energy between battery pack and motor drive of the traction system. In addition, the conventional H-bridge circuit suffers from ripple power pulsating at second-order line frequency, and a scheme of active ripple compensation circuit has been explored to solve this second-order ripple problem, in which a pair of power switches shared traction mode, a ripple energy storage capacitor, and an energy transfer inductor. Simulation results in MATLAB/Simulink validated the eligibility of the proposed topology. The integrated charger can work as a 70 kW motor drive circuit or a converter with an active ripple compensation circuit for 3 kW charging the battery. The impact of the proposed topology and control strategy on the integrated charger power losses, efficiency, power density, and thermal performance has also been analysed and simulated.

scholarly journals Hybrid Multimodule DC-DC Converters for Ultrafast Electric Vehicle Chargers

Energies ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4949
Author(s):  
Mena ElMenshawy ◽  
Ahmed Massoud
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Controller Design ◽  
Power Level ◽  
Power Converter ◽  
Total Power ◽  
Switching Frequency ◽  
High Power Density ◽  
High Switching Frequency

To increase the adoption of electric vehicles (EVs), significant efforts in terms of reducing the charging time are required. Consequently, ultrafast charging (UFC) stations require extensive investigation, particularly considering their higher power level requirements. Accordingly, this paper introduces a hybrid multimodule DC-DC converter-based dual-active bridge (DAB) topology for EV-UFC to achieve high-efficiency and high-power density. The hybrid concept is achieved through employing two different groups of multimodule converters. The first is designed to be in charge of a high fraction of the total required power, operating at a relatively low switching frequency, while the second is designed for a small fraction of the total power, operating at a relatively high switching frequency. To support the power converter controller design, a generalized small-signal model for the hybrid converter is studied. Also, cross feedback output current sharing (CFOCS) control for the hybrid input-series output-parallel (ISOP) converters is examined to ensure uniform power-sharing and ensure the desired fraction of power handled by each multimodule group. The control scheme for a hybrid eight-module ISOP converter of 200 kW is investigated using a reflex charging scheme. The power loss analysis of the hybrid converter is provided and compared to conventional multimodule DC-DC converters. It has been shown that the presented converter can achieve both high efficiency (99.6%) and high power density (10.3 kW/L), compromising between the two other conventional converters. Simulation results are provided using the MatLab/Simulink software to elucidate the presented concept considering parameter mismatches.

scholarly journals High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

2021 ◽  
Vol 11 (23) ◽  
pp. 11350
Author(s):  
Seyed Abolfazl Mortazavizadeh ◽  
Simone Palazzo ◽  
Arturo Amendola ◽  
Enzo De Santis ◽  
Dario Di Ruzza ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Frequency ◽  
High Efficiency ◽  
Resonant Converters ◽  
Switching Frequency ◽  
High Power Density ◽  
Resonant Converter ◽  
Gan Hemt ◽  
Llc Resonant Converter

Soft switching for both primary and secondary side devices is available by using LLC converters. This resonant converter is an ideal candidate for today’s high frequency, high efficiency, and high power density applications like adapters, Uninterrupted Power Supplies (UPS), Solid State Transformers (SST), electric vehicle battery chargers, renewable energy systems, servers, and telecom systems. Using Gallium-Nitride (GaN)-based power switches in this converter merits more and more switching frequency, power density, and efficiency. Therefore, the present paper focused on GaN-based LLC resonant converters. The converter structure, operation regions, design steps, and drive system are described precisely. Then its losses are discussed, and the magnets and inductance characteristics are investigated. After that, various interleaved topologies, as a solution to improve power density and decrease current ripples, have been discussed. Also, some challenges and concerns related to GaN-based LLC converters have been reviewed. Commercially available power transistors based on various technologies, i.e., GaN HEMT, Silicon (Si) MOSFET, and Silicon Carbide (SiC) have been compared. Finally, the LLC resonant converter has been simulated by taking advantage of LTspice and GaN HEMT merits, as compared with Si MOSFETs.

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