Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes A1(TO), E1(TO), and E2(High) for the hexagonal structure of GaN.

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Structural and Optical Changes of Undoped GaN Layers Grown via Radio-frequency Magnetron Sputtering Obtained from GaN Powders

European Journal of Engineering Research and Science ◽

10.24018/ejers.2019.4.2.1164 ◽

2019 ◽

Vol 4 (2) ◽

pp. 59-63

Author(s):

Erick Gastellóu ◽

Crisoforo Morales ◽

Godofredo García ◽

Rafael García ◽

Gustavo Alonso Hirata ◽

...

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Crystal Size ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

X Ray Diffraction ◽

Homogeneous Surface ◽

X Ray ◽

Significant Difference ◽

Diffraction Patterns

Undoped GaN layers were grown via radio-frequency magnetron sputtering, using a target manufactured with undoped GaN powders. Where the GaN powders were sintetized by nitridation of metallic gallium at 1000 °C in ammonia flow for two hours. X-ray diffraction patterns demonstrated that there are not a significant difference between the diffraction angles of the GaN powders and the GaN layers. The x-ray diffraction patterns for the GaN powders showed narrow peaks with a crystal size of 41 nm, while the GaN layers showed broad peaks with a crystal size of 7.7 nm. Scanning electron microscopy micrographs demonstrated the formation of crystals of irregular size with an average length of 1.56 μm for the GaN powders, while a homogeneous surface morphology with a thickness of 6.6 μm for the GaN layers was observed. Photoluminescence spectra showed a high emission at 3.49 eV (355.13 nm) for the GaN powders and an emission band energy located at 3.42 eV (361.54 nm) for the GaN layers, both emission bands were related to the band-to-band transition for the GaN. Raman spectra for the GaN powders showed the A1(TO), E1(TO), and E2(High) classical vibration modes. The GaN layers only showed the A1(TO) mode.

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Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1−XO Films Obtained through Radio-Frequency Magnetron Sputtering

Membranes ◽

10.3390/membranes11050373 ◽

2021 ◽

Vol 11 (5) ◽

pp. 373

Author(s):

Wen-Yen Lin ◽

Feng-Tsun Chien ◽

Hsien-Chin Chiu ◽

Jinn-Kong Sheu ◽

Kuang-Po Hsueh

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

X Ray Diffraction ◽

Free Electrons ◽

X Ray ◽

Mg Content

Zirconium-doped MgxZn1−xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1−xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.

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In-situ x-ray studies of compositional control during synthesis of LaGaO3 by radio frequency-magnetron sputtering

Applied Physics Letters ◽

10.1063/1.4929753 ◽

2015 ◽

Vol 107 (8) ◽

pp. 081606 ◽

Cited By ~ 3

Author(s):

Matthew J. Highland ◽

Dillon D. Fong ◽

Guangxu Ju ◽

Carol Thompson ◽

Peter M. Baldo ◽

...

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

X Ray ◽

Compositional Control

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Effect of Post-Annealing Treatment on the Structure and Luminescence Properties of AIN:Tb3+ Thin Films Prepared by Radio Frequency Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.890.299 ◽

2017 ◽

Vol 890 ◽

pp. 299-302 ◽

Cited By ~ 2

Author(s):

Karem Yoli Tucto Salinas ◽

Loreleyn F. Flores Escalante ◽

Jorge Andrés Guerra Torres ◽

Rolf Grieseler ◽

Thomas Kups ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thermal Processing ◽

Rapid Thermal Processing ◽

Radio Frequency Magnetron ◽

Luminescence Properties ◽

Aluminum Oxynitride ◽

Radio Frequency Magnetron Sputtering ◽

X Ray

Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.

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Study of the Capacitive Properties of Strontium Barium Niobate Deposited by Radio Frequency Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.941-944.1306 ◽

2014 ◽

Vol 941-944 ◽

pp. 1306-1310

Author(s):

Sheng Chien Su ◽

Wen Chung Chang ◽

Chia Ching Wu

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Amorphous Structure ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

X Ray Diffraction ◽

X Ray ◽

Capacitive Properties ◽

Capacitance Voltage

Ferroelectric SrxBa1−xNb2O6 (SBN) thin films are deposited on Al/Si (100) substrates by radio frequency magnetron sputtering at room temperature. The nanograin sizes of the SBN thin films were analized by scanning electron microscopy (SEM). X-ray diffraction reveals that all the SBN thin films show an amorphous structure because they were deposited at room temperature.The capacitive properties of the SBN thin films were measured using metal ferroelectric insulation semiconductor (MFIS) structures. The memory window of the MFIS structure was characterized with a capacitance-voltage (C-V) method.

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Research on Annealing Temperature of SiO2 on Si Substrate

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.311-313.1258 ◽

2011 ◽

Vol 311-313 ◽

pp. 1258-1261

Author(s):

Hao Lv ◽

Yao Ming Ding ◽

Ai Mei Liu ◽

Ju Fang Tong ◽

Xu Nong Yi ◽

...

Keyword(s):

Magnetron Sputtering ◽

Silicon Dioxide ◽

Radio Frequency ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Single Crystal Silicon ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

Crystal Silicon ◽

X Ray

Silicon dioxide films; radio-frequency magnetron sputtering; annealing temperature Abstract. Silicon dioxide (SiO2) films are fabricated on single crystal silicon substrate by radio-frequency magnetron sputtering (RFMS) technique and annealed in electric furnaces at 800°C and 1180°C to form uniform, transparent and compact silica. The surface morphology and roughness of the films are characterized by an atomic force microscopy (AFM). X-ray diffraction (XRD) is employed to analyze the crystalline of the thin films. The chemical composition after annealing is analyzed using X-ray photoelectron spectroscopy (XPS).

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Gas flow effects on the structure and composition of SiNx/Si/SiNx films prepared by radio-frequency magnetron sputtering

Journal of Materials Research ◽

10.1557/jmr.2001.0047 ◽

2001 ◽

Vol 16 (1) ◽

pp. 308-313 ◽

Cited By ~ 5

Author(s):

Wentao Xu ◽

Boquan Li ◽

Toshiyuki Fujimoto ◽

Isao Kojima

Keyword(s):

Silicon Nitride ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Gas Flow ◽

Radio Frequency Magnetron ◽

Nitrogen Flow ◽

Radio Frequency Magnetron Sputtering ◽

X Ray ◽

Silicon Nitride Films ◽

Argon Flow

The structure and composition of SiNx/Si/SiNx films were investigated by means of x-ray reflectivity, x-ray photoelectron spectroscopy, and atomic force microscopy. The three-layer films were prepared by radio-frequency magnetron sputtering under the condition of constant nitrogen flow and the argon flow. It was found that the deposition rate and surface structure of the silicon nitride films were mainly determined by the nitrogen flow rather than the argon flow. But the composition of the silicon nitride films was controlled by the gas flow ratio (FAr/FN2) used during sputtering.

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Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering

Nanomaterials ◽

10.3390/nano8080590 ◽

2018 ◽

Vol 8 (8) ◽

pp. 590 ◽

Cited By ~ 9

Author(s):

Wei Zhong ◽

Sunbin Deng ◽

Kai Wang ◽

Guijun Li ◽

Guoyuan Li ◽

...

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Photoelectron Spectroscopy ◽

Radio Frequency Magnetron ◽

Growth Strategy ◽

Radio Frequency Magnetron Sputtering ◽

Large Area ◽

X Ray ◽

Sputtering Power ◽

Mos2 Film

In this article, we report continuous and large-area molybdenum disulfide (MoS2) growth on a SiO2/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS2 film was synthesized using a two-step method. In the first step, a thin MoS2 film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS2 film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS2 by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS2 are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS2 layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS2 on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.

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Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Journal of Nanomaterials ◽

10.1155/2015/681242 ◽

2015 ◽

Vol 2015 ◽

pp. 1-20 ◽

Cited By ~ 7

Author(s):

Alireza Samavati ◽

M. K. Mustafa ◽

Z. Othaman ◽

S. K. Ghoshal

Keyword(s):

Optical Properties ◽

Surface Morphology ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Growth Parameters ◽

Radio Frequency Magnetron ◽

High Deposition Rate ◽

Radio Frequency Magnetron Sputtering ◽

Comprehensive Investigation ◽

X Ray

The comprehensive investigation of the effect of growth parameters on structural and optical properties of Si-based single layer Ge nanoislands grown via Stranski-Krastanov mechanism employing radio frequency magnetron sputtering due to its high deposition rate, easy procedure, economical cost, and safety is carried out. The estimated width and height of Ge nanoislands produced by this technique are in the range of ∼8 to ∼30 and ∼2 to 8 nm, respectively. Varieties parameters are manipulated to optimize the surface morphology and structural and optical behavior of Ge nanoislands. The resulted nanoislands are analyzed using various analytical techniques including atomic force microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, room temperature photoluminescence, and Raman spectroscopy. The optimum parameters for growing high quality samples having high number density and homogenous and small size distribution are found to be 400°C for substrate temperature, 300 sec for deposition time, 10 sccm for Ar flow, and 100 W for radio frequency power. The excellent features of the results suggest that our systematic investigation on the organized growth factors and their effects on surface parameters and photoluminescence emission energy may constitute a basis for the tunable growth of Ge nanoislands (100) nanoislands suitable in nanophotonics.

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