scholarly journals Self-Catalyzed InSb/InAs Quantum Dot Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 179
Author(s):  
Omer Arif ◽  
Valentina Zannier ◽  
Francesca Rossi ◽  
Daniele Ercolani ◽  
Fabio Beltram ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Growth Rates ◽  
Radial Growth ◽  
Growth Parameters ◽  
Chemical Beam Epitaxy ◽  
Si Substrates ◽  
Single Defect ◽  
Inas Quantum Dot

The nanowire platform offers great opportunities for improving the quality and range of applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by chemical beam epitaxy. A systematic variation of the growth parameters for the InAs top segment has been investigated and the resulting nanowire morphology analyzed. We found that the growth temperature strongly influences the axial and radial growth rates of the top InAs segment. As a consequence, we can reduce the InAs shell thickness around the InSb quantum dot by increasing the InAs growth temperature. Moreover, we observed that both axial and radial growth rates are enhanced by the As line pressure as long as the In droplet on the top of the nanowire is preserved. Finally, the time evolution of the diameter along the entire length of the nanowires allowed us to understand that there are two In diffusion paths contributing to the radial InAs growth and that the interplay of these two mechanisms together with the total length of the nanowires determine the final shape of the nanowires. This study provides insights in understanding the growth mechanisms of self-catalyzed InSb/InAs quantum dot nanowires, and our results can be extended also to the growth of other self-catalyzed heterostructured nanowires, providing useful guidelines for the realization of quantum structures with the desired morphology and properties.

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

2004 ◽  
Vol 85 (5) ◽  
pp. 704-706 ◽  
Author(s):  
H. Y. Liu ◽  
I. R. Sellers ◽  
T. J. Badcock ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Growth Temperature ◽  
High Growth ◽  
Quantum Dot Lasers ◽  
High Growth Temperature ◽  
Spacer Layer ◽  
Improved Performance ◽  
Inas Quantum Dot

Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

Metamorphosis of self-assembled InAs quantum dot through variation of growth rates

2020 ◽  
Vol 824 ◽  
pp. 153870 ◽  
Author(s):  
Binita Tongbram ◽  
Jhuma Saha ◽  
Saumya Sengupta ◽  
Subhananda Chakrabarti
Keyword(s):  
Quantum Dot ◽  
Growth Rates ◽  
Self Assembled ◽  
Inas Quantum Dot

Nanoscale Features Grown by MBE on Nonplanar Patterned Si Substrates

1995 ◽  
Vol 380 ◽  
Author(s):  
Karl D. Hobart ◽  
Fritz J. Kub ◽  
Henry F. Gray ◽  
Mark E. Twigg ◽  
Doewon Park ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Parameters ◽  
Multiple Quantum ◽  
Electron Microscopies ◽  
Si Substrates ◽  
Transmission Electron ◽  
Low Dimensional ◽  
20 Nm ◽  
Nanoscale Features ◽  
Qualitative Changes

ABSTRACTSi growth by molecular beam epitaxy on nonplanar patterned Si substrates is studied as a function of growth parameters. The substrates consist of a truncated pyramid template with {111} sides and (100) tops formed by anisotropic etching of Si(100). For growth temperatures ≤ 550°C no qualitative changes in the morphology of the template are observed. At growth temperatures between 650–700°C {113} facets begin to form on the (100) surface and reduce the lateral dimensions of the (100) facet to < 20 nm. At high temperatures (∼800°C) {113} facets remain stable and {111} facets no longer exist. The small (100) mesa formed at medium temperatures by facet reduction is exploited through the growth of Si/Si 1-xGex multiple quantum wells leading to low-dimensional structures. Observations are quantified by scanning electron and transmission electron microscopies.

InAs quantum dot emission and annealing impact in quantum wells with strain reduced InAlGaAs layers

2015 ◽  
Vol 163 ◽  
pp. 40-46 ◽  
Author(s):  
T.V. Torchynska ◽  
R. Cisneros Tamayo ◽  
G. Polupan ◽  
A. Stints ◽  
L. Shcherbyna
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Inas Quantum Dot

The Shape Control of ZnO Based Nanostructures

2006 ◽  
Vol 6 (11) ◽  
pp. 3628-3632
Author(s):  
M. N. Jung ◽  
S. Y. Ha ◽  
H. S. Kim ◽  
H. J. Ko ◽  
H. Ko ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Shape Control ◽  
Deep Level ◽  
Growth Parameters ◽  
Stoichiometric Composition ◽  
Growth Conditions ◽  
Second Phase ◽  
Gas Flux ◽  
Carrier Gas ◽  
Si Substrates

Tetrapod-shape ZnO nanostructures are formed on Si substrates by vapor phase transportation method. The effects of two important growth parameters, growth temperature and VI/II ratio, are investigated. The growth temperature is varied in the range from 600 °C to 900 °C to control the vapor pressure of group II-element and the formation process of nanostructures. VI/II ratio was changed by adjusting the flux of carrier gas which affects indirectly the supplying rate of group VI-element. From the scanning electron microscopy (SEM), systematic variation of shape including cluster, rod, wire and tetrapod was observed. ZnO tetrapods, formed at 800 °C under the carrier gas flux of 0.5 cc/mm2 min, show considerably uniform shape with 100 nm thick and 1 ∼ 1.5 μm long legs. Also stoichiometric composition (O/Zn ∼ 1) was observed without any second phase structures. While, the decrease of growth temperature and the increase of carrier gas flux, results in the irregular shaped nanostructures with non-stoichiometric composition. The excellent luminescence properties, strong excitonic UV emission at 3.25 eV without deep level emission, indicate that the high crystalline quality tetrapod structures can be formed at the optimized growth conditions.

Broad Band vs Phonon Resolved Luminescence in Si1−xGex/Si Heterostructures Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
D. C. Houghton ◽  
N. L. Rowell ◽  
J.-P. Noel ◽  
M. M. Dion ◽  
J. McCaffrey ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Surface Passivation ◽  
Growth Parameters ◽  
Bulk Material ◽  
Substrate Surface ◽  
Broad Band ◽  
Surface Preparation ◽  
Plan View ◽  
Pl Spectra

ABSTRACTSi1−xGex alloys and multilayers synthesized by solid source MBE on Si(100) substrates have been characterized by low temperature photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM). Phonon resolved transitions originating from excitons bound to shallow impurities were observed in addition to a broad band of intense luminescence. PL spectroscopy over the temperature range 2K to 100K has been used to characterize Si1−xGex/Si heterostructures exhibiting both types of PL spectra. Thin alloy layers exhibited phonon-resolved PL spectra, similar to bulk material, but shifted in energy due to strain and hole quantum confinement. In single quantum wells confinement shifts up to ∼200 meV were observed (1.2 nm wells with x = 0.38) and NP linewidths down to 1.37 meV were obtained. However, the broad PL band (peak energy ∼120meV below the strained bandgap) was predominant when the alloy layer thickness was greater than 2 – 10nm, depending on x, growth temperature, and substrate surface preparation. The strength of the broad PL band was correlated with the areal density of strain perturbations (∼109cm−2 per quantum well; local lattice dilation ∼1.5 nm in diameter) observed in plan-view TEM. The role of MBE growth parameters in determining optical properties was investigated by changing growth temperature, substrate preparation procedures and exploring the effect of surface passivation in a hydrogen ambient. In addition, post growth anneals at temperatures in the range 700°C to 1 100°C were carried out, where interdiffusion removes interfacial asperities and the broad luminescence band decays to zero intensity.

Sign in / Sign up

Export Citation Format

Share Document