Highly precise multi-cathode pulsed-DC sputtering employing digital processing -application to layer-by-layer synthesis of cubic (Er0.1Y0.9)2Zr2O7 thin film-

Ferroelectric properties of Lead-free (Bi,La)4Ti3O12 (BLT) films were evaluated on the newly developed MTP (Merged Top-electrode and Plate-line) cell structure. The BLT film was deposited by pulsed-DC sputtering method on a buried Pt/IrOx/Ir bottom electrode stack with W-plug. The BLT composition in the sintered sputtering target was Bi4.8La1.0Ti3.0O12. However, the deposited film composition was about Bi4.0La1.0Ti3.0O12 after the heat treatment of crystallization at 700°C/O2/30sec. And grains of the BLT film were randomly oriented and uniformly small ellipsoidal shape (long direction: ~100nm, short direction: ~20 nm). The remnant polarization (2Pr) and the leakage current density measured in the 100nm-thick BLT film were about 21 C/cm2 and 3 ×10-5 A/cm2 at 3 V, respectively. The fatigue loss was about 10% of the initial polarization value after 1×1011 fatigue cycles.

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Fabrication of layer-by-layer graphene oxide thin film on copper substrate by electrophoretic deposition

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abc3a2 ◽

2020 ◽

Vol 59 (12) ◽

pp. 125001

Author(s):

Nan Ye ◽

Satoka Ohnishi ◽

Mitsuhiro Okada ◽

Kazuto Hatakeyama ◽

Kazuhiko Seki ◽

...

Keyword(s):

Thin Film ◽

Graphene Oxide ◽

Electrophoretic Deposition ◽

Copper Substrate ◽

Oxide Thin Film ◽

Layer By Layer ◽

Layer Graphene

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Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

Applied Physics Letters ◽

10.1063/1.3139864 ◽

2009 ◽

Vol 94 (22) ◽

pp. 222110 ◽

Cited By ~ 33

Author(s):

S. S. N. Bharadwaja ◽

C. Venkatasubramanian ◽

N. Fieldhouse ◽

S. Ashok ◽

M. W. Horn ◽

...

Keyword(s):

Thin Films ◽

Low Temperature ◽

Charge Carrier ◽

Vanadium Oxide ◽

Transport Mechanism ◽

Oxide Thin Films ◽

Hopping Transport ◽

Dc Sputtering ◽

Pulsed Dc ◽

Vanadium Oxide Thin Films

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Pulsed‐DC Sputtering of Highly C‐Axis AlN Film on Top of Si (111) Substrate

physica status solidi (b) ◽

10.1002/pssb.202000549 ◽

2021 ◽

Author(s):

Abid Iqbal ◽

Glenn Walker ◽

Leonie Hold ◽

Alanna Fernandes ◽

Alan Iacopi ◽

...

Keyword(s):

Dc Sputtering ◽

Pulsed Dc ◽

Aln Film

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Radical-triggered cross-linking for molecular layer deposition of SiAlCOH hybrid thin films

Chemical Communications ◽

10.1039/d0cc07858a ◽

2021 ◽

Author(s):

Kristina Ashurbekova ◽

Karina Ashurbekova ◽

Iva Saric ◽

Evgeny Modin ◽

Mladen Petravic ◽

...

Keyword(s):

Thin Film ◽

Film Growth ◽

Molecular Layer ◽

Thin Film Growth ◽

Cross Linking ◽

Layer By Layer ◽

Molecular Layer Deposition ◽

Layer Deposition ◽

Hybrid Thin Films ◽

Enhanced Stability

We developed a thin film growth with a radical-initiated cross-linking of vinyl groups in a layer-by-layer manner via molecular layer deposition (MLD). The cross-linked film exhibited improved properties like 12% higher density and enhanced stability compared to the non-cross-linked film.

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