Superhydrophobic property enhancement on guard ring micro-patterned PDMS with simple flame treatment

2020 ◽  
Vol 59 (SI) ◽  
pp. SIIJ05 ◽  
Author(s):  
Nithi Atthi ◽  
Witsaroot Sripumkhai ◽  
Pattaraluck Pattamang ◽  
Oraphan Thongsook ◽  
Rattanawan Meananeatra ◽  
...  
1989 ◽  
Vol 25 (4) ◽  
pp. 296
Author(s):  
J.K. Twynam ◽  
P.A. Claxton ◽  
R.C. Woods ◽  
D.R. Wight
Keyword(s):  

Sensors ◽  
2021 ◽  
Vol 21 (11) ◽  
pp. 3668
Author(s):  
Chi-Chun Chen ◽  
Shu-Yu Lin ◽  
Wen-Ying Chang

This study presents a noncontact electrocardiogram (ECG) measurement system to replace conventional ECG electrode pads during ECG measurement. The proposed noncontact electrode design comprises a surface guard ring, the optimal input resistance, a ground guard ring, and an optimal voltage divider feedback. The surface and ground guard rings are used to reduce environmental noise. The optimal input resistor mitigates distortion caused by the input bias current, and the optimal voltage divider feedback increases the gain. Simulated gain analysis was subsequently performed to determine the most suitable parameters for the design, and the system was combined with a capacitive driven right leg circuit to reduce common-mode interference. The present study simulated actual environments in which interference is present in capacitive ECG signal measurement. Both in the case of environmental interference and motion artifact interference, relative to capacitive ECG electrodes, the proposed electrodes measured ECG signals with greater stability. In terms of R–R intervals, the measured ECG signals exhibited a 98.6% similarity to ECGs measured using contact ECG systems. The proposed noncontact ECG measurement system based on capacitive sensing is applicable for use in everyday life.


1981 ◽  
Vol 4 ◽  
Author(s):  
Rajiv R. Shah ◽  
Robert Mays ◽  
D. Lloyd Crosthwait

ABSTRACTWe report an investigation of the effects of laser processing on the thermal oxides of polysilicon. LPCVD polysilicon, 500 nm thick, deposited on 500 nm thermal oxide of single crystal silicon was laser processed at various stages in the process sequence for device fabrication. Effects of CW Ar+ and pulsed 1.06 and 0.53 μm laser processing were investigated. Laser annealed polysilicon was oxidized in a steam ambient. Using a second level of polysilicon, guard ring diode and capacitors were fabricated. Electrical characterization revealed an improvement in breakdown field strengths of these oxides without deleterious effects on any of the associated interfaces.


1991 ◽  
Vol 165 (5) ◽  
pp. 1282-1286 ◽  
Author(s):  
Masahiro Shinmoto ◽  
Tatsuhiko Kawarabayashi ◽  
Masahiko Ikeda ◽  
Hajime Sugimori

1970 ◽  
Vol 77 (1) ◽  
pp. 21-28 ◽  
Author(s):  
E. Belcarz ◽  
J. Chwaszczewska ◽  
M. Słapa ◽  
M. Szymczak ◽  
J. Tys

Author(s):  
NITHI ATTHI ◽  
Witsaroot Sripumkhai ◽  
Pattaraluck Pattamang ◽  
Oraphan Thongsook ◽  
Rattanawan Meananeatra ◽  
...  
Keyword(s):  

2002 ◽  
Vol 17 (12) ◽  
pp. 1226-1237 ◽  
Author(s):  
Ashutosh Bhardwaj ◽  
Kirti Ranjan ◽  
Namrata ◽  
Sudeep Chatterji ◽  
Ajay K Srivastava ◽  
...  
Keyword(s):  

2017 ◽  
Vol 31 (17) ◽  
pp. 1750193 ◽  
Author(s):  
Wei Wang ◽  
Xiaoyuan Bao ◽  
Li Chen ◽  
Ting Chen ◽  
Guanyu Wang ◽  
...  

This paper proposed a single photon avalanche diodes (SPADs) designed with 0.18 [Formula: see text] standard CMOS process. One of the major challenges in CMOS SPADs is how to raise the low photon detection efficiency (PDE). In this paper, the device structure and process parameters of the CMOS SPAD are optimized so as to improve PDE properties which have been investigated in detail. The CMOS SPADs are designed in p+/n-well/deep n-well (DNW) structure with the p-sub and the p-well guard ring (GR). The simulation results show that with the p-well GR, the quantum efficiency (QE) is about 80% with the breakdown voltage of 12.7 V, the unit responsivity is as high as 0.38 A/W and the PDE of 51% and 53% is obtained when the excess bias is at 1 V and 2 V, respectively. The dark count rate (DCR) is 6.2 kHz when bias voltage is 14 V. With the p-sub GR, the breakdown voltage is 13 V, the unit responsivity is up to 0.26 A/W, the QE is 58%, the PDE is 33% and 37% at excess bias of 1 V and 2 V, respectively. The DCR is 3.4 kHz at reverse bias voltage of 14 V.


2013 ◽  
Vol 34 (3) ◽  
pp. 336-338 ◽  
Author(s):  
Woo-Suk Sul ◽  
Chae-Hun Lee ◽  
Gyu-Seong Cho

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