Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known about their noise characterization when being operated in a liquid gate configuration. The noise characteristics in various regimes of their operation are important to select the most suitable conditions for signal-to-noise ratio (SNR) and power consumption. This work reports systematic DC, transient, and noise characterizations and models of a back-end of line (BEOL)-modified foundry-made ISFET used as pH sensor. The aim is to determine the sensor sensitivity and resolution to pH changes and to calibrate numerical and lumped element models, capable of supporting the interpretation of the experimental findings. The experimental sensitivity is approximately 40 mV/pH with a normalized resolution of 5 mpH per µm2, in agreement with the literature state of the art. Differences in the drain current noise spectra between the ISFET and MOSFET configurations of the same device at low currents (weak inversion) suggest that the chemical noise produced by the random binding/unbinding of the H+ ions on the sensor surface is likely the dominant noise contribution in this regime. In contrast, at high currents (strong inversion), the two configurations provide similar drain noise levels suggesting that the noise originates in the underlying FET rather than in the sensing region.

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Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal–Oxide–Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dl05 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DL05 ◽

Cited By ~ 4

Author(s):

Hou-Yu Chen ◽

Chia-Yi Lin ◽

Min-Cheng Chen ◽

Chien-Chao Huang ◽

Chao-Hsin Chien

Keyword(s):

Polycrystalline Silicon ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Ph Sensor ◽

High Sensitivity ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Effect Transistor

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Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal–Oxide–Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dl05 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DL05 ◽

Cited By ~ 1

Author(s):

Hou-Yu Chen ◽

Chia-Yi Lin ◽

Min-Cheng Chen ◽

Chien-Chao Huang ◽

Chao-Hsin Chien

Keyword(s):

Polycrystalline Silicon ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Ph Sensor ◽

High Sensitivity ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Effect Transistor

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Erratum: “Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal–Oxide–Semiconductor Technology”

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.059202 ◽

2018 ◽

Vol 57 (5) ◽

pp. 059202

Author(s):

Hou-Yu Chen ◽

Chia-Yi Lin ◽

Min-Cheng Chen ◽

Chien-Chao Huang ◽

Chao-Hsin Chien

Keyword(s):

Polycrystalline Silicon ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Ph Sensor ◽

High Sensitivity ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Effect Transistor

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AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

MRS Proceedings ◽

10.1557/proc-743-l9.11 ◽

2002 ◽

Vol 743 ◽

Author(s):

Z. Y. Fan ◽

J. Li ◽

J. Y. Lin ◽

H. X. Jiang ◽

Y. Liu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cutoff Frequency ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors ◽

Gate Control

ABSTRACTThe fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.

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Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c051 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C051 ◽

Cited By ~ 5

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Transient Behavior ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽

10.1557/s0883769400035326 ◽

1996 ◽

Vol 21 (4) ◽

pp. 38-44 ◽

Cited By ~ 62

Author(s):

F.K. LeGoues

Keyword(s):

Metal Oxide ◽

High Speed ◽

High Performance ◽

Field Effect Transistors ◽

Low Cost ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Design Rule ◽

Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

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A Programmable Impedance Tuner with a High Resolution Using a 0.18-um CMOS SOI Process for Improved Linearity

Electronics ◽

10.3390/electronics9010007 ◽

2019 ◽

Vol 9 (1) ◽

pp. 7

Author(s):

Younghwan Bae ◽

Heesauk Jhon ◽

Junghyun Kim

Keyword(s):

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Impedance Variation ◽

Measurement Results ◽

Power Handling Capability ◽

Impedance Tuners ◽

Step Over ◽

Load Pull

In this paper, a novel coupler/reflection-type programmable electronic impedance tuner combined with switches that were fabricated by a 0.18-um complementary metal–oxide–semiconductor (CMOS) silicon-on-insulator (SOI) process is proposed for replacement of the conventional mechanical tuner in power amplifier (PA) load-pull test. By employing the multi-stacked field-effect transistors (FETs) as a single-branch switch, the proposed tuner has the advantage of precise impedance variation with systematic and magnitude and phase adjustment. Additionally, it led to high standing wave ratio (SWR) coverage and a good impedance resolution with a high power handling capability. Furthermore, the double-branch based on multi-stacked FET was applied to switches for additional enhancement of the intermodulation distortion (IMD) performance through the mitigated drain-source voltage of the single-FET. Drawing upon the measurement results, we demonstrated that SWR changed from 2 to 6 sequentially with a 12–15° phase angle step over a mid/high-band range of a 1.5–2.1 GHz band for 3G/4G handset application. In addition, the PA load-pull measurement results obtained using the proposed tuners verified their practicality and competitive performance with mechanical tuners. Finally, the measured linearity using the double-branch switch demonstrated the good IMD3 performance of −78 dBc, and this result is noteworthy when compared with conventional electronic impedance tuners.

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Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors ◽

10.3390/s20174731 ◽

2020 ◽

Vol 20 (17) ◽

pp. 4731

Author(s):

Wei-Ren Chen ◽

Yao-Chuan Tsai ◽

Po-Jen Shih ◽

Cheng-Chih Hsu ◽

Ching-Liang Dai

Keyword(s):

Magnetic Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Magnetic Field Effect ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Cmos Process ◽

Micro Sensor

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

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Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.860 ◽

2016 ◽

Vol 858 ◽

pp. 860-863 ◽

Cited By ~ 6

Author(s):

Takuma Matsuda ◽

Takashi Yokoseki ◽

Satoshi Mitomo ◽

Koichi Murata ◽

Takahiro Makino ◽

...

Keyword(s):

Field Effect ◽

Gamma Ray ◽

Field Effect Transistors ◽

Absorbed Dose ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Radiation Response ◽

Electrical Characteristics ◽

Gamma Ray Irradiation

Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain current at gate voltages below threshold voltage increased with increasing absorbed dose. However, no significant change in the electrical characteristics of SiC MOSFETs was observed at doses above 1.2 MGy. For blocking characteristics, there were no degradations of the SiC MOSFETs irradiated at 150°C even after irradiated at 10.4 MGy.

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