scholarly journals Epitaxially Integrated Hierarchical ZnO/Au/SrTiO3 and ZnO/Ag/Al2O3 Heterostructures: Three-Dimensional Plasmo-Photonic Nanoarchitecturing

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3262
Author(s):  
Youngdong Yoo ◽  
Minjung Kim ◽  
Bongsoo Kim
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Cross Section ◽  
Three Dimensional ◽  
Zno Nanowires ◽  
Zno Thin Films ◽  
Zno Nanostructures ◽  
Al2o3 Substrate ◽  
Au Nanowire ◽  
Au Nanowires

In this study, we fabricated three-dimensional (3D) hierarchical plasmo-photonic nanoarchitectures by epitaxially integrating semiconducting zinc oxide (ZnO) nanowires with vertically oriented plasmonic gold (Au) and silver (Ag) nanoplatforms and investigated their growth mechanisms in detail. We synthesized 3D hierarchical Au–ZnO nanostructures via a vapor–solid mechanism leading to the epitaxial growth of ZnO nanowires on vertically oriented single-crystalline Au nanowires on a strontium titanate (SrTiO3) substrate. The elongated half-octahedral Au nanowires with a rhombus cross-section were transformed into thermodynamically stable elongated cuboctahedral Au nanowires with a hexagonal cross-section during the reaction. After the transformation, ZnO thin films with six twinned domains were formed on the side planes of the elongated cuboctahedral Au nanowire trunks, and six ZnO nanowire branches were grown on the ZnO thin films. Further, 3D hierarchical Ag–ZnO nanostructures were obtained via the same vapor–solid mechanism leading to the epitaxial growth of ZnO nanowires on vertically oriented Ag nanoplates on an aluminum oxide (Al2O3) substrate. Therefore, the growth mechanism developed herein can be generally employed to fabricate 3D hierarchical plasmo-photonic nanoarchitectures.

Epitaxial Growth of ZnO Nanowires Over the ZnO Thin Films Depositedon the Si and Sapphire Substrates

2008 ◽  
Vol 8 (9) ◽  
pp. 4653-4657 ◽  
Author(s):  
No-Kuk Park ◽  
You Jin Lee ◽  
Ji Young Jung ◽  
Won Guen Lee ◽  
Young Je Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Flow Reactor ◽  
Deposition Process ◽  
Zno Nanowires ◽  
Zno Thin Films ◽  
Thermal Evaporation Method ◽  
Zinc Oxide Films ◽  
Cost Efficient

Epitaxial growth of ZnO nanowires was carried out using a modified thermal evaporation method with inexpensive experimental setup. ZnO nanowires were synthesized using ZnO thin films. The ZnO thin films were deposited as a buffer layer on silicon and sapphire using an impinging flow reactor (IFR). The IFR system is a modified version of a chemical bath deposition (CBD). Films can be created at low temperature, without any metallic catalysts. The properties of Zinc Oxide films are dependant upon the type of substrate used. The same deposition process with a different substrates yields two films with different properties. The most critical effect on growth of ZnO nanowires were dependent the properties of the buffer layer deposited on the substrate. It was not the type of substrate used. A cost-efficient method for epitaxial growth of single crystal ZnO nanowires is proposed in this work.

Microstructure Evolution of Epitaxial (Ba, Sr) TiO3/ (001) HgO Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
V.A. Alyoshin ◽  
E.V. Sviridov ◽  
V.I.M. Hukhortov ◽  
I.H. Zakharchenko ◽  
V.P. Dudkevich
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Microstructure Evolution ◽  
Three Dimensional ◽  
Gas Pressure ◽  
Smooth Surfaces ◽  
Two Dimensional ◽  
Surface Versus ◽  
Deposition Conditions

ABSTRACTSurface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)TiO3 films rf-sputtered on (001) HgO crystal cle-avage surface versus the oxygen worKing gas pressure P and subst-rate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. The deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Direct-epitaxial growth of SrAl2O4:Eu,Dy thin films on Al2O3 substrate by pulsed laser deposition

2019 ◽  
Vol 491 ◽  
pp. 53-59
Author(s):  
Huan Ma ◽  
Tornike Gagnidze ◽  
Bernhard Walfort ◽  
Marta D. Rossell ◽  
Claudia Cancellieri ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Al2o3 Substrate

Epitaxial growth of NH3-doped ZnO thin films on 〈〉 oriented sapphire substrates

2003 ◽  
Vol 255 (3-4) ◽  
pp. 293-297 ◽  
Author(s):  
Jinzhong Wang ◽  
Guotong Du ◽  
Baijun Zhao ◽  
Xiaotian Yang ◽  
Yuantao Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Zno Thin Films ◽  
Sapphire Substrates ◽  
Doped Zno

Effect of Electroless Copper on the Growth of ZnO Nanowires

2005 ◽  
Vol 20 (9) ◽  
pp. 2348-2353 ◽  
Author(s):  
Wen-Ting Chiou ◽  
Wan-Yu Wu ◽  
Jyh-Ming Ting
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Average Length ◽  
Average Diameter ◽  
Sputter Deposition ◽  
Zno Nanowires ◽  
Zno Thin Films ◽  
Silicon Substrates ◽  
Reactive Sputter Deposition ◽  
Electroless Copper

ZnO nanowires along with ZnO thin films were obtained on copper-metallized silicon substrates using an radio frequency-reactive sputter-deposition technique. Residual tensile stresses were found in both the copper layer and the ZnO layer. The ZnO nanowires were observed exclusively at the grain boundaries of the ZnO thin films. The average diameter of ZnO nanowires varies only slightly with the ZnO deposition time, while the average length increases linearly with the ZnO deposition time. Based on the observations a growth model involving stress-assisted diffusion of copper and reaction-controlled catalytic growth of ZnO nanowires is suggested.

Studies on Effect of Zinc Oxide (ZnO) Nanostructures Morphology by Modification of Sol-Gel Solution

2015 ◽  
Vol 1125 ◽  
pp. 106-110 ◽  
Author(s):  
Ili Liyana Khairunnisa Kamardin ◽  
Ainun Rahmahwati Ainuddin
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Water Treatment ◽  
Biomedical Application ◽  
Sol Gel ◽  
Zno Nanorods ◽  
Hot Water ◽  
Zno Thin Films ◽  
Hot Water Treatment ◽  
Zno Nanostructures

Zinc Oxide (ZnO) known as wide band gap semiconductor with large excitation energy 60 meV, noncentral symmetry, piezoelectric and biocompatible for biomedical application are the unique characteristic that attract many researcher’s attention on ZnO nanostructure synthesis and physical properties. ZnO thin films were deposited on Si Glass substrate by a sol-gel process. The starting solution were prepare by dissolved zinc acetate dehydrate (ZnAc) and diethanolamine (DEA) in water (H2O) and 2-propanol (2-PrOH). 0 to 60 drops of NaOH were dropped into 100 ml sol-gel solution to study effect of sol-gel modification. ZnO thin films were obtained after preheating the spin coated thin films at 100 °C for 10 minutes after each coating. The coated substrates were undergone for Hot Water Treatment (HWT) process at 90 °C for 6 hours to grow ZnO nanostructures. The effects of sol-gel modification by drop of NaOH into the solution were studied. ZnO nanorods and nanoflakes were obtained after hot water treated at 90 °C for 6 hours with different amount of NaOH dropped directly in the sol-gel solution. On the basis of the changes in morphology and microstructure induced by hot water treatment, it is concluded that the amount of NaOH dropped into sol-gel effected morphology of ZnO growth.

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