scholarly journals Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

2018 ◽  
Vol 7 (3.11) ◽  
pp. 48
Author(s):  
Kevin Alvin Eswar ◽  
Mohd Husairi Fadzillah Suhaimi ◽  
Muliyadi Guliling ◽  
Zuraida Khusaimi ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Annealing Temperature ◽  
Electrochemical Etching ◽  
Texture Coefficient ◽  
Zno Nanostructures ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Post Annealing Temperature

ZnO Nanostructures have been successfully deposited on of Porous silicon (PSi) via wet colloid chemical approach. PSi was prepared by electrochemical etching method. ZnO/PSi thin films were annealed in different temperature in the range of 300 °C to 700 °C. Surface morphology studies were conducted using field emission scanning microscopy (FESEM). Flower-like structures of ZnO were clearly seen at annealing temperature of 500 °C. The X-ray diffraction spectra (XRD) have been used to investigate the structural properties. There are three dominant peaks referred to plane (100), (002) and (101) indicates that ZnO has a polycrystalline hexagonal wurtzite structures. Plane (002) shows the highest intensities at annealing temperature of 500 °C. Based on plane (002) analysis, the sizes were in range of 30.78 nm to 55.18. In addition, it was found that the texture coefficient of plane (002) is stable compared to plane (100) and (101). 

scholarly journals Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

2015 ◽  
Vol 773-774 ◽  
pp. 626-631
Author(s):  
Kevin Alvin Eswar ◽  
Ajis Lepit ◽  
Rosfayanti Rasmidi ◽  
F.S. Husairi ◽  
A.N. Afaah ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Annealing Temperature ◽  
Electrochemical Etching ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Nanostructures ◽  
Post Annealing ◽  
Post Annealing Temperature ◽  
Uv Range

In this work, seeded porous silicon (PSi) was used as a substrate in the growth of ZnO nanostructures. PSi was prepared by electrochemical etching method. ZnO thin films as seeded were deposited via sol-gel spin coating method. ZnO nanostructures were grown on seeded PSi using hydrothermal immersion method. In order to study the effect of post-heat treatment on the substrate, post annealing temperature were varied in the range of 300 to 700 °C. The FESEM results shows ZnO thin film composed of nanoparticles were distributed over the PSi surface. Based on AFM characterization, the smoothest surface was produced at post annealing temperature of 500 °C. There are two different peaks appeared in PL characterization. The peak in near-UV range is belonging to ZnO thin films while a broad peak in visible range can be attributed to ZnO defects and PSi surface. In addition, FESEM, XRD and PL were used to characterize the ZnO nanostructures. The FESEM results revealed ZnO nano-flower were successfully grown on seeded PSi. Hexagonal wurtzite of ZnO with dominated by the plane (100), (002), and (101) was found by XRD characterization. Two different peaks in UV range and visible range can be attributed to ZnO nano-flower and various defects of ZnO, respectively.

STRUCTURE AND MAGNETIC PROPERTIES IN Mn-DOPED Si

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3469-3472 ◽  
Author(s):  
Z. Y. ZHAI ◽  
X. S. WU ◽  
W. ZHANG ◽  
B. QIAN ◽  
Y. M. ZHANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Magnetic Circular Dichroism ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Post Annealing ◽  
Two Phases ◽  
Mn Doped ◽  
Post Annealing Temperature

The composition of Mn 0.05 Si 0.95 polycrystalline films on (001) Si substrate are prepared by vacuum deposition and post-crystallization processes. X-ray diffraction studies indicate that there are two phases coexist in the film: tetragonal, Mn 4 Si 7 and diamond-like Si (Mn) . The content of Si(Mn) phase increases with increasing the post-annealing temperature. Temperature dependence of the magnetization shows that there are two ferromagnetic phases with Curie temperature of around 50 K and near room temperature, which is confirmed by x-ray magnetic circular dichroism (XMCD).

Post-Annealing Temperature Effect on ZnO Nanostructures Growth on Porous Silicon

2015 ◽  
Vol 1109 ◽  
pp. 434-438
Author(s):  
Kevin Alvin Eswar ◽  
Husairi Fadzilah Shuhaimi ◽  
Muzammil Mat Akhir ◽  
Nurul Afaah Abdullah ◽  
Noor Aadilla Abdul Aziz ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Structural Defects ◽  
Visible Range ◽  
Zno Nanostructures ◽  
X Ray Diffraction ◽  
Immersion Method ◽  
Zno Nanostructure ◽  
Annealing Temperatures ◽  
Post Annealing ◽  
Post Annealing Temperature

In this study, ZnO nanostructures were synthesized on porous silicon (PSi) substrate using hydrothermal immersion method. Different post-annealing temperatures were varied from 300°C to 600°C. Surface morphology was studied by field emission scanning electron microscopy. It shows that a better shape was produce at annealing temperatures of 500°C. Structural studies of ZnO nanostructure were implemented using X-ray diffraction grating. The result shows post-annealing can influence the crystallinty of ZnO. Photoluminescence spectra were used to study the optical properties of ZnO nanostructure. The result shows that peak corresponds to ZnO nanostructures are appeared in UV range. Besides, broad peaks are also appeared in visible range which is attributed to structural defects and PSi substrate.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

The Effect of Annealing Conditions on Magnetron Sputtered Superconducting Tl-Based Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
S.H. Liou
Keyword(s):  
Annealing Temperature ◽  
Superconducting Films ◽  
Film Plane ◽  
Major Phase ◽  
X Ray ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Heat Treated ◽  
Post Annealing Temperature

AbstractThe annealing steps have been shown to be a crucial determinant of the quality of Tl‐based superconducting films. In this study, we discuss the formation of the superconducting Tl2Ba2CaCu2O8 and Tl2Ba2Ca2Cu3O10 phases with varied post‐annealing temperature and fixed annealing time. A x‐ray, electron micro‐probe, and scanning electron microscopy were carried out to evaluate the structure of superconducting phases formed for each annealing condition. For films deposited on SrTiO3 substrates and heat‐treated at 870°C for 15 min, the lower Tc phase Tl2Ba2CaCu2O8 becomes a major phase. The films consist of nearly pure Tl2Ba2Ca2Cu3O10 phase with Tc (R=0) in the range of 100K to 118K and c‐axis perpendicular to the film plane were obtained after annealing 880‐890°C for 15 min. These films were epitaxy growth on SrTi03 substrates.

Crystallization Dynamics Of Ferroelectric Pzt (52/48) Thin Film Prepared By Reactive Cosputtering On Pt On Si(100)

1993 ◽  
Vol 321 ◽  
Author(s):  
Woong Kil Choo ◽  
Hyo Jin Kim ◽  
Kwang Young Kim ◽  
Sung Tae Kim
Keyword(s):  
Thin Film ◽  
Crystallization Process ◽  
Annealing Temperature ◽  
Perovskite Phase ◽  
X Ray Diffraction ◽  
Post Annealing ◽  
Pzt Films ◽  
Crystallization Dynamics ◽  
Post Annealing Temperature ◽  
Ferroelectric Perovskite

ABSTRACTThe crystallization process and microstructural evolution of PZT (52/48) thin films deposited on Pt thin film electrode on Si (100) by reactive multitarget cosputtering technique have been studied as a function of post-annealing temperature and holding time. As annealing temperature increases, the Amorphous PZT films as-deposited at low substrate temperature of 200 °C crystallize into pyrochlore at 450 °C and ferroelectric perovskite phase with pseudo-cubic structure at 550 °C in sequence. X-ray diffraction data show crystallization into perovskite phase to be complete in 30 Minutes at 550 °C. Furthermore, the change of PZT/Pt/Ti/SiO2/Si interfacial TEM Morphology during heat-treatment has been closely scrutinized.

Effect of Post Annealing Temperature on Cerium Doped ZnO Nanostructures

2013 ◽  
Vol 481 ◽  
pp. 45-48 ◽  
Author(s):  
Chetan K. Kasar ◽  
Ulhas S. Sonawane ◽  
D.S. Patil
Keyword(s):  
Annealing Temperature ◽  
Structural And Optical Properties ◽  
Minor Variation ◽  
X Ray ◽  
Post Annealing ◽  
Coating Method ◽  
Average Transmission ◽  
Doped Zno ◽  
A Minor ◽  
Post Annealing Temperature

In this paper, the effect of post annealing temperature for 5% Cerium doped ZnO thin films have been investigated. Films have been deposited on to the glass substrate using spin coating method. The structural and optical properties of the films were characterized using X-ray diffractometer and UV-spectrophotometer. Transmission of the films was found to be increase with increasing post annealing temperature. Average transmission of all the films was found to be more than 90%. Optical band gap show a minor variation with post annealing temperature. Nanostructures of cerium doped ZnO have been confirmed through AFM.

Influence of Post Annealing Temperature on the Properties of ZnO Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 602-606
Author(s):  
Samsiah Ahmad ◽  
N.D.M. Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Current Voltage ◽  
Post Annealing Temperature

Zinc Oxide (ZnO) films were prepared on unheated glass substrate by radio frequency (RF) magnetron sputtering technique and post deposition annealing of the ZnO thin film were performed at 350, 400, 450 and 500°C. Post annealing temperature was found to improve the structural and electrical characteristics of the deposited films. The structural properties of the films were carried out by the surface profiler, X-Ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) while the electrical properties were measured using current voltage (I-V) probe measurement system. All samples exhibit the (002) peak and the sample annealed at 500°C gives the highest crystalline quality, highest Rms roughness (1.819 nm) and highest electrical conductivity (3.28 x 10-3 Sm-1).

Preparation of Porous Silicon and Effect of Gettering on the Resistivity

2012 ◽  
Vol 476-478 ◽  
pp. 1794-1797 ◽  
Author(s):  
Su Xia Guo ◽  
Yi Tan ◽  
Jia Yan Li ◽  
Ya Qiong Li ◽  
Chen Guang Liu
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Pore Diameter ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

The porous silicon layer was fabricated by electrochemical etching process using an aqueous HF-based electrolyte. The characterizations of porous silicon layer were investigated by Emission-type scanning electron microscope (SEM), Raman spectra and X-ray diffraction (XRD). With the current density increasing, the pore diameter and density become much bigger. This result also was confirmed by Raman spectra and XRD result of samples, which revealed the decreasing of grain size of silicon. The resistivity of crystalline silicon increased when the porous layer was removed after heat treatment at 850°C for 2.5h, which should be attributed to the gettering process of porous silicon.

Structure and Magnetism of Fe/Al Nanostructures Grown by Ion-Beam Sputtering

2013 ◽  
Vol 856 ◽  
pp. 294-298
Author(s):  
A. Vyas ◽  
T. Shripathi ◽  
N. Lakshmi ◽  
O.H. Seeck ◽  
A. Vij ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Ion Beam ◽  
Structural Studies ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Subsequent Growth ◽  
X Ray ◽  
Beam Sputtering ◽  
Higher Temperature ◽  
Structural And Magnetic Properties

Synchrotron based X-ray diffraction (XRD) and X-ray reflectivity (XRR) were used to study the structural and magnetic properties of ion beam sputtered Fe/Al multilayer sample (MLS) as a function of annealing temperature. The structural studies show substantial intermixing between the layers which results in multilayer of complicated structures i.e. formation of thin intermixed FeAl layer at the interface during deposition, the nucleation and precipitation of disordered FeAl layer, and its subsequent growth to Fe3Al at higher temperature. The results were also supported by TEM measurements. Magnetization decreases with increase in temperature and Curie temperature (Tc) is found to be much less than that of bulk bcc Fe.

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