scholarly journals Porous Silicon Biosensor for the Detection of Bacteria through Their Lysate

Proceedings ◽  
2020 ◽  
Vol 60 (1) ◽  
pp. 36
Author(s):  
Roselien Vercauteren ◽  
Audrey Leprince ◽  
Jacques Mahillon ◽  
Laurent A. Francis
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Bacterial Lysate ◽  
Fast Detection ◽  
Porous Layers ◽  
Deep Blue ◽  
Diffusion Limited ◽  
Colony Forming Units ◽  
Selective Lysis ◽  
Microfabrication Techniques

Porous silicon (PSi) has been widely used as a biosensor over the last years due to its large surface area and its optical properties. Most PSi biosensors consist in close-ended porous layers, and, because of the diffusion-limited infiltration of the analyte, they lack sensitivity and speed of response. In order to overcome these shortcomings, PSi membranes (PSiMs) have been fabricated using electrochemical etching and standard microfabrication techniques. In this work, PSiMs have been used for the optical detection of Bacillus cereus lysate. Before detection, the bacteria are selectively lysed by PlyB221, an endolysin encoded by the bacteriophage Deep-Blue targeting B. cereus. The detection relies on the infiltration of bacterial lysate inside the membrane, which induces a shift of the effective optical thickness. The biosensor was able to detect a B. cereus bacterial lysate, with an initial bacteria concentration of 106 colony forming units per mL (CFU/mL), in less than 10 min. This work also demonstrates the selectivity of the lysis before detection. Not only does this detection platform enable the fast detection of bacteria, but the same technique can be extended to other bacteria using selective lysis.

scholarly journals Porous Silicon Biosensor for the Detection of Bacteria through Their Lysate

Biosensors ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 27
Author(s):  
Roselien Vercauteren ◽  
Audrey Leprince ◽  
Jacques Mahillon ◽  
Laurent A. Francis
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Bacterial Lysate ◽  
Fast Detection ◽  
Porous Layers ◽  
Deep Blue ◽  
Diffusion Limited ◽  
Colony Forming Units ◽  
Selective Lysis ◽  
Microfabrication Techniques

Porous silicon (PSi) has been widely used as a biosensor in recent years due to its large surface area and its optical properties. Most PSi biosensors consist in close-ended porous layers, and, because of the diffusion-limited infiltration of the analyte, they lack sensitivity and speed of response. In order to overcome these shortcomings, PSi membranes (PSiMs) have been fabricated using electrochemical etching and standard microfabrication techniques. In this work, PSiMs have been used for the optical detection of Bacillus cereus lysate. Before detection, the bacteria are selectively lysed by PlyB221, an endolysin encoded by the bacteriophage Deep-Blue targeting B. cereus. The detection relies on the infiltration of bacterial lysate inside the membrane, which induces a shift of the effective optical thickness. The biosensor was able to detect a B. cereus bacterial lysate, with an initial bacteria concentration of 105 colony forming units per mL (CFU/mL), in only 1 h. This proof-of-concept also illustrates the specificity of the lysis before detection. Not only does this detection platform enable the fast detection of bacteria, but the same technique can be extended to other bacteria using selective lysis, as demonstrated by the detection of Staphylococcus epidermidis, selectively lysed by lysostaphin.

Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Shereen M. Faraj ◽  
Shaimaa M. Abd Al-Baqi ◽  
Nasreen R. Jber ◽  
Johnny Fisher
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Diode Lasers ◽  
Focus Of Attention ◽  
Blue Laser ◽  
Uniform Structure ◽  
Porous Layers ◽  
Current Densities ◽  
P Type ◽  
532 Nm

Porous silicon (PS) has become the focus of attention in upgrading silicon for optoelectronics. In this work, various structures were produced depending on the formation parameters by photo-electrochemical etching (PECE) process of n- and p-type silicon wafer at different time durations (5–90 mins) and different current densities (5, 15, and 20 mA/cm2) for each set of time durations. Diode lasers of 405 nm, 473 nm, and 532 nm wavelengths, each 50 mW power, were used to illuminate the surface of the samples during the etching process. The results showed that controlled porous layers were achieved by using blue laser, giving uniform structure which can make it possible to dispense with expensive methods of patterning the silicon.

Gas Transport and Response in Porous Silicon Sensors

2010 ◽  
Vol 1253 ◽  
Author(s):  
Serdar Ozdemir ◽  
James L Gole
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Room Temperature ◽  
Electrochemical Etching ◽  
Knudsen Diffusion ◽  
Gas Diffusion ◽  
Silicon Sensors ◽  
Response And Recovery ◽  
Ppm Level ◽  
Microfabrication Techniques

AbstractNanopore covered microporous silicon conductometric gas sensors have been produced via electrochemical etching and standard microfabrication techniques. Reversible and sensitive gas sensors working at room temperature have been fabricated. Sensing of NH3, NOx and PH3 at or below the ppm level have been achieved. The porous silicon (PS) surface has been modified using selective coatings including electroless tin, gold, nickel and copper solutions to increase the response to NOx, NH3, and PH3 respectively. The diffusion of the analyte species has been investigated in the nanopore and micropore regimes by numerical analysis. Comparing the response time of the hybrid porous sensor surface with numerical diffusion calculations on the pores, it has been observed that Knudsen diffusion time scales dominate the sensor response. A transduction model is proposed based on nanopore limited gas diffusion and the experimental response and recovery data.

scholarly journals Photo and electroluminescence of porous silicon layers

BIBECHANA ◽  
2012 ◽  
Vol 8 ◽  
pp. 46-52
Author(s):  
E Haji-Ali
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Electrochemical Cell ◽  
Electrochemical Etching ◽  
Light Illumination ◽  
Porous Layers ◽  
Si Substrates ◽  
Orange Yellow ◽  
Intense Light ◽  
P Type

Porous silicon layers were prepared by both chemical and electrochemical methods on n- and ptype Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates.An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emissions ranging from dark red to orange-yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum, and heat-treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied.Keywords: Porous silicon layers; photoluminescence; electroluminescenceDOI: http://dx.doi.org/10.3126/bibechana.v8i0.4897  BIBECHANA 8 (2012) 46-52

scholarly journals Design, fabrication, and optical characterization of one-dimensional photonic crystals based on porous silicon assisted by in-situ photoacoustics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Cristian Felipe Ramirez-Gutierrez ◽  
Harol David Martinez-Hernandez ◽  
Ivan Alonso Lujan-Cabrera ◽  
Mario Enrique Rodriguez-García
Keyword(s):  
Porous Silicon ◽  
Photonic Crystals ◽  
Electrochemical Etching ◽  
Visible Range ◽  
Fundamental Parameter ◽  
Carrier Distribution ◽  
One Dimensional ◽  
Porous Layers ◽  
Effective Media

Abstract We present a methodology to fabricate one-dimensional porous silicon (PSi) photonic crystals in the visible range by controlled etching and monitored by photoacoustics. Photoacoustic can record in-situ information about changes in the optical path and chemical reaction as well as in temperature, refractive index, and roughness during porous layers formation. Radiometry imaging can determine the carrier distribution of c-Si substrate that is a fundamental parameter to obtain high-quality PSi films. An electrochemical cell was calibrated through a series of single PSi layers that allows knowing the PA amplitude period, porosity, and roughness as a function of the current density. Optical properties of single layers were determined using the reflectance response in the UV-Vis range to solve the inverse problem through genetic algorithms. PhC structures were designed using the transfer matrix method and effective media approximation.Based on the growth kinetics of PSi single layers, those structures were fabricated by electrochemical etching monitored and controlled by in-situ photoacoustics.

Quantum Confinement Effects on the Dielectric Constant of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux
Keyword(s):  
Dielectric Constant ◽  
Porous Silicon ◽  
Size Effects ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Index Of Refraction ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Quantum Confinement Effects ◽  
Shallow Impurities

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.

Nanostructured porous silicon by laser assisted electrochemical etching

2009 ◽  
Vol 285 (3) ◽  
pp. 137-142 ◽  
Author(s):  
J. Li ◽  
C. Lu ◽  
X.K. Hu ◽  
Xiujuan Yang ◽  
A.V. Loboda ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching

scholarly journals Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

2018 ◽  
Vol 7 (3.11) ◽  
pp. 48
Author(s):  
Kevin Alvin Eswar ◽  
Mohd Husairi Fadzillah Suhaimi ◽  
Muliyadi Guliling ◽  
Zuraida Khusaimi ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Annealing Temperature ◽  
Electrochemical Etching ◽  
Texture Coefficient ◽  
Zno Nanostructures ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Post Annealing Temperature

ZnO Nanostructures have been successfully deposited on of Porous silicon (PSi) via wet colloid chemical approach. PSi was prepared by electrochemical etching method. ZnO/PSi thin films were annealed in different temperature in the range of 300 °C to 700 °C. Surface morphology studies were conducted using field emission scanning microscopy (FESEM). Flower-like structures of ZnO were clearly seen at annealing temperature of 500 °C. The X-ray diffraction spectra (XRD) have been used to investigate the structural properties. There are three dominant peaks referred to plane (100), (002) and (101) indicates that ZnO has a polycrystalline hexagonal wurtzite structures. Plane (002) shows the highest intensities at annealing temperature of 500 °C. Based on plane (002) analysis, the sizes were in range of 30.78 nm to 55.18. In addition, it was found that the texture coefficient of plane (002) is stable compared to plane (100) and (101). 

Structural, Surface Morphological and Photoluminescence Properties of Nanostructured Porous Silicon Material for Optoelectronics Application

2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Light Emitting Diode ◽  
Radiative Transition ◽  
Sem Images ◽  
Optoelectronic Application ◽  
Gap Opening ◽  
P Type

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.

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