scholarly journals Kinetic Aspects of Phosphorus Removal from Electromagnetically Levitated 600 MPa Steel Droplets

Metals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1460
Author(s):  
Qi Jiang ◽  
Guifang Zhang ◽  
Yindong Yang ◽  
Alexander McLean ◽  
Lei Gao

A kinetic model was developed to study the dephosphorization of 600 MPa steel droplets under electromagnetic levitation conditions. The relationships which were derived from the model between dephosphorization and the influence of temperature and gas flow rate were in good agreement with experimental data. Both temperature and gas flow rate were conducive to the evaporation of phosphorus, with the effect of temperature having a greater influence than that of the gas velocity. The results show that the rate-controlling step for the dephosphorization process was diffusion within the gas phase. This work aims to provide a theoretical basis for process optimization during the dephosphorization of 600 MPa steel.

2010 ◽  
Vol 157 (2-3) ◽  
pp. 339-347 ◽  
Author(s):  
Marilou M. Nabatilan ◽  
Ameziane Harhad ◽  
Peter R. Wolenski ◽  
William M. Moe

2020 ◽  
Vol 9 ◽  
pp. 100387
Author(s):  
Divya Baskaran ◽  
Ravi Rajamanickam ◽  
Baskaran Vaidyalingam
Keyword(s):  
Gas Flow ◽  

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 2084
Author(s):  
Rana Sabouni Tabari ◽  
Mohammad Halali ◽  
Akbar A. Javadi ◽  
Mohammad Hassan Khanjanpour

The production of high-purity aluminum nanoparticles (Al-NPs) is challenging due to the highly reactive nature of Al metals. Electromagnetic levitation gas condensation (ELGC) is a promising method to produce high-purity metallic particles as it avoids the interaction between molten metal and refractory-lined, which guarantees the removal of impurities such as oxygen (O). In this research, high-purity Al-NPs were successfully fabricated via ELGC process and fully characterized. The effects of power input and gas flow rate on particle size and distribution were analyzed using field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), and dynamic light scattering (DLS). The results showed that the Al-NPs have spherical morphologies with an average diameter of 17 nm and size distribution of NPs is narrow under helium (He) flow rate of 15 L/min at a constant temperature of 1683 ± 10 K. The purity of the NPs was confirmed by utilizing X-ray diffraction (XRD), atomic absorption spectroscopy (AAS), and X-ray fluorescence (XRF). Finally, metal purity of 99.976% and 99.97% was measured by AAS and XRF analyses, respectively. Moreover, it was found that increasing gas flow rate and sample temperature results in a decrease in the particle size. The particle sizes for the Al-NPs obtained under He atmosphere were smaller than those obtained under Ar atmosphere.


2018 ◽  
Vol 248 ◽  
pp. 28-35 ◽  
Author(s):  
Eldon R. Rene ◽  
Natalia Sergienko ◽  
Torsha Goswami ◽  
M. Estefanía López ◽  
Gopalakrishnan Kumar ◽  
...  
Keyword(s):  
Gas Flow ◽  

2017 ◽  
Vol 19 (10) ◽  
pp. 7420-7430 ◽  
Author(s):  
Ho-Il Ji ◽  
Timothy C. Davenport ◽  
Michael J. Ignatowich ◽  
Sossina M. Haile

The rate of response of CeO2−δ to changes in gas composition can be systematically manipulated via changes to gas flow rate or material specific surface area.


2017 ◽  
Vol 14 (28) ◽  
pp. 120-129
Author(s):  
Oman ZUAS

System suitability testing of a GC is essential to verify its suitability for intended application. The GC always uses a carrier gas and column temperature, which may impact on its suitability parameters. This study is aimed to evaluate the effects of carrier gas flow rate (FLRT) and column temperature (CLTP) on the system suitability parameters (SSP) of GC-ECD for SF6 measurement such as retention time/tR, response factor/RF, theoretical plate numbers/N, and asymmetric factor/As. The evaluation was conducted by carefully profiling the SF6 chromatogram and the data obtained were used to calculate the tR, RF, N, and As values. It was found that the tR increases linearly (R2 = 0.9978) by increasing the FLRT, but decreases linearly (R2 = 0.9991) by increasing the CLTP. The RF decreases linearly (R2 = 0.9939) by increasing the FLRT. Interestingly, the RF was affected by the CLTP with 2nd polynomial order trend (R2 = 0.9949). The N increases linearly (R2 = 0.9404) by increasing the FLRT but the N was affected b the CLTP with 2nd polynomial order trend (R2 = 0.9769). The As was found to increase slightly with FLRT (R2 = 0.1288), while the As was affected by the CT with 2nd polynomial order trend (R2 = 0.9778). These results are in a good agreement with previous SSP studies.


2014 ◽  
Vol 878 ◽  
pp. 731-738 ◽  
Author(s):  
Si Hong Bai ◽  
Zhi Fu Qi ◽  
Jie Liu ◽  
Tong Chen ◽  
Sheng Yong Lu ◽  
...  

A real PCBs contaminated soil was heated at 500°C using pure nitrogen as carrier gas under different flow rate to investigate the influence of carrier gas flow rate on the thermal desorption process. After 1 hour thermal treatment, the residual PCBs in soil decreased and the removal efficiency (RE) of PCBs is up to 95.1%. The distributions of PCBs in soil under different flow rate were identical. The World Health Organization toxic equivalency quantity (WHO TEQ) of PCBs in soil got its lowest value at 400Nml/min. Tetra-and higher chlorinated PCBs desorbed to carrier gas increased with increased flow rate, while the total amount of PCBs, Tri-and lower chlorinated PCBs first increased then decreased. The distributions of PCBs in carrier gas became more closely to the raw soil with increased flow rate. The TEQ of PCBs in carrier gas increased with increased flow rate. Increased flow rate enhanced the mass transfer of PCBs in the soil but shortened the preheating time of carrier gas and the retention time of carries gas, weakening the mass transfer and degradation process in gas phase. The RE of WHO TEQ of PCDDs in treated soil decreased from 86.7% to 83.2% with increased flow rate while the RE of WHO TEQ of PCDFs decreased from 85.4% to 70.0%. After thermal treatment process, the total amount of PCDD/Fs TEQ in soil and carrier gas increase from 43.8% to 18.6% times of that in raw soil. Considering removal efficiency of PCBs and PCDD/Fs and generation of PCDD/Fs in soil and gas phase, an optimized flow rate should be set at about 400Nml/min.


2014 ◽  
Vol 763 ◽  
pp. 166-201 ◽  
Author(s):  
Rajagopal Vellingiri ◽  
Dmitri Tseluiko ◽  
Serafim Kalliadasis

AbstractWe consider a thin liquid film flowing down an inclined plate in the presence of a counter-current turbulent gas. By making appropriate assumptions, Tseluiko & Kalliadasis (J. Fluid Mech., vol. 673, 2011, pp. 19–59) developed low-dimensional non-local models for the liquid problem, namely a long-wave (LW) model and a weighted integral-boundary-layer (WIBL) model, which incorporate the effect of the turbulent gas. By utilising these models, along with the Orr–Sommerfeld problem formulated using the full governing equations for the liquid phase and associated boundary conditions, we explore the linear stability of the gas–liquid system. In addition, we devise a generalised methodology to investigate absolute and convective instabilities in the non-local equations describing the gas–liquid flow. We observe that at low gas flow rates, the system is convectively unstable with the localised disturbances being convected downwards. As the gas flow rate is increased, the instability becomes absolute and localised disturbances spread across the whole domain. As the gas flow rate is further increased, the system again becomes convectively unstable with the localised disturbances propagating upwards. We find that the upper limit of the absolute instability region is close to the ‘flooding’ point associated with the appearance of large-amplitude standing waves, as obtained in Tseluiko & Kalliadasis (J. Fluid Mech., vol. 673, 2011, pp. 19–59), and our analysis can therefore be used to predict the onset of flooding. We also find that an increase in the angle of inclination of the channel requires an increased gas flow rate for the onset of absolute instability. We generally find good agreement between the results obtained using the full equations and the reduced models. Moreover, we find that the WIBL model generally provides better agreement with the results for the full equations than the LW model. Such an analysis is important for an understanding of the ranges of validity of the reduced model equations. In addition, a comparison of our theoretical predictions with the experiments of Zapke & Kröger (Intl J. Multiphase Flow, vol. 26, 2000, pp. 1439–1455) shows a fairly good agreement. We supplement our stability analysis with time-dependent computations of the linearised WIBL model. To provide some insight into the mechanisms of instability, we perform an energy budget analysis.


Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7532
Author(s):  
Botao Song ◽  
Bing Gao ◽  
Pengfei Han ◽  
Yue Yu ◽  
Xia Tang

Methyltrichlorosilane (CH3SiCl3, MTS) has good performance in stoichiometric silicon carbide (SiC) deposition and can be facilitated at relatively lower temperature. Simulations of the chemical vapor deposition in the two-dimensional horizontal hot-wall reactor for epitaxial processes of SiC, which were prepared from MTS-H2 gaseous system, were performed in this work by using the finite element method. The chemistry kinetic model of gas-phase reactions employed in this work was proposed by other researchers. The total gas flow rate, temperature, and ratio of MTS/H2 were the main process parameters in this work, and their effects on consumption rate of MTS, molar fraction of intermediate species and C/Si ratio inside the hot reaction chamber were analyzed in detail. The phenomena of our simulations are interesting. Both low total gas flow rate and high substrate temperature have obvious effectiveness on increasing the consumption rate of MTS. For all cases, the highest three C contained intermediates are CH4, C2H4 and C2H2, respectively, while the highest three Si/Cl contained intermediates are SiCl2, SiCl4 and HCl, respectively. Furthermore, low total gas flow results in a uniform C/Si ratio at different temperatures, and reducing the ratio of MTS/H2 is an interesting way to raise the C/Si ratio in the reactor.


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