scholarly journals First-Principles Study of Bi-Doping Effects in Hg0.75Cd0.25Te

Molecules ◽  
2021 ◽  
Vol 26 (16) ◽  
pp. 4847
Author(s):  
Xueli Sun ◽  
Xuejun Su ◽  
Dechun Li ◽  
Lihua Cao
Keyword(s):  
Charge Density ◽  
First Principles ◽  
Density Functional ◽  
Substitution Effect ◽  
Computational Method ◽  
Hybrid Functional ◽  
Band Structures ◽  
Group V ◽  
Charge Densities ◽  
Bi Doping

First-principles calculations based on density functional theory have been performed for exploring the structural and electronic properties of Bi-doped Hg0.75Cd0.25Te (MCT), using the state-of-the-art computational method with the Heyd–Scuseria–Ernzerhof (HSE) of hybrid functional to correct the band gap. Structural relaxations, charge densities, electron localization functions (ELFs), density of states (DOSs), band structures, and band decomposed charge density were obtained to reveal the amphoteric behavior of Bi in Hg0.75Cd0.25Te. The bonding characteristics between Bi and host atoms were discussed by analyzing charge densities and ELFs. The influence of Bi impurity on the electronic structure of Bi-doped Hg0.75Cd0.25Te was also analyzed by the calculated DOSs, band structures, and the band decomposed charge density of the defect band. It has been demonstrated that Bi can show a typical amphoteric substitution effect of group V elements.

scholarly journals Doping anatase TiO2 with group V-b and VI-b transition metal atoms: a hybrid functional first-principles study

2017 ◽  
Vol 19 (3) ◽  
pp. 1945-1952 ◽  
Author(s):  
Masahiko Matsubara ◽  
Rolando Saniz ◽  
Bart Partoens ◽  
Dirk Lamoen
Keyword(s):  
Transition Metal ◽  
First Principles ◽  
Density Functional ◽  
Hybrid Functional ◽  
Functional Theory ◽  
Group V ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
P Type

We investigate the role of transition metal atoms of group V-b (V, Nb, and Ta) and VI-b (Cr, Mo, and W) as n- or p-type dopants in anatase TiO2 using thermodynamic principles and density functional theory with the HSE06 hybrid functional.

First-principles investigation of the electronic band structures and optical properties of quaternary ABaMQ4 (A = Rb, Cs; M = P, V; and Q = S) metal chalcogenides

2018 ◽  
Vol 32 (30) ◽  
pp. 1850337
Author(s):  
Shahid Ullah ◽  
Hayat Ullah ◽  
Abdullah Yar ◽  
Sikander Azam ◽  
A. Laref
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Correlation Energy ◽  
Electronic Charge ◽  
Electromagnetic Spectrum ◽  
Metal Chalcogenides ◽  
Electronic Band ◽  
Charge Densities ◽  
Electronic Band Structures

In this paper, we study the optoelectronic properties of quaternary metal chalcogenide semiconductor ABaMQ4 (A = Rb, Cs; M = P, V; and Q = S) compounds using state-of-the-art density functional theory (DFT) with TB-mBJ approximation for the treatment of exchange-correlation energy. In particular, the electronic and optical properties of the relaxed geometries of these compounds are investigated. Our first-principles ab-initio calculations show that the CsBaPS4 and RbBaPS4 compounds have direct bandgaps whereas the CsBaVS4 compound exhibits indirect bandgap nature. Importantly, the theoretically calculated values of the bandgaps of the compounds are consistent with experiment. Furthermore, our analysis of the electronic charge densities of these compounds indicates that the above quaternary chalcogenides have mixed covalent and ionic bonding characters. The effective masses of these compounds are also calculated which provide very useful information about the band structure and transport characteristics of the investigated compounds. Similarly, high absorptivity in the visible and ultraviolet regions of the electromagnetic spectrum possibly predicts and indicates the importance of these materials for potential optoelectronic applications in this range.

scholarly journals First-Principles Calculation of Conductivity of Ce-C Codoped SnO2 Contacts

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Can Ding ◽  
Zhenjiang Gao ◽  
Xing Hu ◽  
Zhao Yuan
Keyword(s):  
Charge Density ◽  
Lattice Constant ◽  
First Principles ◽  
Density Functional ◽  
Energy Levels ◽  
Circuit Breaker ◽  
Enthalpy Change ◽  
First Principles Calculation ◽  
Contact Material ◽  
Electronic Density

The contact is the core element of the vacuum interrupter of the mechanical DC circuit breaker. The electrical conductivity and welding resistance of the material directly affect its stability and reliability. AgSnO2 contact material has low resistivity, welding resistance, and so on. This material occupies an important position of the circuit breaker contact material. This research is based on the first-principles analysis method of density functional theory. The article calculated the lattice constant, enthalpy change, energy band, electronic density of state, charge density distribution, population, and conductivity of Ce, C single-doped, and Ce-C codoped SnO2 systems. The results show that Ce, C single doping, and Ce-C codoping all increase the cell volume and lattice constant. When the elements are codoped, the enthalpy change is the largest, and the thermal stability is the best. It has the smallest bandgap, the most impurity energy levels, and the least energy required for electronic transitions. The 4f orbital electrons of the Ce atom and the 2p orbital electrons of C are the sources of impurity energy near the Fermi level. When the elements are codoped, more impurity energy levels are generated at the bottom of the conduction band and the top of the valence band. Its bandgap is reduced so conductivity is improved. From the charge density and population analysis, the number of free electrons of Ce atoms and C atoms is redistributed after codoping. It forms a Ce-C covalent bond to further increase the degree of commonality of electrons and enhance the metallicity. The conductivity analysis shows that both single-doped and codoped conductivity have been improved. When the elements are codoped, the conductivity is the largest, and the conductivity is the best.

The adsorption of nitrogen oxides on noble metal-doped graphene: The first-principles study

2019 ◽  
Vol 33 (04) ◽  
pp. 1950044 ◽  
Author(s):  
X. Jia ◽  
L. An
Keyword(s):  
Gas Sensors ◽  
First Principles ◽  
Density Functional ◽  
Noble Metals ◽  
Functional Theory ◽  
Adsorption Effect ◽  
Charge Densities ◽  
Adsorption Of Nitrogen ◽  
Doped Graphene ◽  
Metal Doped

The first-principles method based on density functional theory has been used to investigate the adsorption performance of NO/NO2 molecules on intrinsic, Ag-doped, Pt-doped and Au-doped graphene. Results show that graphene doped with Ag/Pt/Au has shorter final adsorption distance, larger adsorption energy and charge transfer amount with NO/NO2 molecules than intrinsic graphene, and the charge densities of doped graphene and NO/NO2 molecules overlap effectively. Therefore, doping graphene with noble metals can greatly enhance the adsorption between graphene and NO/NO2 molecules. Analysis also reveals that Au-doped graphene has the strongest adsorption effect on NO/NO2 molecules, followed by Ag-doped graphene, while Pt-doped graphene has the weakest role on the adsorption of NO/NO2 molecules. The work conducted in this research provides a theoretical guidance for the application of NO/NO2 gas sensors based on graphene.

Hybrid functional calculations of electronic and thermoelectric properties of GaS, GaSe, and GaTe monolayers

2018 ◽  
Vol 20 (45) ◽  
pp. 28575-28582 ◽  
Author(s):  
Bhagwati Prasad Bahuguna ◽  
L. K. Saini ◽  
Rajesh O. Sharma ◽  
Brajesh Tiwari
Keyword(s):  
Density Functional Theory ◽  
Transport Equation ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Density Functional ◽  
Boltzmann Transport Equation ◽  
Boltzmann Transport ◽  
Hybrid Functional ◽  
Functional Theory

We have investigated the structural, electronic and thermoelectric properties of GaS, GaSe and GaTe monolayers based on the first-principles approach by using density functional theory and the semi-classical Boltzmann transport equation.

scholarly journals Machine learning the Hubbard U parameter in DFT+U using Bayesian optimization

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Maituo Yu ◽  
Shuyang Yang ◽  
Chunzhi Wu ◽  
Noa Marom
Keyword(s):  
Machine Learning ◽  
Transition Metal Oxides ◽  
Density Functional ◽  
Functional Results ◽  
Bayesian Optimization ◽  
Hybrid Functional ◽  
Band Structures ◽  
Local Exchange ◽  
Functional Theory ◽  
Exchange Correlation

AbstractWithin density functional theory (DFT), adding a Hubbard U correction can mitigate some of the deficiencies of local and semi-local exchange-correlation functionals, while maintaining computational efficiency. However, the accuracy of DFT+U largely depends on the chosen Hubbard U values. We propose an approach to determining the optimal U parameters for a given material by machine learning. The Bayesian optimization (BO) algorithm is used with an objective function formulated to reproduce the band structures produced by more accurate hybrid functionals. This approach is demonstrated for transition metal oxides, europium chalcogenides, and narrow-gap semiconductors. The band structures obtained using the BO U values are in agreement with hybrid functional results. Additionally, comparison to the linear response (LR) approach to determining U demonstrates that the BO method is superior.

scholarly journals Designing an active Ta3N5 photocatalyst for H2 and O2 evolution reactions by specific exposed facet engineering: a first-principles study

2020 ◽  
Vol 22 (18) ◽  
pp. 10295-10304 ◽  
Author(s):  
Moussab Harb ◽  
Luigi Cavallo ◽  
Jean-Marie Basset
Keyword(s):  
Density Functional Theory ◽  
Water Splitting ◽  
First Principles ◽  
Density Functional ◽  
O2 Evolution ◽  
Hybrid Functional ◽  
Functional Theory ◽  
Native Defects ◽  
Exposed Facet ◽  
Exposed Facets

The effects of native defects and exposed facets on the thermodynamic stability and photocatalytic characteristics of Ta3N5 for water splitting are studied by applying accurate quantum computations on the basis of density functional theory (DFT) with the range-separated hybrid functional (HSE06).

First-principle studies of the lattice dynamics of crystals, and related properties

2005 ◽  
Vol 220 (5/6) ◽  
Author(s):  
Xavier Gonze ◽  
Gian-Marco Rignanese ◽  
Razvan Caracas
Keyword(s):  
Perturbation Theory ◽  
First Principles ◽  
Lattice Dynamics ◽  
Density Functional ◽  
Computational Method ◽  
Dielectric Tensor ◽  
Atomic Temperature ◽  
Density Functional Perturbation Theory ◽  
Infra Red ◽  
Temperature Factors

AbstractThe crystal lattice is never rigid. Due to temperature, external fields or pressure, the nuclei vibrate, the lattice distorts, and instabilities can induce phase transitions. We review the basic concepts of density-functional perturbation theory, a computational method especially suited to determine from first-principles the microscopic parameters governing such behaviour. Then, we present the additional formalism leading to the following properties of minerals: the infra-red and Raman spectra; the prediction of (meta)stability or instability of a crystalline phase, based on the phonon spectrum; the computation of thermodynamics quantities like the free energy, entropy, specific heat; the atomic temperature factors. For each property, examples are given. When appropriate, we mention the computation of related properties, like dielectric tensor and Born effective charges that are needed to get infra-red spectra. Finally, we discuss briefly, on one hand, other applications of the density-functional perturbation theory, and, on the other hand, an alternative technique, the finite-difference computation of dynamical matrices.

Electronic band structures of Ge1−xSnx semiconductors: A first-principles density functional theory study

2013 ◽  
Vol 113 (6) ◽  
pp. 063517 ◽  
Author(s):  
Ming-Hsien Lee ◽  
Po-Liang Liu ◽  
Yung-An Hong ◽  
Yen-Ting Chou ◽  
Jia-Yang Hong ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
First Principles ◽  
Density Functional ◽  
Density Functional Theory Study ◽  
Band Structures ◽  
Electronic Band ◽  
Functional Theory ◽  
Electronic Band Structures

Effects of Si Doping on the Structural, Electronic and Optical Properties of Barium Chalcogenide BaS: A First-Principles Study

SPIN ◽  
2020 ◽  
Vol 10 (02) ◽  
pp. 2050014
Author(s):  
H. Absike ◽  
H. Labrim ◽  
B. Hartiti ◽  
H. Ez-Zahraouy
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Original Structure ◽  
Functional Theory ◽  
Electron Charge Density ◽  
Electronic And Optical Properties ◽  
Charge Densities ◽  
The Density Functional Theory ◽  
Si Doped

In this work, the structural, electronic and optical properties of Si-doped barium chalcogenide [barium sulfide (BaS)] with different Si concentrations ([Formula: see text]) are investigated by the first-principles calculations based on the density functional theory (DFT). The band structures, charge densities and complex dielectric functions of the pure as well as Si-doped BaS were presented and analyzed in detail using TB-mBJ approach by WIEN2k package. It is found that silicon concentration can control the bandgap by reducing it to values around 1.4[Formula: see text]eV and 1.6[Formula: see text]eV for 12.5% and 6.25% of Si-doped BaS, respectively. The electron charge density indicates the ionic bonding between silicon and sulfur atoms due to the high electronegativity between them. In fact, the results show that the absorption peaks of Si-doped BaS are enhanced compared with pure BaS. These results suggest that the Ba[Formula: see text]SixS original structure displays excellent physical properties thereby revealing that it is a promising material in advanced optoelectronic and solar cell applications.

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