scholarly journals Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 454 ◽  
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Microelectromechanical Systems ◽  
Wafer Level ◽  
Vacuum Sealing ◽  
Wafer Scale ◽  
Au Thin Films

Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15–500 nm) and surface roughness (0.3–1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-square surface roughness and grain size of sputtered Au thin films on Si and glass wafers increased with the film thickness. The bonded area was more than 85% of the total wafer area when the film thickness was 100 nm or less and decreased as the thickness increased. Room-temperature wafer-scale vacuum sealing was achieved when Au thin films with a thickness of 50 nm or less were used. These results suggest that Au-Au SAB using ultrathin Au films is useful in achieving room-temperature wafer-level hermetic and vacuum packaging of microelectromechanical systems and optoelectronic devices.

Room-Temperature Wafer Bonding Using Smooth Au Thin Films for Integrated Plasmonic Devices

2018 ◽  
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Thin Films ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Au Thin Films

Growth Front Roughening of Room Temperature Deposited Oligomer Thin Films

2000 ◽  
Vol 648 ◽  
Author(s):  
D. Tsamouras ◽  
G. Palasantzas ◽  
J. Th. M. De Hosson ◽  
G. Hadziioannou
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Growth Front ◽  
Silicon Substrates ◽  
Height Distribution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Amplitude ◽  
Non Gaussian

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.

UPS, XPS, AES STUDIES OF Te THIN FILMS DEPOSITED ON Si(100) 2×1

1994 ◽  
Vol 01 (04) ◽  
pp. 589-592 ◽  
Author(s):  
S. DI NARDO ◽  
L. LOZZI ◽  
M. PASSACANTANDO ◽  
P. PICOZZI ◽  
S. SANTUCCI
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electronic Properties ◽  
Valence Band ◽  
Room Temperature ◽  
Surface States ◽  
Growth Mode ◽  
Characteristic Behavior ◽  
Complete Study ◽  
Nominal Coverage

This work represents the first complete study of the interaction between Te and Si in very thin films of tellurium grown at room temperature on Si(100) 2×1 surfaces. In particular, the electronic properties have been investigated by UPS and XPS measurements and information on growth of tellurium on silicon have been obtained by AES measurements. Our results indicate that the interaction between tellurium and silicon is weak, taking the characteristic behavior of simple metals. Increasing the film thickness, the growth mode is one layer, completed with about 2 Å of Te nominal coverage, plus islanding, until the thickness reaches the value of about 10 Å, followed by coalescence of islands. When tellurium has completed a layer, the valence band surface states of silicon are quenched.

ELECTRICAL RESISTIVITY OF NANOSTRUCTURED PLATINUM AND GOLD THIN FILMS

2004 ◽  
Vol 11 (02) ◽  
pp. 223-227 ◽  
Author(s):  
M. C. SALVADORI ◽  
A. R. VAZ ◽  
R. J. C. FARIAS ◽  
M. CATTANI
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Surface Roughness ◽  
Electrical Resistivity ◽  
Room Temperature ◽  
Theoretical Estimate ◽  
Vacuum Arc ◽  
Arc Plasma ◽  
Correlation Lengths ◽  
Gold Thin Films

We have measured, at room temperature, the resistivity, the surface roughness and the lateral surface correlation lengths of nanostructured platinum and gold thin films. The films' thickness d, deposited by vacuum arc plasma, is in the range 1.31≤d≤11.66 nm for platinum and 1.77≤d≤10.46 nm for gold. A theoretical estimate of our experimental data has been made.

scholarly journals Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films

IUCrJ ◽  
2020 ◽  
Vol 7 (1) ◽  
pp. 49-57 ◽  
Author(s):  
Nan Wang ◽  
Yu-Xiang Dai ◽  
Tian-Lin Wang ◽  
Hua-Zhe Yang ◽  
Yang Qi
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Single Crystal ◽  
Growth Characteristics ◽  
Metallic Surface ◽  
Zone Model ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Zone Ii

The preferred orientation growth characteristics and surface roughness of polycrystalline bismuth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in detail and the polycrystalline metal film structure-zone model (SZM) was modified to fit the polycrystalline Bi thin film. The boundary temperature between Zone T and Zone II in the SZM shifted to higher temperatures with the increase in film thickness or the decrease of growth rate. Furthermore, the effect of the thickness and surface roughness on the transport properties was investigated, especially for Bi thin films in Zone II. A two-transport channels model was adopted to reveal the influence of the film thickness on the competition between the metallic surface states and the semiconducting bulk states, which is consistent with the results of Bi single-crystal films. Therefore, the polycrystalline Bi thin films are expected to replace the single-crystal films in the application of spintronic devices.

scholarly journals The Effect of Film Thickness on the Structural Properties of Vacuum Evaporated Poly(3-methylthiophene) Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Sandip V. Kamat ◽  
Vijaya Puri ◽  
R. K. Puri
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Film Thickness ◽  
Structural Properties ◽  
Vacuum Evaporation ◽  
Intrinsic Stress ◽  
Glass Substrates ◽  
Structure Surface

This paper reports on the structural properties of poly(3-methylthiophene) P3MeT thin films prepared by vacuum evaporation on the glass substrates. The structural and surface morphology, wettability, adhesion, and intrinsic stress of these thin films were studied for three different thicknesses. The variation of the film thickness affects the structure, surface, and mechanical properties of P3MeT thin films. Vapor chopping also strongly influences the surface morphology, surface roughness, and wettability of the thin films. It was found that there is a decrease in the intrinsic stress and (RMS) roughness, while the adhesion increases with increase in film thickness.

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