Analysis of Hybrid Hetero-Homo Junction Lead-Free Perovskite Solar Cells by SCAPS Simulator

In this work, we report on the effect of substituting the active intrinsic i-layer on a conventional pin structure of lead-free perovskite solar cell (PSC) by a homo p-n junction, keeping the thickness of the active layer constant. It is expected that when the active i-layer is substituted by a p-n homo junction, one can increase the collection efficiency of the photo-generated electrons and holes due to the built-in electric field of the homo junction. The impact of the technological and physical device parameters on the performance parameters of the solar cell have been worked out. It was found that p-side thickness must be wider than the n-side, while its acceptor concentration should be slightly lower than the donor concentration of the n-side to achieve maximum efficiency. In addition, different absorber types, namely, i-absorber, n-absorber and p-absorber, are compared to the proposed pn-absorber, showing a performance-boosting effect when using the latter. Moreover, the proposed structure is made without a hole transport layer (HTL) to avoid the organic issues of the HTL materials. The back metal work function, bulk trap density and ETL material are optimized for best performance of the HTL-free structure, giving Jsc = 26.48, Voc = 0.948 V, FF = 77.20 and PCE = 19.37% for AM1.5 solar spectra. Such results highlight the prospective of the proposed structure and emphasize the importance of using HTL-free solar cells without deteriorating the efficiency. The solar cell is investigated by using SCAPS simulator.

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Optimization of lead-free perovskite solar cells in normal-structure with WO3 and water-free PEDOT: PSS composite for hole transport layer by SCAPS-1D simulation

Optical Materials ◽

10.1016/j.optmat.2021.111432 ◽

2021 ◽

Vol 120 ◽

pp. 111432

Author(s):

Hossein Alipour ◽

Abbas Ghadimi

Keyword(s):

Solar Cells ◽

Perovskite Solar Cells ◽

Normal Structure ◽

Hole Transport ◽

Transport Layer ◽

Lead Free ◽

Hole Transport Layer

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Analysis of the role of hole transport layer materials to the performance of perovskite solar cell

E3S Web of Conferences ◽

10.1051/e3sconf/20186701021 ◽

2018 ◽

Vol 67 ◽

pp. 01021 ◽

Cited By ~ 2

Author(s):

Istighfari Dzikri ◽

Michael Hariadi ◽

Retno Wigajatri Purnamaningsih ◽

Nji Raden Poespawati

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Perovskite Solar Cells ◽

Perovskite Solar Cell ◽

Open Circuit ◽

Hole Transport ◽

Transport Layer ◽

Hole Transport Layer

Research in solar cells is needed to maximize Indonesia’s vast solar potential that can reach up to 207.898 MW with an average radiation of 4.8 kWh/m2/day. Organometallic perovskite solar cells (PSCs) have gained immense attention due to their rapid increase in efficiency and compatibility with low-cost fabrication methods. Understanding the role of hole transport layer is very important to obtain highly efficient PSCs. In this work, we studied the effect of Hole Transport Layer (HTL) to the performance of perovskite solar cell. The devices with HTL exhibit substantial increase in power conversion efficiency, open circuit voltage and short circuit current compared to the device without HTL. The best performing device is PSC with CuSCN as HTL layer, namely Voc of 0.24, Isc of 1.79 mA, 0.27 FF and efficiency of 0.09%.

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Dibenzo-Tetraphenyl Diindeno as Hole Transport Layer for Perovskite Solar Cells Fabrication

10.26434/chemrxiv.11952267.v1 ◽

2020 ◽

Author(s):

Meenakshi Pegu ◽

Laura Calio ◽

Mehrad Ahmadpour ◽

Horst-Günter Rubahn ◽

Samrana Kazim ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Band Gap ◽

Perovskite Solar Cells ◽

Hole Transport ◽

Transport Layer ◽

Hole Transport Layer ◽

Promising Alternative ◽

Building Integrated Photovoltaics ◽

Polycyclic Aromatic

Semi-transparent perovskite solar cells have the competitive edge of being employed for building integrated photovoltaics due to their aesthetic benefits as light harvesting windows / facades. Perovskites have received considerable attention in recent years as a thin film photovoltaic alternative, that can also be tweaked for its transparency, evolving from potentially high bandgaps that are suited for semi-transparent solar cell fabrication. Due to the existing trade of between the efficiency and transparency of a perovskite solar cell, tuning the band gap can address this by making a bridge between the aforementioned parameters. We report our findings on the use of a wide-bandgap perovskite MAPbBr3, with a rational energetic level hole transport materials based on polycyclic aromatic hydrocarbon molecules that can be a promising alternative class of p-type material. In the present work, DBP (Dibenzo{[f,f' ]-4,4',7,7'-tetraphenyl}diindeno[1,2,3-cd :1',2',3'-lm]perylene, was evaluated with high band gap as well as with (FAPbI3)0.85(MAPbBr3)0.15 perovskites for the fabrication of solar cell. DBP based solar cells yielded competitive power conversion efficiencies as compared to classical HTMs.

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Design of Dopant and Lead-Free Novel Perovskite Solar Cell for 16.85% Efficiency

Polymers ◽

10.3390/polym13132110 ◽

2021 ◽

Vol 13 (13) ◽

pp. 2110

Author(s):

Syed Abdul Moiz ◽

Ahmed N. M. Alahmadi

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Power Conversion Efficiency ◽

Conversion Efficiency ◽

Power Conversion ◽

Perovskite Solar Cell ◽

Hole Transport ◽

Transport Layer ◽

Lead Free ◽

Hole Transport Layer

Halide based perovskite offers numerous advantages such as high-efficiency, low-cost, and simple fabrication for flexible solar cells. However, long-term stability as well as environmentally green lead-free applications are the real challenges for their commercialization. Generally, the best reported perovskite solar cells are composed of toxic lead (Pb) and unstable polymer as the absorber and electron/hole-transport layer, respectively. Therefore, in this study, we proposed and simulated the photovoltaic responses of lead-free absorber such as cesium titanium (IV) bromide, Cs2TiBr6 with dopant free electron phenyl-C61-butyric acid methyl ester (PCBM), and dopant free hole transport layer N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) for the Ag/BCP/PCBM/Cs2TiBr6/NPB/ITO based perovskite solar cell. After comprehensive optimization of each layer through vigorous simulations with the help of software SCAPS 1D, it is observed that the proposed solar cell can yield maximum power-conversion efficiency up to 16.85%. This efficiency is slightly better than the previously reported power-conversion efficiency of a similar type of perovskite solar cell. We believe that the outcome of this study will not only improve our knowledge, but also triggers further investigation for the dopant and lead-free perovskite solar cell.

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Performance of perovskite solar cell coated with graphene oxide as hole transport layer

Eastern-European Journal of Enterprise Technologies ◽

10.15587/1729-4061.2021.225420 ◽

2021 ◽

Vol 1 (12 (109)) ◽

pp. 36-43

Author(s):

Rustan Hatib ◽

Sudjito Soeparman ◽

Denny Widhiyanuriyawan ◽

Nurkholis Hamidi

Keyword(s):

Graphene Oxide ◽

Solar Cells ◽

Solar Cell ◽

Spin Coating ◽

Perovskite Solar Cells ◽

Hole Transport ◽

Transport Layer ◽

Degree Of Crystallinity ◽

Hole Transport Layer ◽

Photoelectric Properties

Organic metal halide perovskite has recently shown great potential for applications, as it has the advantages of low cost, excellent photoelectric properties, and high power conversion efficiency. The Hole Transport Material (HTM) is one of the most critical components in Perovskite Solar Cells (PSC). It has the function of optimizing the interface, adjusting the energy compatibility, and obtaining higher PCE. The inorganic p-type semiconductor is an alternative HTM due to its chemical stability, higher mobility, increased transparency in the visible region, and general valence band energy level (VB). Here we report the use of the Graphene Oxide (GO) layer as a Hole Transport Layer (HTL) to improve the perovskite solar cells' performance. The crystal structure and thickness of GO significantly affect the increase in solar cell efficiency. This perovskite film must show a high degree of crystallinity. The configuration of the perovskite material is FTO/NiO/GO/CH3NH3PbI3/ZnO/Ag. GO as a Hole Transport Layer can increase positively charged electrons' mobility to improve current and voltage. As a blocking layer that can prevent recombination. The GO can make the perovskite interface layer with smoother holes, and molecular uniformity occurs to reduce recombination. The method used in this study is by using spin coating. In the spin-coating process, the GO layer is coated on top of NiO with variations in the rotation of 700 rpm, 800 rpm, 900 rpm, 1,000 rpm, and 1,500 rpm. The procedure formed different thicknesses from 332.5 nm, 314.7 nm, 256.4 nm, 227.4 to 204.5 nm. The results obtained at a thickness of 227.4 nm reached the optimum efficiency, namely 15,3 %. Thus, the GO material as a Hole Transport Layer can support solar cell performance improvement by not being too thick and thin

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Dibenzo-Tetraphenyl Diindeno as Hole Transport Layer for Perovskite Solar Cells Fabrication

10.26434/chemrxiv.11952267 ◽

2020 ◽

Author(s):

Meenakshi Pegu ◽

Laura Calio ◽

Mehrad Ahmadpour ◽

Horst-Günter Rubahn ◽

Samrana Kazim ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Band Gap ◽

Perovskite Solar Cells ◽

Hole Transport ◽

Transport Layer ◽

Hole Transport Layer ◽

Promising Alternative ◽

Building Integrated Photovoltaics ◽

Polycyclic Aromatic

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Improving stability of organometallic-halide perovskite solar cells using exfoliation two-dimensional molybdenum chalcogenides

npj 2D Materials and Applications ◽

10.1038/s41699-020-00173-1 ◽

2020 ◽

Vol 4 (1) ◽

Author(s):

Meiying Liang ◽

Adnan Ali ◽

Abdelhak Belaidi ◽

Mohammad Istiaque Hossain ◽

Oskar Ronan ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Buffer Layer ◽

Perovskite Solar Cells ◽

Hole Transport ◽

Transport Layer ◽

Hole Transport Layer ◽

Two Dimensional ◽

Halide Perovskite ◽

The Stability

Abstract Organometallic-halide perovskite solar cells (PSCs) are emerging as the most promising next generation solar cell devices. However, the stability is still the main bottleneck of their further development. Here, we introduce two-dimensional (2D) molybdenum chalcogenides (MoS2 and MoSe2) (MCs) nanoflakes as a buffer layer between perovskite layer and hole transport layer (HTL) to improve the stability of the organometallic-halide PSCs. 2D MCs are obtained via liquid-phase exfoliated (LPE) approach, and Glass/FTO/compact-TiO2/ mesoporous-TiO2/FA85MA15PbI85Br15/2D MCs/Spiro-OMeTAD/Au structured solar cell devices are designed and fabricated. In this system, 2D MCs act both as a protective layer and an additional HTL of PSCs. This kind of PSCs achieve a relatively high-power conversion efficiency (PCE) of 14.9%, along with a much longer lifetime stability compared to the standard PSCs. After 1 h, PCE of the PSC adding a 2D MCs buffer layer could maintain 93.1% of initial value, while the PCE of the standard PSC dropped dramatically to 78.2% of initial efficiency. Our results pave the way towards the implementation of 2D MCs nanoflakes as a material able to boost the shelf life of PSCs and further provide the opportunity to fabricate large-area PSCs in view of their commercialization.

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Synergy of Bis(Sulfanylidene)Tungsten and Spiro-Ometad for an Efficient Perovskite Solar Cell

International Journal of Engineering and Advanced Technology - Regular Issue ◽

10.35940/ijeat.a1149.109119 ◽

2019 ◽

Vol 9 (1) ◽

pp. 4011-4016

Keyword(s):

Solar Cells ◽

Solar Cell ◽

High Efficiency ◽

Perovskite Solar Cells ◽

Perovskite Solar Cell ◽

Hole Transport ◽

Transport Layer ◽

Electron Transport Layer ◽

Hole Transport Layer ◽

Direct Band

The researchers now days are avid of solar cells despite the efficiency issues. As lead-based halide perovskite exhibit toxic nature alternatives for the anti- toxic perovskite solar cells(PSCs) are gaining much research. Bis(sulfanylidene )tungsten is a toxic free feasible emerging option with direct band gap of value 1.8 eV. Tungsten disulfide is other chemical name of Bis(sulfanylidene)tungsten. In this paper, perovskite solar cell (PSC) with Bis(sulfanylidene)tungsten (WS2 ) as electron transport layer and spiro-OMeTAD as hole transport layer is modelled and simulated using SCAPS software to analyze performance parameters. The device simulations results are compared for comprehensive defect study of WS2 as ETL. With integration of WS2 and spiro-OMeTAD in the perovskite design, the outcomes are proficient enough with 25.96% of PCE, 22.06 mA/cm2 Jsc, 1.280V Voc and 91.76% FF. Launching the batch setup for absorber layer thickness further resulted with competent PCE 27.78%. The outcomes signified that the toxic-free WS2 based PSC can be a prominent upcoming perspective in terms of environmentally pristine nature and capitulate comparative high efficiency

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Effect of V-Incorporated NiO Hole Transport Layer on the Performance of Inverted Perovskite Solar Cells

Materials Proceedings ◽

10.3390/iocn2020-07968 ◽

2020 ◽

Vol 4 (1) ◽

pp. 21

Author(s):

Ashique Kotta ◽

Hyung-Kee Seo

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Power Conversion Efficiency ◽

Power Conversion ◽

Perovskite Solar Cells ◽

Hole Transport ◽

Transport Layer ◽

Hole Transport Layer ◽

Hole Transporting ◽

P Type

Organic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing future generation solar cells, due to their high efficiency exceeding 25%. For inverted type perovskite solar cells, the hole transporting layer plays a crucial role in improving the efficiency and stability of the perovskite solar cells by modifying band alignment, electric conductivity, and interfacial recombination losses. Here, vanadium doped NiO is selected as a hole transporting layer to study the impact of V dopant on the optoelectronic properties of NiO and photovoltaic performance. The prepared materials are characterized using XRD, SEM, TEM, and XPS. A TEM micrograph confirms that p-type materials have a small spherical dot structure. The V-doped NiO, used as a hole-extraction layer, can be prepared by a simple solvothermal decomposition method. The presence of V in the NiO layer has an influence on the conductivity of the NiO layer. Besides, synthesized p-type material can be used to fabricate a relatively low processing temperature, and has the advantage of a wide choice of transparent conductive oxide substrate. As a result, an inverted type planar perovskite solar cell incorporating of vanadium in NiO hole-transport layer improves the power conversion efficiency. The photovoltaic property of the prepared solar cell is measured under AM 1.5 G simulated light. The photocurrent density is 21.09 mA/cm2, open-circuit voltage is 1.04 V, and the fill factor is 0.63. As a result, the overall power conversion efficiency reaches 13.82%.

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