Nanoindentation of Bi2Se3 Thin Films

The nanomechanical properties and nanoindentation responses of bismuth selenide (Bi2Se3) thin films are investigated in this study. The Bi2Se3 thin films are deposited on c-plane sapphire substrates using pulsed laser deposition. The microstructural properties of Bi2Se3 thin films are analyzed by means of X-ray diffraction (XRD). The XRD results indicated that Bi2Se3 thin films are exhibited the hexagonal crystal structure with a c-axis preferred growth orientation. Nanoindentation results showed the multiple “pop-ins” displayed in the loading segments of the load-displacement curves, suggesting that the deformation mechanisms in the hexagonal-structured Bi2Se3 films might have been governed by the nucleation and propagation of dislocations. Further, an energetic estimation of nanoindentation-induced dislocation associated with the observed pop-in effects was made using the classical dislocation theory.

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Interpretation of the two-components observed in high resolution X-ray diffraction ω scan peaks for mosaic ZnO thin films grown on c-sapphire substrates using pulsed laser deposition

Thin Solid Films ◽

10.1016/j.tsf.2011.04.036 ◽

2011 ◽

Vol 519 (19) ◽

pp. 6369-6373 ◽

Cited By ~ 16

Author(s):

O. Durand ◽

A. Letoublon ◽

D.J. Rogers ◽

F. Hosseini Teherani

Keyword(s):

Thin Films ◽

High Resolution ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Sapphire Substrates

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Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

MRS Advances ◽

10.1557/adv.2016.142 ◽

2016 ◽

Vol 1 (22) ◽

pp. 1631-1636 ◽

Cited By ~ 2

Author(s):

Boya Cui ◽

D. Bruce Buchholz ◽

Li Zeng ◽

Michael Bedzyk ◽

Robert P. H. Chang ◽

...

Keyword(s):

Thin Films ◽

Thermal Conductivity ◽

Room Temperature ◽

Storage Time ◽

Laser Deposition ◽

Low Oxygen ◽

X Ray Diffraction ◽

3Ω Method ◽

X Ray

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

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Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.123-125.375 ◽

2010 ◽

Vol 123-125 ◽

pp. 375-378 ◽

Cited By ~ 3

Author(s):

Ram Prakash ◽

Shalendra Kumar ◽

Chan Gyu Lee ◽

S.K. Sharma ◽

Marcelo Knobel ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Single Phase ◽

Pulsed Laser ◽

Laser Deposition ◽

Fe Doping ◽

Full Width ◽

Deposition Technique ◽

X Ray Diffraction ◽

X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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New Ternary Compounds of the Composition Cu2SnTi3 and Their Crystal Structures

Applied Sciences ◽

10.3390/app10248776 ◽

2020 ◽

Vol 10 (24) ◽

pp. 8776

Author(s):

Sheng-Fang Huang ◽

Yen-Cheng Chang ◽

Po-Liang Liu

Keyword(s):

Crystal Structure ◽

Total Energy ◽

Ternary Compound ◽

Density Functional ◽

Hexagonal Crystal Structure ◽

X Ray Diffraction ◽

Hexagonal Crystal ◽

Orthorhombic Crystal Structure ◽

X Ray ◽

Atomic Structures

A new ternary compound Cu2SnTi3 has been synthesized by vacuum sintering at 900 °C. The atomic structures of CaCu5- and InNi2-like Cu2SnTi3 are calculated using density functional theory methods. The X-ray diffraction (XRD) analysis and selected area diffraction (SAD) patterns of the new ternary compound Cu2SnTi3 are considered to verify the atomic structures of CaCu5- and InNi2-like Cu2SnTi3. The results reveal that the InNi2-like Cu2SnTi3 model has the lowest total energy of −35.239 eV, representing the trigonal crystal structure. The orthorhombic crystal structure of the CaCu5-like Cu2SnTi3 model has the second lowest total energy of −33.926 eV. Our theoretical X-ray diffraction peak profiles of InNi2-like (CaCu5-like) Cu2SnTi3 are nearly identical to experimental one, leading to an error below 2.0% (3.0%). In addition, the hexagonal crystal structure of the CaCu5-like Cu2SnTi3 model has the highest total energy of −33.094 eV. The stability of the Cu2SnTi3 in terms of energy follows the order: the trigonal, orthorhombic, and hexagonal crystal structure.

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Terahertz Transmission Properties of VO2 Thin Films Deposited on c-and m-Plane Sapphire Substrates by Pulsed Laser Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.710.25 ◽

2013 ◽

Vol 710 ◽

pp. 25-28 ◽

Cited By ~ 1

Author(s):

Xiao Qiang Kou ◽

Ji Ming Bian ◽

Zhi Kun Zhang

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Terahertz Time Domain Spectroscopy ◽

Transmission Properties ◽

Sapphire Substrates ◽

Dense Distribution ◽

Terahertz Transmission

Vanadium dioxide (VO2) films were grown on c-and m-plane sapphire substrates by pulsed laser deposition (PLD) technique with VO2ceramic target. The VO2films with preferred growth orientation and uniform dense distribution have been achieved on both substrates, as confirmed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The terahertz (THz) transmission properties of VO2thin films were studied by terahertz time-domain spectroscopy (THz-TDS). The results indicate that the THz transmission properties of VO2films are strongly influenced by the sapphire substrate orientation, suggesting that VO2films are ideal material candidates for THz modulation.

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CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

International Journal of Modern Physics B ◽

10.1142/s0217979205028980 ◽

2005 ◽

Vol 19 (01n03) ◽

pp. 533-535

Author(s):

J. H. HAO ◽

J. GAO

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Perovskite Oxide ◽

Deposition Technique ◽

X Ray Diffraction ◽

Rocking Curve ◽

X Ray ◽

Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

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Characterization of Zn0.96Al0.02Ga0.02O Thermoelectric Material

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.802.227 ◽

2013 ◽

Vol 802 ◽

pp. 227-231

Author(s):

Panida Pilasuta ◽

Pennapa Muthitamongkol ◽

Chanchana Thanachayanont ◽

Tosawat Seetawan

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

Single Phase ◽

Hexagonal Structure ◽

Hexagonal Crystal Structure ◽

X Ray Diffraction ◽

Hexagonal Crystal ◽

X Ray ◽

Transmission Electron

Crystal structure of Zn0.96Al0.02Ga0.02O was analyzed by X-Ray diffraction (XRD) technique and the microstructure was observed by scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The XRD results showed single phase and hexagonal structure a = b = 3.24982 Å, and c = 5.20661 Å. The SEM and TEM results showed the grain size of material arrangement changed after sintering and TEM diffraction pattern confirmed hexagonal crystal structure of Zn0.96Al0.02Ga0.02O after sintering.

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Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.29-32.1913 ◽

2010 ◽

Vol 29-32 ◽

pp. 1913-1918

Author(s):

Xia Zhang ◽

Hong Chen ◽

Qiu Hui Liao ◽

Xia Li

Keyword(s):

Thin Films ◽

State Of The Art ◽

Pulsed Laser ◽

Buffer Layers ◽

Laser Deposition ◽

X Ray Diffraction ◽

High Quality ◽

X Ray ◽

Current State ◽

Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

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Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

MRS Proceedings ◽

10.1557/opl.2011.245 ◽

2011 ◽

Vol 1292 ◽

Cited By ~ 3

Author(s):

Nobuyuki Iwata ◽

Mark Huijben ◽

Guus Rijnders ◽

Hiroshi Yamamoto ◽

Dave H. A. Blank

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Layer Growth ◽

Laser Deposition ◽

Growth Mode ◽

Layer By Layer ◽

X Ray Diffraction ◽

Reciprocal Space Mapping ◽

X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

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