scholarly journals Current-Induced Spin Photocurrent in GaAs at Room Temperature

Sensors ◽  
2022 ◽  
Vol 22 (1) ◽  
pp. 399
Author(s):  
Yang Zhang ◽  
Yu Liu ◽  
Xiao-Lan Xue ◽  
Xiao-Lin Zeng ◽  
Jing Wu ◽  
...  
Keyword(s):  
Electric Field ◽  
Spin Polarization ◽  
Applied Electric Field ◽  
Room Temperature ◽  
Polarization Direction ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Sample Plane ◽  
Bulk Gaas ◽  
Circularly Polarized

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

scholarly journals Electrical control of carriers' spin orientation in the FeVTiSi Heusler alloy

2015 ◽  
Vol 3 (11) ◽  
pp. 2563-2567 ◽  
Author(s):  
Jiahui Zhang ◽  
Xingxing Li ◽  
Jinlong Yang
Keyword(s):  
Spin Polarization ◽  
Heusler Alloy ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Polarization Direction ◽  
Spin Orientation ◽  
Electrical Control ◽  
Carrier Doping

Control of the spin-polarization direction by carrier doping in a quaternary Heusler alloy FeVTiSi with a bipolar magnetic semiconducting character and room temperature ferromagnetism.

Ferroelectricity and phase transitions in In2Se3 van der Waals material

Nanoscale ◽  
2020 ◽  
Vol 12 (44) ◽  
pp. 22688-22697
Author(s):  
Maryam Soleimani ◽  
Mahdi Pourfath
Keyword(s):  
Phase Transitions ◽  
Electric Field ◽  
Applied Electric Field ◽  
Room Temperature ◽  
Van Der Waals ◽  
Out Of Plane

Van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field.

Positron annihilation in methane

1977 ◽  
Vol 55 (3) ◽  
pp. 235-239 ◽  
Author(s):  
A. C. Mao ◽  
D. A. L. Paul
Keyword(s):  
Electric Field ◽  
Positron Annihilation ◽  
Applied Electric Field ◽  
Room Temperature ◽  
Positive Energy ◽  
Annihilation Rate ◽  
Linear Region ◽  
Gas Density ◽  
Single Level ◽  
Made In

Measurements of positron annihilation rates at room temperature under the influence of an applied electric field have been made in methane at different pressures. The experiments were all carried out in the linear region in which the annihilation rate is accurately proportional to gas density. We find Zeff = 142.7 ± 2.0 at 21 °C and zero electric field. At 1000 Torr Zeff decreases linearly with the electric field, the gradient being about 2.5 × 10−2 per (V cm−1 atm−1) at that temperature. The results repudiate the idea of a positive energy single level Breit–Wigner resonance as being responsible for the high value of Zeff, and in this sense are in agreement with the findings of McNutt, Summerour, Ray, and Huang.

Optical Properties of Self-Organized InGaAs/GaAs Quantum Dots in Field-Effect Structures

1998 ◽  
Vol 536 ◽  
Author(s):  
A. Babinski ◽  
T. Tomaszewicz ◽  
A. Wysmolek ◽  
J. M. Baranowski ◽  
C. Lobo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Low Temperature ◽  
Electric Field ◽  
Field Effect ◽  
Room Temperature ◽  
Applied Bias ◽  
Electric Field Dependence ◽  
Self Organized ◽  
Peak Energy

AbstractThe results of photoluminescence (PL) and electroreflectance (ER) measurements on InGaAs/GaAs self-organized quantum dots (QDs) in field-effect structure are presented. It has been found that the QDs PL can be completely quenched in reversely biased structure both at room temperature and at T=4.2K. A non-monotonic dependence of QDs PL peak energy with applied bias is observed at low temperature, which is attributed to the band-gap re-normalization due to QDs charging and size distribution effects. The electric field dependence of the QDs ER feature at room temperature has been analysed. A red shift of that feature with increasing electric field has been observed.

scholarly journals Quantum-well thickness dependence of spin polarization of excitons

2011 ◽  
Vol 1 (1) ◽  
pp. 5
Author(s):  
M. Idrish Miah
Keyword(s):  
Phase Space ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Spin Polarization ◽  
Optical Orientation ◽  
Space Filling ◽  
Circularly Polarized ◽  
Semiconductor Quantum Wells ◽  
Left And Right

The optical orientation of exciton spins in semiconductor quantum wells (SQWs) was investigated by observing the circular polarization of the photoluminescence (PL). The left/right circularly polarized PL in SQWs was measured. It was found that there is a difference between the two different polarization conditions, which is caused by spin-dependent phase-space filling. The PL polarization was estimated from the signals of the left and right circularly polarized PL and was found to depend on the well thickness of SQWs as well as on the sample temperature. The influence of an electric field on the PL polarization was studied.

Nanorods of Dy Modified BiFeO3 for Multifunctional Device Applications

2011 ◽  
Vol 1303 ◽  
Author(s):  
M. Mandal ◽  
S. P. Duttagupta ◽  
V. R. Palkar
Keyword(s):  
Magnetic Field ◽  
Electric Field ◽  
Applied Electric Field ◽  
Room Temperature ◽  
Lateral Displacement ◽  
Ferroelectric Properties ◽  
Magnetic Domain ◽  
Base Material ◽  
Coupling Behavior ◽  
Device Applications

ABSTRACTWe have developed material (Bi0.7Dy0.3FeO3)(BDFO) which exhibits the multiferroic behavior at room temperature with significant coupling in bulk as well as thin films. If these properties could be fashioned in nano rods, implementation in devices could be certainly more prominent and straight forward. We have therefore used vertically aligned arrays of silicon rods (~5 μm in length and ~ 500 nm in diameter) as base material to direct the growth of BDFO in rod form. BDFO is deposited on the surface of Si rods by using pulsed laser deposition technique. These BDFO/Si rods are then separated from the support, dispersed into propanol and transferred onto SiO2/Si substrates for testing. X-ray diffraction (XRD) results indicate presence of phase pure BDFO layer on Si rods. Saturation observed at room temperature in magnetic and ferroelectric hysteresis loops confirm the coexistence of ferromagnetic and ferroelectric properties. Change in ferroelectric polarization measured on single rod in the presence of applied magnetic field suggests the coupling behavior between two order parameters. Moreover, change in magnetic domain pattern of BDFO rods associated with applied electric field further supports the presence of coupling behavior in both ways. The vertical and lateral displacement occurring in BDFO/Si rods with applied electric field helps to confirm their piezoresponce behavior. BDFO/Si nanorods with multifunctional properties could find variety of novel device applications with flexibility and simplicity in operation. It might include single rod power generation by means of applied stress or magnetic field.

Optical spin polarization in negatively charged InAs self-assembled quantum dots under applied electric field

2003 ◽  
Vol 238 (2) ◽  
pp. 250-253 ◽  
Author(s):  
V. K. Kalevich ◽  
M. Ikezawa ◽  
T. Okuno ◽  
A. Yu. Shiryaev ◽  
A. E. Zhukov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Spin Polarization ◽  
Applied Electric Field ◽  
Self Assembled
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