scholarly journals Películas de SRO-HFCVD como dieléctrico en estructuras MIS y sus propiedades eléctricas

2020 ◽  
pp. 10-15
Author(s):  
Haydee Patricia Martínez-Hernández ◽  
José Alberto Luna-López ◽  
José Álvaro David Hernández-De la luz ◽  
José Federico Casco-Vásquez
Keyword(s):  
Optical Sensors ◽  
Indium Tin Oxide ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Mis Structure ◽  
Heat Treated ◽  
Integrated Optical ◽  
Silicon Excess ◽  
Hot Filament ◽  
Mis Structures

This paper presents the results obtained by the electrooptical characterization of a MIS structure built by depositing a film of an Indium Tin Oxide (ITO) on a Silicon Rich Oxide (SRO) film using the Chemical Vapor Deposition Hot Filament (HFCVD) system. The SROHFCVD films were deposited considering two hydrogen fluxes levels at 25 and 100 sccm, under these conditions we grow single and double films, both being heat treated at 1100 ° C to improve their optical and structural characteristics. Through of the techniques of Null Spectroscopy, XPS and Photoluminescence, it was possible to determine the thickness of the SRO films, quantify the silicon excess present in them and analyze their spectra. These films are used as the active layer in Metal-Insulating-Semiconductor (MIS) structures, such structures were electrically characterized through the I-V curves. From the result of these characterizations a comparison is made between the MIS structures with films virgin (V) and with ones heat-treated (T-T). Characterizations indicate that SRO-HFCVD films with T-T significantly modify the optical and electrical properties of MIS structures, which is promising for the design of integrated optical sensors.

Evaluation of the PAni/B-doped diamond/CF ternary composite performance by varying the properties of constituent materials

MRS Advances ◽  
2017 ◽  
Vol 2 (41) ◽  
pp. 2217-2222
Author(s):  
Lilian M. Silva ◽  
Dalva A. L. Almeida ◽  
Silvia S. Oishi ◽  
Andrea B. Couto ◽  
Neidenêi G. Ferreira
Keyword(s):  
Electrochemical Characterizations ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Charge Transfer Resistance ◽  
Sem Images ◽  
Transfer Resistance ◽  
Ternary Composite ◽  
Boron Doped ◽  
Heat Treated ◽  
Hot Filament

ABSTRACTPolyaniline (PAni)/B-doped diamond/carbon fiber (CF) ternary composites were produced and characterized, aiming their application as electrodes for supercapacitor device. In order to optimize the composite properties, structurally different CF substrates, heat treated at 1000 and 2000°C, were used to grown diamond films. Moreover, the diamond films were grown on CF in two different morphologies, boron doped micro and nanocrystalline diamond (BDD/BDND), by Hot Filament Chemical Vapor Deposition (HFCVD) technique. FEG-SEM images showed that PAni covered and enwrapped the diamond/CF surfaces, producing tridimensional electrodes. Raman spectra confirmed the PAni formation for all composites. Electrochemical characterizations indicated that the PAni/BDD/CF2000 composite has the highest current density and capacitance response among the studied composites combinations. In addition, it showed the most reversible oxidation and reduction processes, the greatest charge storage capacity as well as the lowest charge transfer resistance.

scholarly journals Blue Electroluminescence in SRO-HFCVD Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 943
Author(s):  
Haydee P. Martínez ◽  
José A. Luna ◽  
Roberto Morales ◽  
José F. Casco ◽  
José A. D. Hernández ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Carrier Transport ◽  
Light Emission ◽  
Chemical Vapor ◽  
Metal Insulator ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Hot Filament ◽  
Quartz Substrates

In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

Microstructure of Carbon Film Deposited Using Hot-Filament Chemical Vapor Deposition

2015 ◽  
Vol 48 (6) ◽  
pp. 104-109
Author(s):  
Youn-Joon Baik ◽  
Do-Hyun Kwon ◽  
Jong-Keuk Park ◽  
Wook-Seong Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Hot Filament

scholarly journals Unusual Dependence of the Diamond Growth Rate on the Methane Concentration in the Hot Filament Chemical Vapor Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Lower Growth ◽  
Filament Temperature ◽  
Diamond Phase ◽  
Hot Filament

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.

A soft X-ray absorption study of nanodiamond films prepared by hot-filament chemical vapor deposition

2003 ◽  
Vol 372 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
Y.H Tang ◽  
X.T Zhou ◽  
Y.F Hu ◽  
C.S Lee ◽  
S.T Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Study ◽  
X Ray ◽  
Hot Filament ◽  
X Ray Absorption

Examination of the material properties and performance of thin-diamond film cutting tool inserts produced by arc-jet and hot filament chemical vapor deposition

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cutting Tool ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
And Performance ◽  
Hot Filament

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.

Effect of Argon during Diamond Deposition by Hot Filament Chemical Vapor Deposition

2016 ◽  
Vol 869 ◽  
pp. 721-726 ◽  
Author(s):  
Divani C. Barbosa ◽  
Ursula Andréia Mengui ◽  
Mauricio R. Baldan ◽  
Vladimir J. Trava-Airoldi ◽  
Evaldo José Corat
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Gas Mixture ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Argon Content

The effect of argon content upon the growth rate and the properties of diamond thin films grown with different grains sizes are explored. An argon-free and argon-rich gas mixture of methane and hydrogen is used in a hot filament chemical vapor deposition reactor. Characterization of the films is accomplished by scanning electron microscopy, Raman spectroscopy and high-resolution x-ray diffraction. An extensive comparison of the growth rate values and films morphologies obtained in this study with those found in the literature suggests that there are distinct common trends for microcrystalline and nanocrystalline diamond growth, despite a large variation in the gas mixture composition. Included is a discussion of the possible reasons for these observations.

Growth of self-supported diamond tubes in the hot-filament chemical vapor deposition system

2003 ◽  
Vol 12 (3-7) ◽  
pp. 346-349 ◽  
Author(s):  
Vitor Baranauskas ◽  
Helder J. Ceragioli ◽  
Alfredo C. Peterlevitz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Filament
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