scholarly journals Investigation of WO3 Electrodeposition Leading to Nanostructured Thin Films

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1493
Author(s):  
G. Mineo ◽  
F. Ruffino ◽  
S. Mirabella ◽  
E. Bruno
Keyword(s):  
Energy Gap ◽  
Rutherford Backscattering Spectrometry ◽  
Low Cost ◽  
Tungstic Acid ◽  
X Ray Diffraction ◽  
Cathodic Current ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gap Measurement ◽  
Instantaneous Nucleation

Nanostructured WO3 represents a promising material for electrochromic and sensing devices. In this scenario, electrodeposition is a promising low-cost approach for careful production. The electrodeposition of tungsten oxide film from a peroxo-tungstic-acid (PTA) solution is investigated. WO3 is synthetized onto Indium doped Tin Oxide (ITO) substrates, in a variety of shapes, from a fragmentary, thin layer up to a thick continuous film. Samples were investigated by scanning electron (SEM) and atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS), X-ray Diffraction analysis (XRD), energy gap measurement. Electrodeposition current curves are compared with characterization results to model the growth process. Early stages of electrodeposition are characterized by a transient cathodic current revealing an instantaneous nucleation followed by a diffusion limited process. A quantitative analysis of W deposition rate and current at working electrode validates a microscopic model for WO3 electrodeposition driving the process towards nanostructured versus continuous WO3 film.

scholarly journals The effect of replacing iron atoms instead of zinc of the quaternary compound CZTS

2021 ◽  
Vol 2114 (1) ◽  
pp. 012033
Author(s):  
Abubaker.S. Mohammed
Keyword(s):  
Full Width Half Maximum ◽  
Energy Gap ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Quaternary Compound ◽  
Force Microscopy ◽  
Atomic Force ◽  
Coating Method ◽  
Degree Of Crystallization ◽  
High Degree

Abstract In this article, the quaternary compound Cu2MSnS4 was prepared in a simple and inexpensive approach, where M is the iron (Fe) and zinc (Zn) atoms by the spin coating method on a glass substrate at room temperature (RT), as a result of replacing Zn atoms by Fe. Quaternary Cu2ZnSnS4 (CZTS) and Cu2FeSrS4 (CFTS) structural and optical properties have been studied successfully. The material has been identified by X-ray diffraction, and it was discovered that CZTS has a polycrystalline Tetragonal (kesterite) structure, whereas CFTS has a Tetragonal (stannite) structure. A reduction in the full width half maximum (FWHM) of the preferred plane implies a high degree of crystallization. The structural properties of the film surface, such as grain size and roughness, were studied by Atomic force microscopy (AFM). The results explain an increase in nanoparticle size and surface roughness when Fe is substituted by Zn in the CZTS structure. The absorption coefficient values of all designed compounds in visible regions are greater than 104/cm, and the results show that the absorbance coefficient increases with Fe add. The CZTS films showed an energy gap of 1.88 eV, and this value became 1.69 eV with substituted Fe instead of Zn.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

Stress origin and relaxation in epitaxial AlN thin films on SiC

2001 ◽  
Vol 696 ◽  
Author(s):  
Ravi Bathe ◽  
R.D. Vispute ◽  
Daniel Habersat ◽  
R. P. Sharma ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Highly Strained

AbstractWe have investigated the epitaxy, surfaces, interfaces, and defects in AlN thin films grown on SiC by pulsed laser deposition. The stress origin, evolution, and relaxation in these films is reported. The crystalline structure and surface morphology of the epitaxially grown AlN thin films on SiC (0001) substrates have been studied using x-ray diffraction (θ–2θ, ω, and Ψ scans) and atomic force microscopy, respectively. The defect analysis has been carried out by using Rutherford backscattering spectrometry and ion channeling technique. The films were grown at various substrate temperatures ranging from room temperature to 1100 °C. X-ray diffraction measurements show highly oriented AlN films when grown at temperatures of 750- 800 °C, and single crystals above 800 °C. The films grown in the temperature range of 950 °C to 1000 °C have been found to be highly strained, whereas the films grown above 1000 °C were found to be cracked along the crystallographic axes. The results of stress as a function of growth temperature, thermal mismatch, growth mode, and buffer layer thickness will be presented, and the implications of these results for wide band gap power electronics will be discussed.

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure

2015 ◽  
Vol 821-823 ◽  
pp. 213-216
Author(s):  
S.M. Ryndya ◽  
N.I. Kargin ◽  
A.S. Gusev ◽  
E.P. Pavlova
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Selected Area Electron Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Influence Of Substrate ◽  
Composition Structure

Silicon carbide thin films were obtained on Si (100) and (111) substrates by means of vacuum laser ablation of α-SiC ceramic target. The influence of substrate temperature on composition, structure and surface morphology of experimental samples was examined using Rutherford backscattering spectrometry (RBS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM), atomic force microscopy (AFM), selected area electron diffraction (SAED) and X-ray diffraction (XRD) methods.

Epitaxial Batio3 and Knbo3 Thin Films On Various Substrates for Optical Waveguide Applications

1996 ◽  
Vol 441 ◽  
Author(s):  
L. Beckers ◽  
W. Zander ◽  
J. Schubert ◽  
P. Leinenbach ◽  
Ch. Buchal ◽  
...  
Keyword(s):  
Optical Materials ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Crystalline Perfection ◽  
Rocking Curve ◽  
X Ray ◽  
Flat Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Yield Values

AbstractTechnologically interesting optical materials such as BaTiO3 and KnbO3 are difficult to grow as single crystals of large dimensions. Thin film techniques can overcome this problem by synthesizing these materials on commercially available substrates. We demonstrate the deposition of single crystalline BaTiO3 and KnbO3 on MgO, SrTiO3 and buffered MgO substrates by Pulsed Laser Deposition (PLD). The samples are characterized by Rutherford Backscattering Spectrometry / Channeling (RBS/C), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM). We found excellent crystalline quality, confirmed by RBS/C minimum yield values of 2 % and a FWHM of 0.36° of the BaTiO3(002) rocking curve. Even films of a few microns thickness have been grown without loss of crystalline perfection, and all films show very flat surfaces. The RMS roughness of a 950 nm BaTiO3 film was found to be 1.1 nm.

Investigation of ZnFe2O4 Nanoparticles Prepared by High Energy Milling

2009 ◽  
Author(s):  
S. S. Srinivasan ◽  
N. Kislov ◽  
Yu. Emirov ◽  
D. Y. Goswami ◽  
E. K. Stefanakos
Keyword(s):  
Electron Microscopy ◽  
Particle Size ◽  
Energy Gap ◽  
Blue Shift ◽  
High Energy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Coefficient Estimation ◽  
Transmission Electron

Nanoparticles of Zinc Ferrite (ZnFe2O4) prepared by both wet- and dry- high-energy ball milling (HEBM), have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), surface area and pore size distribution (BET) and wavelength-dependent diffuse reflectance and scattering turned into absorption coefficient estimation using the Kubelka-Munk theory. It was found that after 72 hours of HEBM, the particle size was decreased from 220 nm for the initial material to 16.5 nm and 9.4 nm for the wet- and dry-milled samples, respectively. The optical absorption analysis revealed that the energy gap is increased (blue shift) by 0.45 eV for wet-milled and decreased (“anomalous” red shift) by 0.15 eV for dry-milled samples of ZnFe2O4 as the particle size decreased.

scholarly journals Graphene Synthesis by Ultrasound Energy Assisted Exfoliation of Graphite in Various Solvents

2020 ◽  
Author(s):  
Betül Gürünlü ◽  
Çiğdem Taşdelen-Yücedağ ◽  
Mahmut Bayramoğlu
Keyword(s):  
Low Cost ◽  
Dimethyl Formamide ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Graphene Synthesis ◽  
Atomic Force ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
Ultrasound Energy ◽  
Size And Morphology

Liquid Phase Exfoliation (LPE) method has been gaining increasing interest by academic and industrial researchers due to its simplicity, low-cost, and scalability. High intensity ultrasound energy was exploited to transform graphite to graphene in the solvents of dimethyl sulfoxide (DMSO), N,N-dimethyl formamide (DMF), and perchloric acid (PA) without any surfactants or ionic liquids. The crystal structure, number of layers, particle size, and morphology of the synthesized graphene samples were characterized by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Ultraviolet visible (UV–vis) spectroscopy, Dynamic Light Scattering (DLS), and Transmission Electron Microscopy (TEM). XRD and AFM analyses indicated that G-DMSO and G-DMF have few layers and G-PA has multilayers. The layer numbers of G-DMSO, G-DMF, and G-PA were determined as 9, 10, and 21, respectively. By DLS analysis, the particle sizes of graphene samples were estimated in a few micrometers. TEM analyses showed that G-DMSO and G-DMF possess sheet-like fewer layers and also, G-PA has wrinkled and unordered multilayers.

Preparation and Characterization of CuO Nanoparticles Prepared by Chemical Method

2021 ◽  
Vol 1021 ◽  
pp. 68-77
Author(s):  
Rashed T. Rasheed ◽  
Liblab S. Jassim ◽  
Hamsa A. Easa ◽  
Shaymaa H. Khazaal
Keyword(s):  
Annealing Temperature ◽  
Energy Gap ◽  
Copper Chloride ◽  
Sol Gel ◽  
Ammonium Hydroxide ◽  
Cuo Nanoparticles ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Temperatures

Copper oxide (CuO) nanoparticles were prepared by the sol-gel method, by the reaction of copper chloride and ammonium hydroxide as procurers. Nanopowders are annealing at different temperatures (100 °C, 200 °C, and 600 °C) for 120 min and confirmed the monoclinic phase by X-ray diffraction analysis of the metal oxide with lattice parameters a = 4.694 Å, b = 3.456 Å and c = 5.165Å for annealing temperature 400°C. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR), and UV-Visible Spectroscopy spectrum was used to determine the structure, average crystallize, and morphology. We found increasing in size and energy gap (Eg) from (62.95 nm to 106.84 nm) and from (1.72 eV to 1.49 eV), when annealing temperature increasing from 200 °C to 600 °C, respectively.

scholarly journals Studying the Effect of Annealing on Optical and Structure Properties of Zno Nanostructure Prepared by Laser Induced Plasma

2019 ◽  
pp. 2168-2176
Author(s):  
Safa Kamal Mustafa ◽  
Raied K. Jamal ◽  
Kadhim Abdulwahid Aadim
Keyword(s):  
Glass Substrate ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Laser Induced Plasma ◽  
Zno Nanostructure ◽  
Atomic Force ◽  
Uv Visible

In this paper, Zinc oxide were deposited on a glass substrate at room temperature (RT) and two annealing temperatures 350ºC and 500ºC using laser induced plasma technique. ZnO nanofilms of 200nm thickness have been deposited on glass substrate. X-RAY diffraction (XRD), atomic force microscopy and UV-visible spectrophotometer were used to analyze the results. XRD forms of ZnO nanostructure display hexagonal structure with three recognized peaks (100), (002), and (101) orientations at 500ºC annealing temperature. The optical properties of ZnO nanostructure were determined spectra. The energy gap was 3.1 eV at 300 oC and 3.25eV at 500ºC annealing temperature.

scholarly journals Electroplating of Semiconductor Materials for Applications in Large Area Electronics: A Review

Coatings ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 262 ◽  
Author(s):  
Ayotunde Adigun Ojo ◽  
Imyhamy Mudiy Dharmadasa
Keyword(s):  
Low Cost ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray ◽  
Force Microscopy ◽  
Treatment Processes ◽  
Atomic Force ◽  
Optical And Electronic Properties ◽  
Device Applications

The attributes of electroplating as a low-cost, simple, scalable, and manufacturable semiconductor deposition technique for the fabrication of large-area and nanotechnology-based device applications are discussed. These strengths of electrodeposition are buttressed experimentally using techniques such as X-ray diffraction, ultraviolet-visible spectroscopy, scanning electron microscopy, atomic force microscopy, energy-dispersive X-ray spectroscopy, and photoelectrochemical cell studies. Based on the results of structural, morphological, compositional, optical, and electronic properties evaluated, it is evident that electroplating possesses the capabilities of producing high-quality semiconductors usable for producing excellent devices. In this paper we will describe the progress of electroplating techniques mainly for the deposition of semiconductor thin film materials and their treatment processes, and fabrication of solar cells.

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