Method for noncontact measurement of 2DEG mobility and carrier density in AlGaN/GaN on semi-insulating wafers
Keyword(s):
A Charge
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Abstract We present a charge-assisted sheet resistance technique for noncontact wafer level determination of 2DEG mobility vs. sheet carrier density without any test structures or gates. Instead, the electrical biasing of 2DEG is provided by surface charge deposition, using a corona charging method. Analysis of the sheet resistance vs. deposited charge identifies the 2DEG full depletion condition and enables calculation of the 2DEG sheet carrier density required for the mobility. Results for AlGaN/GaN heterostructures on semi-insulating SiC and sapphire substrates show good agreement with Hall results at a zero-bias condition.