scholarly journals Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 630 ◽  
Author(s):  
Quentin Micard ◽  
Guglielmo Guido Condorelli ◽  
Graziella Malandrino
Keyword(s):  
Substrate Surface ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Hybrid Energy ◽  
Energy Harvesters ◽  
Si Substrates ◽  
Piezoelectric Force Microscopy ◽  
Silicon Based

This paper presents a simple and optimized metal organic chemical vapor deposition (MOCVD) protocol for the deposition of perovskite BiFeO3 films on silicon-based substrates, in order to move toward the next generation of lead-free hybrid energy harvesters. A bi-metal mixture that is composed of Bi(phenyl)3, and Fe(tmhd)3 has been used as a precursor source. BiFeO3 films have been grown by MOCVD on IrO2/Si substrates, in which the conductive IrO2 functions as a bottom electrode and a buffer layer. BiFeO3 films have been analyzed by X-ray diffraction (XRD) for structural characterization and by field-emission scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray (EDX) analysis for the morphological and chemical characterizations, respectively. These studies have shown that the deposited films are polycrystalline, pure BiFeO3 phase highly homogenous in morphology and composition all over the entire substrate surface. Piezoelectric force microscopy (PFM) and Piezoelectric Force Spectroscopy (PFS) checked the piezoelectric and ferroelectric properties of the film.

Dynamic Film Composition Transition Phenomena in the Copper Oxide Metal Organic Chemical Vapor Deposition (MOCVD) Studied by Scanning Electron Microscopy (Sem)

1992 ◽  
Vol 280 ◽  
Author(s):  
Yu-neng Chang
Keyword(s):  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Continuous Phase ◽  
Organic Chemical ◽  
Rich Phase ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Temperature Area

ABSTRACTIn this report, the impact of deposition temperature variation on the evolution of film morphology and microstructure was studied. In the copper oxide metal organic chemical vapor deposition (MOCVD) process, a temperature gradient was created on the substrate surface. By using a specific design of the heating susceptor, the local temperature of the leading edge (upstream) on the substrate surface was maintained at 70°C lower than the temperature of the ending (downstream) edge. The evolution of local composition and microstructure in deposited films were analyzed by X-ray diffraction (XRD), transmission Fourier Transform Infrared Spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and SEM. From XPS and XRD results, Cu2O rich phase was deposited at the low temperature area, while CuO rich phase was deposited at the high temperature area. These two areas were divided by a phase intermixing (transition) zone of 40–100 ums wide. The temperature of this abrupt Cu2O->CuO deposition product transition was determined to be 390°C -400°C. As indicated by SEM results, the low temperature favorite Cu2O continuous phase, collapsed into coarse grains (with the scale of 10 urn) first, then became fine grains among channels of CuO phase, and finally diminished into the high temperature favorite CuO continuous phase. Spatially resolved XPS results also indicated that the film composition changed abruptly through the transition zone. A nucleation-growth competition mechanism, between the Cu2O rich phase and the CuO rich phase, was suggested to occur in this zone. In this model, this dynamic deposition product transition is interpreted by the temperature dependency of nucleation rates for the specific CuO phase or Cu2O phase.

Metal-Organic Chemical Vapor Deposition of BiFeO3 Based Multiferroics

2014 ◽  
Vol 90 ◽  
pp. 57-65 ◽  
Author(s):  
Maria Rita Catalano ◽  
Gugliemo Guido Condorelli ◽  
Raffaella Lo Nigro ◽  
Graziella Malandrino
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Piezoresponse Force Microscopy ◽  
Morphological Characterization ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

BiFeO3 films undoped and doped with Ba and/or Ti have been fabricated through Metal-Organic Chemical Vapor Deposition (MOCVD) on SrTiO3 (100), SrTiO3:Nb (100) and YSZ (100) substrates. Films have been deposited using a multi-metal source, consisting of the Bi (phenyl)3, Fe (tmhd)3, Ba (hfa)2•tetraglyme and Ti (tmhd)2(O-iPr)2 (phenyl= -C6H5, H-tmhd=2,2,6,6-tetramethyl-3,5-heptandione; O-iPr= iso-propoxide; H-hfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme = CH3O(CH2CH2O)4CH3) precursor mixture. The structural and morphological characterization of films has been carried out using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). Chemical compositional studies have been performed by energy dispersive X-ray (EDX) analysis. Structural and morphological characterizations point to the formation of crystalline phases and homogeneous surfaces for both undoped and doped BiFeO3 films. Piezoresponse force microscopy (PFM) and piezoresponce force spectroscopy (PFS) have been applied to study the piezoelectric and ferroelectric properties of the films.

Characterization of Pb(ScTa)1−xTixO3 (x<0.3) Thin Films Grown on LaNiO3 Coated Si by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
C. H. Lin ◽  
H. C. Kuo ◽  
G. E. Stillman ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

AbstractHighly (100) textured pseudo-cubic Pb(ScTa)1−xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650 °C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated, Furthermore, the pyroelectric properties of these thin films were estimated.

Studies on the Heterostructure of Fe Film on Si Substrate

2005 ◽  
Vol 475-479 ◽  
pp. 3753-3756
Author(s):  
Y.F. Ge ◽  
Rong Zhang ◽  
Xiang Qian Xiu ◽  
Zi Li Xie ◽  
Shu Lin Gu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Iron Film ◽  
Organic Chemical ◽  
X Ray ◽  
Si Substrates ◽  
Long Time ◽  
The Difference ◽  
Oxidation In Air

Fe films have been grown on different oriented Si substrates by metal organic chemical vapor deposition (MOCVD), and then samples are put in the air without any protection for nearly fifteen years. In this paper, using methods such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM), we make a detailed research on the samples. We identify the composition and structure of the epitaxial films on different oriented substrates and compare the difference both in composition and magnetic properties. Different orientation of the substrates results in different epitaxial film with different characteristic. We also confirm the existence of single crystal iron in the heteroepitaxial film grown on Si (001), and discuss the possible reason why the single crystal iron film still exists without complete oxidation in air for such a long time.

Ba substituted Pb(ZrxTi1-x)O3 thin films grown by MOCVD

2005 ◽  
Vol 902 ◽  
Author(s):  
Jochen Puchalla ◽  
Susanne Hoffmann-Eifert ◽  
Lorena Cattaneo ◽  
Sergio Carella ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Relative Permittivity ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Orientation Dependence ◽  
Organic Chemical ◽  
Process Conditions ◽  
Si Substrates ◽  
Pzt Films

AbstractHigh quality Pb(Zr,Ti)O3 [PZT] and (Pb1-xBax)(ZryTi1-y)O3 (x ≤ 0.15, 0.25 ≤ y ≤ 0.50) [PBZT] thin films were grown on Pt (111) and Ir (111) coated silicon substrates by means of a pulsed liquid injection metal organic chemical vapor deposition (MOCVD) technique. The precursor solutions of Pb(DPM)2, Ba(DPM)2, Zr(IBPM)4, and Ti(OiPr)2(DPM)2 dissolved in butylacetate were separately injected into an AIX-200 reactor using a TriJet™ vaporizer. Stoichiometric films (0.98 ≤ A/B ≤ 1.06) with thickness between 80 nm and 150 nm were deposited at a susceptor temperature of 615 °C to 660 °C. Pure PZT films grown on platinum coated substrates show a randomly oriented perovskite structure accompanied with formation of a PbPtx alloy at the PZT/Pt interface. On the Ir(111) coated substrates the pure PZT films also exhibit a random orientation possibly due to oxidation of the Ir surface layer during the deposition process. Ferroelectric properties of Pr = 35 µC/cm2 and Ec = 90 kV/cm were obtained for a PZT (30/70) film of 150 nm thickness grown on Ir/Si. In contrast, PBZT films with a Ba content of about 5 to 15% show lower tendency for formation of a PbPtx interfacial layer, and a preferred (111) texture was observed for PBZT films grown on the Ir (111) substrates under optimized process conditions. Tetragonal and rhombohedral PBZT films with 15% Ba and a Zr-content of about 0.35 and 0.50, respectively, show an orientation dependence of the ferroelectric properties in the way that Ec is highest for <111> textured films in comparison to Ec determined for <110> textured films. The remanent polarization of 85 nm thick tetragonal PBZT films changes from 17 µC/cm2 for <111> orientation to 13.5 µC/cm2 for <110> texture. The relative permittivity changes in the same way from 600 to 540, respectively. The rhombohedral films exhibit a nearly independent Pr value of about 11 µC/cm2 while the switching field changes from 75 kV/cm for an <111> textured film to 46 kV/cm for an (110) textured one. The relative permittivity values of both films are 890 and 715 for the (110) and the (111) textured films, respectively. The trends observed for the textured PBZT films grown on Si substrates reflect the behaviour reported for epitaxial films [2]

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

Observations on the Growth of YBa2Cu3O7 Thin Films at Very High Laser Fluences

1995 ◽  
Vol 388 ◽  
Author(s):  
Rand R. Biggers. ◽  
M. Grant Norton ◽  
I. Maartense ◽  
T.L. Peterson ◽  
E. K. Moser ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
High Fluences ◽  
Laser Fluences ◽  
High Laser ◽  
High Laser Fluences ◽  
Very High

AbstractThe pulsed-laser deposition (PLD) technique utilizes one of the most energetic beams available to form thin films of the superconducting oxide YBa2Cu3O7 (YBCO). IN this study we examine the growth of YBCO at very high laser fluences (25 to 40 J/cm2); a more typical fluence for PLD would be nearer to 3 J/cm2. the use of high fluences leads to unique film microstructures which, in some cases, appear to be related to the correspondingly higher moveabilities of the adatoms. Films grown on vicinal substrates, using high laser fluences, exhibited well-defined elongated granular morphologies (with excellent transition temperature, Tc, and critical current density, Jc). Films grown on vicinal substrates using off-axis magnetron sputtering, plasma-enhanced metal organic chemical vapor deposition (PE-MOCVD), or PLD at more typical laser fluences showed some similar morphologies, but less well-defined. Under certain growth conditions, using high laser fluences with (001) oriented substrates, the YBCO films can exhibit a mixture of a- and c-axis growth where both crystallographic orientations nucleate on the substrate surface at the same time, and grow in concert. the ratio of a-axis oriented to c-axis oriented grains is strongly affected by the pulse repetition rate of the laser.

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
C. H. Lin ◽  
B. M. Yen ◽  
Haydn Chen ◽  
T. B. Wu ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Preferential Orientation ◽  
Organic Chemical ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium

2009 ◽  
Vol 421-422 ◽  
pp. 87-90 ◽  
Author(s):  
Masaki Hirano ◽  
Kazuhisa Kawano ◽  
Hiroshi Funakubo
Keyword(s):  
Incubation Time ◽  
Deposition Temperature ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Organic Chemical ◽  
Deposition Mechanism ◽  
Deposition Amount ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The deposition mechanism of metal-Ru films including incubation time was investigated for Ru films prepared by metal organic chemical vapor deposition from (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium (DER) - O2 system. Substrates with amorphous top-layer having various Hf/Si ratio, SiO2 (native oxide)/(001)Si (SiO2), HfSiON/SiON/(001)Si (HfSiON) and HfO2/SiON/(001)Si (HfO2), were used as substrates. The deposition temperature dependence of the deposition amount at the fixed deposition time ranging from 210 oC to 300 oC revealed that the deposition amount depended on the deposition temperature below 250 oC, while it was almost constant above this temperature. Incubation time depended on the kinds of substrate at 210 oC and the substrate surface was fully covered in a shorter time with smaller deposition amount for the substrates with shorter incubation time. In addition, the film with shorter incubation time had smaller surface roughness.

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