scholarly journals Two-Dimensional Nanograting Fabrication by Multistep Nanoimprint Lithography and Ion Beam Etching

2021 ◽  
Vol 1 (1) ◽  
pp. 39-48
Author(s):  
Janek Buhl ◽  
Danbi Yoo ◽  
Markus Köpke ◽  
Martina Gerken
Keyword(s):  
Electron Beam ◽  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Large Scale ◽  
Electrode Materials ◽  
Ion Beam ◽  
Optoelectronic Devices ◽  
Device Fabrication ◽  
Two Dimensional ◽  
Ion Beam Etching

The application of nanopatterned electrode materials is a promising method to improve the performance of thin-film optoelectronic devices such as organic light-emitting diodes (OLEDs) and organic photovoltaics. Light coupling to active layers is enhanced by employing nanopatterns specifically tailored to the device structure. A range of different nanopatterns is typically evaluated during the development process. Fabrication of each of these nanopatterns using electron-beam lithography is time- and cost-intensive, particularly for larger-scale devices, due to the serial nature of electron beam writing. Here, we present a method to generate nanopatterns of varying depth with different nanostructure designs from a single one-dimensional grating template structure with fixed grating depth. We employ multiple subsequent steps of UV nanoimprint lithography, curing, and ion beam etching to fabricate greyscale two-dimensional nanopatterns. In this work, we present variable greyscale nanopatterning of the widely used electrode material indium tin oxide. We demonstrate the fabrication of periodic pillar-like nanostructures with different period lengths and heights in the two grating directions. The patterned films can be used either for immediate device fabrication or pattern reproduction by conventional nanoimprint lithography. Pattern reproduction is particularly interesting for the large-scale, cost-efficient fabrication of flexible optoelectronic devices.

scholarly journals Greyscale 2D nanograting fabrication by multistep nanoimprint lithography and ion beam etching

2020 ◽  
Author(s):  
Janek Buhl ◽  
Danbi Yoo ◽  
Markus Köpke ◽  
Martina Gerken
Keyword(s):  
Electron Beam ◽  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Large Scale ◽  
Development Process ◽  
Electrode Materials ◽  
Ion Beam ◽  
Device Fabrication ◽  
Device Structure ◽  
Ion Beam Etching

Abstract The application of nanopatterned electrode materials is a promising method to improve the performance of thin-film optoelectronic devices such as organic light-emitting diodes and organic photovoltaics. Light coupling to active layers can be enhanced by employing individual nanopatterns specifically tailored to the device structure. During the development process typically a range of different nanopatterns need to be evaluated. Fabrication of each of these nanopatterns using electron-beam lithography is time and cost intensive, particularly for larger scale devices, due to the serial nature of electron beam writing. Here, we present a meth-od to generate nanopatterns of varying depth with different nanostructure designs from a single one-dimensional grating template structure with fixed grating depth. We employ multiple subsequent steps of UV nanoimprint lithography and ion beam etching to fabricate greyscale two-dimensional nanopatterns. After each imprint step, the imprint resist is cured and etched to maintain the structural conformity. In this work we present variable greyscale nanopatterning of the widely used electrode material indium tin oxide. We demonstrate the fabrication of periodic pillar-like nanostructures with different period lengths and heights in the two grating directions. The patterned films can be used either for immediate device fabrication or pattern reproduction by convention-al nanoimprint lithography. This parallel processing approach promises cost-efficient large-scale nanopattern variation for the device development process.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Ion Beam Lithography And Resist Processing for Nanofabrication

2006 ◽  
Vol 983 ◽  
Author(s):  
Khalil Arshak ◽  
Stephen F. Gilmartin ◽  
Damien Collins ◽  
Olga Korostynska ◽  
Arousian Arshak ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Device Fabrication ◽  
Proximity Effects ◽  
Process Equipment ◽  
Proof Of Concept ◽  
Profile Control ◽  
Wafer Processing ◽  
O2 Plasma

AbstractThe International Technology Roadmap for Semiconductors (ITRS) identifies the shrinking of lithography critical dimensions (CDs) as one of biggest challenges facing the semiconductor industry as it progresses to smaller geometry nodes. Nanolithography, the patterning of masking CDs below 100nm, enables both nanoscale wafer processing and the exploration of novel nanotechnology applications and devices.Focused Ion Beam (FIB) lithography has significant advantages over alternative nanolithography techniques, particularly when comparing resist sensitivity, topography effects, proximity effects and backscattering. FIB lithography uses the implantation of ions, such as Ga+, in its masking process. Ions implanted into resist in this manner typically have shallow penetration depths (<100nm for Ga+), and this would typically require the use of very thin resist layers during processing. This is often incompatible with subsequent fabrication steps such as plasma etching, where thicker resist layers are usually required to facilitate etch selectivity. Top surface imaging (TSI) is a solution to this problem.When compared with conventional microelectronic lithography, nanolithography techniques such as EUV, electron beam and nanoimprint lithography require expensive process equipment and the use of non-standard process materials.The 2-step negative resist image by dry etching (2-step NERIME) process is a FIB TSI scheme developed for DNQ/novolak based resists, and involves FIB exposure of resist with Ga+, followed by O2 plasma dry development using reactive ion etching. The 2-step NERIME process uses equipment sets and materials commonly found in microelectronic device fabrication (FIB tool, O2 plasma etcher, DNQ/novolak resists), and provides a low-cost and convenient nanolithography option for proof-of-concept nanoscale processing.To be of practical use, a nanolithography scheme must be capable of patterning nanoscale resist features over substrate topography while retaining resist profile control. The nanolithography scheme must also integrate with subsequent plasma etch processing steps that etch various material films such as metals, Si, SiO2, SiN. The 2-step NERIME FIB TSI process has been used to successfully pattern nanoscale (40nm-90nm) resist features on planar and topography substrates. We have also demonstrated sub-100nm etched features on topography substrates using the 2-step NERIME process, reporting 80nm Polycide and TiN etched features, and 90nm Ti etched features, that exhibit excellent profiles and minimal line edge roughness (LER).It is expected that the 2-step NERIME FIB TSI process will be further extended to etch sub-40nm features over topography substrates. The nanoscale etched features will be used to explore proof-of-concept geometry shrink & novel structures, with many possible applications, including NEMs and nanosensors research and development.

scholarly journals Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

1998 ◽  
Vol 537 ◽  
Author(s):  
Daniel Hofstetter ◽  
Robert L. Thornton ◽  
Linda T. Romano ◽  
David P. Bour ◽  
Michael Kneissl ◽  
...  
Keyword(s):  
Ion Beam ◽  
Device Fabrication ◽  
Distributed Feedback ◽  
Coupling Scheme ◽  
Optically Pumped ◽  
Ion Beam Etching ◽  
Measurement Results ◽  
Dfb Laser ◽  
First Time

AbstractWe present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1. 1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

Microfluidic Cell Heating Characterized by 3-ω Measurements

2008 ◽  
Author(s):  
Thomas Barilero ◽  
Thomas Le Saux ◽  
Ludovic Julien ◽  
Vincent Croquette ◽  
Pierre-Olivier Chapuis ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ion Beam ◽  
Element Model ◽  
Heat Diffusion ◽  
Dimensional Model ◽  
Ion Beam Etching ◽  
3Ω Method ◽  
One Dimensional ◽  
Microfluidic Chamber

Ion beam etching (IBE) was used to microfabricate resistive heaters in indium-tin-oxide (ITO). The device was then closed with a microfluidic chamber and its thermal behavior was investigated using the 3ω method. Experiments and finite element model (FEM) simulations both satisfactorily agreed with a simple one-dimensional model for heat diffusion.

Deeply etched two-dimensional photonic crystals fabricated on GaAs/AlGaAs slab waveguides by using chemically assisted ion beam etching

2002 ◽  
Vol 61-62 ◽  
pp. 875-880 ◽  
Author(s):  
K. Avary ◽  
J.P. Reithmaier ◽  
F. Klopf ◽  
T. Happ ◽  
M. Kamp ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Ion Beam ◽  
Two Dimensional ◽  
Ion Beam Etching ◽  
Slab Waveguides

Electron beam testing of VLSI circuits assisted by focused ion beam etching

1986 ◽  
Vol 4 (2) ◽  
pp. 107-120 ◽  
Author(s):  
Hideaki Arima ◽  
Takayuki Matsukawa ◽  
Junichi Mitsuhashi ◽  
Hiroaki Morimoto ◽  
Hidefumi Nakata
Keyword(s):  
Electron Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vlsi Circuits ◽  
Ion Beam Etching

scholarly journals Acid Exfoliation of Imine-linked Covalent Organic Frameworks Enables Solution Processing into Crystalline Thin Films

2019 ◽  
Author(s):  
David Burke ◽  
Chao Sun ◽  
Ioannina Castano ◽  
Nathan C. Flanders ◽  
Austin Evans ◽  
...  
Keyword(s):  
Large Scale ◽  
Optoelectronic Devices ◽  
Charge Storage ◽  
Solution Processing ◽  
Two Dimensional ◽  
Covalent Organic Frameworks ◽  
Nanofiltration Membranes ◽  
Storage Devices ◽  
Crystalline Polymers ◽  
Promising Strategy

Covalent organic frameworks (COFs) are highly modular, porous, crystalline polymers of interest for charge storage devices, nanofiltration membranes, optoelectronic devices, and more. COFs are typically synthesized as microcrystalline powders, a morphology that limits their performance in these applications, and their limited solubility precludes large-scale processing into more useful morphologies and devices. Here, we report a general, scalable method to exfoliate two-dimensional imine-linked COF powders by temporarily protonating their linkages. The resulting suspensions were cast into continuous, crystalline COF films up to 10 cm in diameter. This strategy was successfully applied to three different COF structures, and excellent film thickness control (50 nm to 20 µm) was achieved by modifying the suspension composition, concentration, and casting protocol. Acid-mediated exfoliation is a promising strategy for solution processing readily accessible imine-linked COF powders into functional devices.

Sign in / Sign up

Export Citation Format

Share Document