Photolysis and Photocatalysis of 1,4 Dichlorobenzene Using Sputtered TiO2 Thin Films

The rate of 1,4-dichlorobenzene (1,4-DCB) degradation in the aqueous phase was investigated under direct photolysis or photocatalysis in the presence of TiO2 thin film prepared by reactive sputtering using a metal Ti target and a reaction sputtering atmosphere of argon and oxygen. The prepared thin films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). XPS confirmed the presence of completely oxidized TiO2 films whereas XRD showed that the films contained a mixture of rutile and anatase phases with rutile being approximately 30% of the total volume. Two lamps, both of the same power but different wavelength range were employed as irradiation sources. Photocatalysis showed faster removal of 1,4-DCB as compared to direct photolysis. The complete degradation was attained using the freshly prepared TiO2 sample. The intermediate produced during the photocatalysis was benzoquinone. Photolysis using visible irradiation was relatively slower and both benzoquinone and hydroquinone were formed as intermediates. Higher initial degradation rates were observed when the same film was re-used, most probably due to the effect of washing of the TiO2 thin films surface with methanol.

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Improvement of Sensing Performance of Impedancemetric C2H2 Sensor Using SmFeO3 Thin-Films Prepared by a Polymer Precursor Method

Sensors ◽

10.3390/s19040773 ◽

2019 ◽

Vol 19 (4) ◽

pp. 773 ◽

Cited By ~ 3

Author(s):

Tomohisa Tasaki ◽

Satoko Takase ◽

Youichi Shimizu

Keyword(s):

Thin Film ◽

Thin Films ◽

Photoelectron Spectroscopy ◽

Precursor Solution ◽

Particle Growth ◽

Polymer Precursor ◽

X Ray Diffraction ◽

X Ray ◽

Sensor Material ◽

Perovskite Type

A sensitive an impedancemetric acetylene (C2H2) gas sensor device could be fabricated by using perovskite-type SmFeO3 thin-film as a sensor material. The uniform SmFeO3 thin-films were prepared by spin-coating and focusing on the effects of polymer precursor solutions. The prepared precursors and thin-films were characterized by means of thermal analysis,　Fourier-transform infrared spectroscopy, ultraviolet–visible spectroscopy, X-ray diffraction analysis, scanning electron microscopy and X-ray photoelectron spectroscopy . It was found that particle growth and increase in homogeneity of the prepared thin-film could be accelerated by the addition of acetyl acetone (AcAc) as a coordination agent in the polymer precursor solution. Moreover, the highly crystallized thin-film-based sensor showed good response properties and stabilities to a low C2H2 concentration between 0.5 and 2.0 ppm.

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Study of the Layer-Type BST Thin Film with X-ray Diffraction and X-ray Photoelectron Spectroscopy

Materials ◽

10.3390/ma15020578 ◽

2022 ◽

Vol 15 (2) ◽

pp. 578

Author(s):

Agata Lisińska-Czekaj ◽

Dionizy Czekaj

Keyword(s):

Thin Film ◽

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Photoelectron Spectroscopy ◽

Chemical Compositions ◽

X Ray Diffraction ◽

X Ray ◽

Barium Strontium ◽

Bst Thin Film

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.

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IMPROVED CAPACITIVE BEHAVIOR OF MnO2 THIN FILMS PREPARED BY ELECTRODEPOSITION ON THE PT SUBSTRATE WITH A MnOx BUFFER LAYER

Functional Materials Letters ◽

10.1142/s1793604709000478 ◽

2009 ◽

Vol 02 (01) ◽

pp. 13-18 ◽

Cited By ~ 33

Author(s):

H. XIA ◽

W. XIAO ◽

M. O. LAI ◽

L. LU

Keyword(s):

Thin Film ◽

Thin Films ◽

Buffer Layer ◽

Photoelectron Spectroscopy ◽

Rate Capability ◽

Reference Electrode ◽

Cycle Performance ◽

X Ray Diffraction ◽

X Ray ◽

Supercapacitor Application

Nanostructured MnO 2 thin films were prepared on two types of substrates, Pt / Ti / SiO 2/ Si (PT) and MnO x/ Pt / Ti / SiO 2/ Si ( MnO x/ PT ), by the technique of cyclic-voltammetric electrodeposition. The MnO x buffer layer was deposited on the PT substrate by pulsed laser deposition (PLD). The as-deposited MnO 2 thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and X-ray photoelectron spectroscopy (XPS). The electrochemical properties of the thin film MnO 2 electrodes were investigated using cyclic voltammetry (CV) in 1 M Na 2 SO 4 electrolyte. It was found that the adhesion between the MnO 2 film and the Pt substrate was poor, resulting in cracks and peeling of the MnO 2 film after deposition. However, the adhesion of the MnO 2 film with the MnO x buffer layer was greatly improved, resulting in superior pseudocapacitive performance of the thin film electrodes. A specific capacitance of about 364 F/g of MnO 2 thin films deposited on the MnO x buffer layer can be obtained at a scan rate of 10 mV/s in the voltage window between 0 and 0.9 V versus the Ag / AgCl reference electrode. The MnO 2 thin film deposited on the MnO x/ PT substrate exhibits good rate capability and excellent cycle performance, which makes it promising for supercapacitor application.

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Palladium Nanowire Thin Films via Template Growth

MRS Proceedings ◽

10.1557/proc-775-p4.7 ◽

2003 ◽

Vol 775 ◽

Author(s):

Donghai Wang ◽

David T. Johnson ◽

Byron F. McCaughey ◽

J. Eric Hampsey ◽

Jibao He ◽

...

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Conductive Substrate ◽

Palladium Nanowires ◽

Efficient Route ◽

Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

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A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

Journal of Materials Science ◽

10.1007/s10853-021-06269-3 ◽

2021 ◽

Author(s):

Tianlei Ma ◽

Marek Nikiel ◽

Andrew G. Thomas ◽

Mohamed Missous ◽

David J. Lewis

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Mixed Valence ◽

Chemical Vapour ◽

X Ray Diffraction ◽

X Ray ◽

Conducting Oxides ◽

Valence States ◽

3 Omega ◽

First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

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X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽

10.3390/polym13030478 ◽

2021 ◽

Vol 13 (3) ◽

pp. 478

Author(s):

Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽

Yap Wing Fen ◽

Silvan Saleviter ◽

Narong Chanlek ◽

Hideki Nakajima ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Graphene Oxide ◽

Photoelectron Spectroscopy ◽

Functional Group ◽

Optical Sensing ◽

Composite Thin Films ◽

Cobalt Ions ◽

X Ray ◽

Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

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Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽

10.3390/surfaces4020013 ◽

2021 ◽

Vol 4 (2) ◽

pp. 106-114

Author(s):

Yannick Hermans ◽

Faraz Mehmood ◽

Kerstin Lakus-Wollny ◽

Jan P. Hofmann ◽

Thomas Mayer ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Fast Method ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Post Annealing ◽

Rf Signal ◽

First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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Optical properties of anatase TiO2 films modified by N ion implantation

Canadian Journal of Physics ◽

10.1139/p11-136 ◽

2012 ◽

Vol 90 (1) ◽

pp. 39-43 ◽

Cited By ~ 2

Author(s):

X. Xiang ◽

D. Chang ◽

Y. Jiang ◽

C.M. Liu ◽

X.T. Zu

Keyword(s):

Thin Films ◽

Ion Implantation ◽

Photoelectron Spectroscopy ◽

Radio Frequency Magnetron Sputtering ◽

X Ray Diffraction ◽

X Ray ◽

Atomic Force ◽

Light Region ◽

Uv Visible ◽

Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

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Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽

10.1557/adv.2016.510 ◽

2016 ◽

Vol 1 (39) ◽

pp. 2711-2716 ◽

Cited By ~ 2

Author(s):

V. Vasilyev ◽

J. Cetnar ◽

B. Claflin ◽

G. Grzybowski ◽

K. Leedy ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Pyroelectric Coefficient ◽

X Ray Diffraction ◽

Ir Detectors ◽

Pyroelectric Properties ◽

X Ray ◽

Sensing Applications ◽

Pyroelectric Material ◽

Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

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Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

Canadian Journal of Physics ◽

10.1139/p88-060 ◽

1988 ◽

Vol 66 (5) ◽

pp. 373-375 ◽

Cited By ~ 4

Author(s):

C. J. Arsenault ◽

D. E. Brodie

Keyword(s):

Thin Film ◽

Thin Films ◽

Activation Energy ◽

Electrical Properties ◽

Structural Properties ◽

Crystallization Process ◽

X Ray Diffraction ◽

Electrical Measurements ◽

Conductivity Activation Energy ◽

X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

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