scholarly journals Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3953 ◽  
Author(s):  
Wang ◽  
Duan ◽  
Cao ◽  
Liu ◽  
Wang ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Microwave Plasma ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Concentration Difference ◽  
Plasma Chemical Vapor Deposition ◽  
Step Flow ◽  
Single Crystal Diamond

: The high-quality single crystal diamond (SCD) grown in the Microwave Plasma Chemical Vapor Deposition (MPCVD) system was studied. The CVD deposition reaction occurred in a 300 torr high pressure environment on a (100) plane High Pressure High Temperature (HPHT) diamond type II a substrate. The relationships among the chamber pressure, substrate surface temperature, and system microwave power were investigated. The surface morphology evolution with a series of different concentrations of the gas mixture was observed. It was found that a single lateral crystal growth occurred on the substrate edge and a systemic step flow rotation from the [100] to the [110] orientation was exhibited on the surface. The Raman spectroscopy and High Resolution X-Ray Diffractometry (HRXRD) prove that the homoepitaxy part from the original HPHT substrate shows a higher quality than the lateral growth region. A crystal lattice visual structural analysis was applied to describe the step flow rotation that originated from the temperature driven concentration difference of the C2H2 ion charged particles on the SCD center and edge.

Lateral outward growth of single-crystal diamond by two different structures of microwave plasma reactors

CrystEngComm ◽  
2022 ◽  
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Hongyang Zhao ◽  
Deng Gao ◽  
Qiuming Fu
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Lateral Growth ◽  
Plasma Reactors ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

Step growth in single crystal diamond grown by microwave plasma chemical vapor deposition

2006 ◽  
Vol 15 (2-3) ◽  
pp. 304-308 ◽  
Author(s):  
Pawan K. Tyagi ◽  
Abha Misra ◽  
K.N. Narayanan Unni ◽  
Padmnabh Rai ◽  
Manoj K. Singh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond ◽  
Step Growth

scholarly journals Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Nian Liu ◽  
Kohki Sugawara ◽  
Naoya Yoshitaka ◽  
Hideaki Yamada ◽  
Daisuke Takeuchi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Removal Rate ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Highly Efficient ◽  
Atomic Force ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Measurement Results

Abstract Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap semiconductor materials such as 4H-SiC (0001) and GaN (0001). In this study, a 20-mm square large mosaic single crystal diamond (SCD) substrate synthesized by microwave plasma chemical vapor deposition (CVD) was polished by PAP. Argon-based plasma containing oxygen was used in PAP to modify the surface of quartz glass polishing plate, and a high material removal rate (MRR) of 13.3 μm/h was obtained. The flatness of SCD polished by PAP measured by an interferometer was 0.5 μm. The surface roughness measured by both scanning white light interferometer (SWLI) (84-μm square) and atomic force microscope (AFM) (5-μm square) was less than 0.5 nm Sq. The micro-Raman spectroscopy measurement results of mosaic SCD substrate processed by PAP showed that residual stress and non-diamond components on the surface after PAP processing were below the detection limit.

scholarly journals Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 91 ◽  
Author(s):  
Xiwei Wang ◽  
Peng Duan ◽  
Zhenzhong Cao ◽  
Changjiang Liu ◽  
Dufu Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Microwave Plasma ◽  
High Stress ◽  
Central Area ◽  
Chemical Vapor ◽  
Movement Direction ◽  
Average Growth ◽  
Step Flow ◽  
Single Crystal Diamond

The diamond mosaic grown on the single-crystal diamond substrates by the microwave plasma chemical vapor deposition (MPCVD) method has been studied. The average growth rate was about 16–17 μm/h during 48 hours’ growth. The surface morphologies of the as-grown diamond layer were observed. It was found that the step flow was able to move across the substrates and cover the junction interface. Raman spectroscopic mapping in the central area of the junction revealed the high stress region movement across the junction interface from one substrate to the other for about 200–400 μm. High-resolution X-ray diffractometry (HRXRD) results proved that the surface step flow movement direction had nothing to do with the off-axis directions of the original substrates. It was found that the surface height difference of substrate was the main driving force for the step flow movement, junction combination and surface morphology changing. The mechanism of the mosaic interface junction combination and step flow transformation on the mosaic surface was proposed.

scholarly journals Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3006
Author(s):  
Qiang Wei ◽  
Xiaofan Zhang ◽  
Fang Lin ◽  
Ruozheng Wang ◽  
Genqiang Chen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cross Sections ◽  
Microwave Plasma ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Optical Microscope ◽  
Epitaxial Lateral Overgrowth ◽  
Plasma Chemical Vapor Deposition ◽  
Lateral Overgrowth ◽  
Single Crystal Diamond

Two types of a trench with conventional vertical and new reverse-V-shaped cross-sections were fabricated on single crystal diamond (SCD) substrate using a micro-jet water-assisted laser. In addition, a microwave plasma chemical vapor deposition device was used to produce multiple micrometer-sized channels using the epitaxial lateral overgrowth technique. Raman and SEM methods were applied to analyze both types of growth layer characterization. The hollowness of the microchannels was measured using an optical microscope. According to the findings, the epitaxial lateral overgrowth layer of the novel reverse-V-shaped trench produced improved SCD surface morphology and crystal quality.

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