scholarly journals Tunable Microwave Filters Using HfO2-Based Ferroelectrics

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 2057
Author(s):  
Martino Aldrigo ◽  
Mircea Dragoman ◽  
Sergiu Iordanescu ◽  
Florin Nastase ◽  
Silviu Vulpe
Keyword(s):  
Hafnium Oxide ◽  
Atomic Layer ◽  
Microwave Filters ◽  
Polar Phase ◽  
Average Roughness ◽  
Layer Deposition ◽  
Low Pass ◽  
Temperature Polarization ◽  
Band Pass ◽  
High Pass

In this paper, we present microwave filters that are based on 6-nm-thick ferroelectric thin films of hafnium oxide doped with zirconium (HfZrO), which are tunable continuously in targeted bands of interest within the frequency range 0.1–16 GHz, when the applied direct current (DC) voltage is swept between 0 V and 4 V. Here, we exploit the orthorhombic polar phase in HfO2 through a careful doping using zirconium in an Atomic Layer Deposition (ALD) process, in order to guarantee phase stabilization at room temperature. Polarization versus voltage characterization has been carried out, showing a remanent polarization (Pr) of ~0.8 μC/cm2 and the coercive voltage at ~2.6 V. The average roughness has been found to be 0.2 nm for HfZrO films with a thickness of 6 nm. The uniform topography, without holes, and the low surface roughness demonstrate that the composition and the structure of the film are relatively constant in volume. Three filter configurations (low-pass, high-pass, and band-pass) have been designed, modelled, fabricated, and fully characterized in microwaves, showing a frequency shift of the minimum of the reflection coefficient between 90 MHz and 4.4 GHz, with a minimum insertion loss of approximately 6.9 dB in high-pass configuration.

CURRENT-MODE ACTIVE-C FILTER EMPLOYING REDUCED NUMBER OF CCCII+s

2007 ◽  
Vol 16 (04) ◽  
pp. 507-516 ◽  
Author(s):  
SHAHRAM MINAEI ◽  
ERKAN YUCE
Keyword(s):  
Current Mode ◽  
Pass Band ◽  
Passive Component ◽  
Resistorless Filter ◽  
Low Pass ◽  
Component Matching ◽  
Band Pass ◽  
High Output Impedance ◽  
Quality Factor Q ◽  
High Pass

In this paper, a universal current-mode second-order active-C filter for simultaneously realizing low-pass, band-pass and high-pass responses is proposed. The presented filter employs only three plus-type second-generation current-controlled conveyors (CCCII+s). This filter needs no critical active and passive component matching conditions and no additional active and passive elements for realizing high output impedance low-pass, band-pass and high-pass characteristics. The angular resonance frequency (ω0) and quality factor (Q) of the proposed resistorless filter can be tuned electronically. To verify the theoretical analysis and to exhibit the performance of the proposed filter, it is simulated with SPICE program.

NOVEL VOLTAGE-MODE UNIVERSAL FILTER USING ONLY TWO CDBAs

2005 ◽  
Vol 14 (01) ◽  
pp. 159-164 ◽  
Author(s):  
SUDHANSHU MAHESHWARI ◽  
IQBAL A. KHAN
Keyword(s):  
Pass Band ◽  
Universal Filter ◽  
Input Selection ◽  
Voltage Mode ◽  
Single Output ◽  
Control Computer ◽  
Low Pass ◽  
Band Pass ◽  
Pass Through ◽  
High Pass

A novel voltage-mode universal filter employing only two current differencing buffered amplifiers (CDBAs) is proposed. The filter uses four inputs and single output to realize six responses, viz. low-pass, high-pass, inverting band-pass, noninverting band-pass, band-elimination, and all-pass through input selection with independent pole-Q control. Computer simulation results using SPICE are also given to verify the theory.

scholarly journals Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition

2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Функциональные оптические элементы и устройства терагерцовой фотоники на основе метаповерхностей

2019 ◽  
pp. 84-84
Keyword(s):  
Low Pass ◽  
Band Pass ◽  
High Pass

Освоение диапазона терагерцовых (ТГц) частот электромагнитного спектра (0,1–10 ТГц) делает актуальными задачи разработки и изготовления эффективных оптических элементов для управления характеристиками пучков ТГц-излучения. С инструментальной точки зрения данный спектральный диапазон, соответствующий интервалу длин волн 30÷3000 мкм, удобно позиционирован между примыкающими к нему СВЧ и ИК областями, поскольку позволяет сочетать в терагерцовой аппаратуре инструментальные решения как оптической, так и микроволновой техники. Примером таких решений служат тонкие планарные метало-диэлектрические структуры субволновой топологии, известные в технологии метаматериалов как «метаповерхности» (МП). МП являются, как правило, резонансными электродинамическими структурами, которые эксплуатируются в режиме, когда их характерные резонансные частоты лежат значительно ниже точки возбуждения высших дифракционных гармоник, что отличает такие структуры от дифракционных решеток. Последнее достигается малостью периода расположения элементарных ячеек МП в ее латеральной плоскости в сравнении с рабочей длиной волны. Существенно, что амплитудные, фазовые и поляризационные характеристики МП в заданной полосе частот определяются дизайном ее ячеек, соответствующий выбор которого обеспечивает требуемые функциональные свойства МП-устройств. Последние выгодно сочетают малость толщины/веса и высокую эффективность, которая зачастую не может быть достигнута в рамках решений классической оптики. При этом в ТГц-диапазоне характерный размер элементов топологического рисунка МП в большинстве случаев составляет от нескольких единиц до сотен мкм, что позволяет применять для его производства сравнительно недорогие и хорошо отработанные литографические технологии. В настоящем докладе представлен обзор экспериментальных результатов по разработке оптических элементов и устройств на основе метаповерхностей традиционных и новых конфигураций, которые предназначены как для автономного применения, так и для интеграции с различными метрологическими системами, работающими в области частот от сотни ГГц до нескольких ТГц. Составляя неотъемлемую часть российской элементной базы радиофотоники, разработанные элементы в ряде случаев опережают по функциональным характеристикам отечественные и зарубежные аналоги. Обсуждаются вопросы электродинамического моделирования, технологического производства, спектральной характеризации, а также практического использования следующих типов терагерцовых МП-устройств и систем на их основе: 1) частотные фильтры различных видов: band-pass, low-pass, high-pass; дихроичные мультиплексоры пучков излучения; спектрорадиометрические системы на базе полосовых фильтров; 2) поляризаторы; преобразователи фазы и поляризации; 3) плоские фокусирующие элементы, включая голографические структуры; 4) ультратонкие резонансные поглотители и тепловые детекторы на их основе, включая многоканальные пироэлектрические линейки для спектральных и поляризационных измерений с пространственным разрешением; 5) перестраиваемые ЖК-устройства на основе высокоимпедансных поверхностей; 6) сенсоры тонкопленочных аналитов, включая SEIRA-структуры.

scholarly journals Design and Implementation of Digital Filters for ECG Data Based on Field Programmable Gate Array and MATLAB

2020 ◽  
pp. 17-19
Author(s):  
Emre Cancioglu ◽  
Gokberk Cakiroglu ◽  
Alkim Gokcen ◽  
Yilmaz Sefa Altanay
Keyword(s):  
Digital Filters ◽  
Pass Band ◽  
System Generator ◽  
Design And Implementation ◽  
Field Programmable ◽  
Low Pass ◽  
Band Pass ◽  
Database Platform ◽  
High Pass ◽  
Ecg Data

This study provides design and implementation of four digital filters (low pass, high pass, band pass and band stop) for ECG (electrocardiogram) data on FPGA with MATLAB by a serial communication. The study is conducted with using ECG data which is obtained from PhysioBank Database platform. SysGen (System Generator for DSP) which is a toolbox for MATLAB is used for designing and implementing the digital filters. The aim of the study is to perform four different digital filters with various blocks on the SysGen Toolbox. The study then examines the results of four different digital filters.

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

2002 ◽  
Vol 92 (10) ◽  
pp. 5698-5703 ◽  
Author(s):  
Kaupo Kukli ◽  
Mikko Ritala ◽  
Jonas Sundqvist ◽  
Jaan Aarik ◽  
Jun Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Insights into the passivation effect of atomic layer deposited hafnium oxide for efficiency and stability enhancement in organic solar cells

2018 ◽  
Vol 6 (30) ◽  
pp. 8051-8059 ◽  
Author(s):  
Ermioni Polydorou ◽  
Martha Botzakaki ◽  
Charalampos Drivas ◽  
Kostas Seintis ◽  
Ilias Sakellis ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Organic Solar Cells ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Stability Enhancement

Atomic layer deposition of HfO2 significantly increases the efficiency and prolongs the lifetime of organic solar cells.

A New Tunable SISO Filter Designed in 40nm CMOS for Bilateral Inverse and Buffer Filtering Applications

2021 ◽  
pp. 2150240
Author(s):  
Umar Mohammad ◽  
Fang Tang ◽  
Shu Zhou ◽  
Mohd Yusuf Yasin
Keyword(s):  
Simulation Analysis ◽  
Pass Band ◽  
Single Input Single Output ◽  
Change Of Direction ◽  
Single Output ◽  
Low Pass ◽  
Single Input ◽  
Band Pass ◽  
Parasitic Components ◽  
High Pass

A new study imitating the design and implementation of single-input–single-output (SISO) filters as bilateral filters has been presented in this paper. Second generation current controlled current conveyor (CCCII), being a popular low power active element was considered for the realization of the proposed design. Complete design, analysis and implementation of the voltage mode SISO filter was done using only two CCCII’s and two passive parasitic components. The striking feature of this work is that the proposed design can be made to work at either the input node or the output node, as well as in the cases; the change of direction changes the filter into an inverse filter and buffer filter. Basic filter applications like low-pass, high-pass, band-pass and band-stop were aimed to check the uniformity of the proposed design at different frequencies. Results perceived from the simulation study were fare enough on both the side nodes of the proposed design. Categorically, the circuit can be aimed to work in lieu of a filter transceiver. The consistency of the circuit was analyzed by the nodal analysis. Whereas the working performance was enormously analyzed and evaluated during the simulation analysis. The proposed design was simulated in HSPICE tool to exhibit and exploit the delivery, using the 45[Formula: see text]nm predictive technology model (PTM) parameters, with [Formula: see text][Formula: see text]V rail to rail voltages. Maximum power consumption of the circuit is around 138.5[Formula: see text][Formula: see text]W. Finally, the design was also implemented in Cadence Virtuoso using 40[Formula: see text]nm SMIC parameters.

Design, Simulation and Testing of High Density, High Current Micro-machined Embedded Capacitors

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 000515-000534
Author(s):  
Aubrey Beal ◽  
C. Stevens ◽  
T. Baginski ◽  
M. Hamilton ◽  
R. Dean
Keyword(s):  
Integrated Circuits ◽  
Hafnium Oxide ◽  
Implementation Strategies ◽  
Atomic Layer ◽  
High Density ◽  
Embedded Capacitors ◽  
Passive Devices ◽  
Layer Deposition ◽  
High K ◽  
High K Materials

Due to increasing speed, density and number of signal paths in integrated circuits, motivations for high density capacitors capable of quickly sourcing large amounts of current have led to many design and fabrication investigations. This work outlines continued efforts to achieve devices which meet these stringent requirements and are compatible with standard silicon fabrication processes as well as silicon interposer technologies. Previous work has been further developed resulting in devices exhibiting greater capacitance values by employing geometries which maximize surface area. The Atomic Layer Deposition (ALD) of thin layered high K materials, such as Hafnium Oxide, as opposed to previous silicon-dioxide based devices effectively increased the capacitance per unit area of the structures. This paper outlines the design, fabrication, and testing of high density micro-machined embedded capacitors capable of quickly sourcing (i.e. risetimes greater than 100A/nsec) high currents (i.e. greater than 100A). These devices were successfully simulated then tested using a standard ringdown procedure. Generally, the resulting device characterization found during testing stages strongly correlates to the expected simulated device behavior. Subsequent descriptions and design challenges encountered during fabrication, testing and integration of these passive devices are outlined, as well as potential device integration and implementation strategies for use in silicon interposers. The modification and revision of several device generations is documented and presented. Increased device capacitive density, maximized current capabilities and minimized effects of series inductance and resistance are presented. These resulting thin, capacitive structures exhibit compatibility with Si interposer technology.

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