Dynamic activation of power-gating-switch configuration for highly reliable nonvolatile large-scale integrated circuits

2021 ◽  
Author(s):  
Fangcen Zhong ◽  
Masanori NATSUI ◽  
Takahiro Hanyu
Keyword(s):  
Integrated Circuits ◽  
Power Supply ◽  
Large Scale ◽  
Spin Transfer Torque ◽  
State Transitions ◽  
Inrush Current ◽  
Power Gating ◽  
Sleep State ◽  
Voltage Fluctuations ◽  
Operation Conditions

Abstract Nonvolatile large-scale integrated circuits (NV-LSIs) with a power-gating (PG) technique can drastically reduce the wasted static power consumption, which is an attractive feature in Internet-of-Things (IoT) edge devices. However, the issues of inrush current and voltage fluctuation due to PG-state transitions are preventing their advancement. This paper describes a technique for stabilizing the operation of NV-LSIs during PG by minimizing inrush current effects and voltage fluctuations. In the proposed technique, several PG switch configurations are prepared and one of them are dynamically selected in accordance with the expected operation conditions, which could minimize inrush current and voltage fluctuations in the power supply. This technique is applied to sub-array-level PG of a spin-transfer torque magneto-resistive random-access memory (STT-MRAM). As a result, inrush current level and the recovery time of the power supply from a sleep state are reduced by up to 83.8% and 68.7%, respectively, while satisfying given performance requirements.

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Characterization of Interconnect Defects Using Scanning Thermal Conductivity Microscopy

2004 ◽  
Author(s):  
H.W. Ho ◽  
J.C.H. Phang ◽  
A. Altes ◽  
L.J. Balk
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Large Scale

Abstract In this paper, scanning thermal conductivity microscopy is used to characterize interconnect defects due to electromigration. Similar features are observed both in the temperature and thermal conductivity micrographs. The key advantage of the thermal conductivity mode is that specimen bias is not required. This is an important advantage for the characterization of defects in large scale integrated circuits. The thermal conductivity micrographs of extrusion, exposed and subsurface voids are presented and compared with the corresponding topography and temperature micrographs.

scholarly journals Analysis of Subsynchronous Torsional of Wind–Thermal Bundled System Transmitted via HVDC Based on Signal Injection Method

Energies ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 474
Author(s):  
Junxi Wang ◽  
Qi Jia ◽  
Gangui Yan ◽  
Kan Liu ◽  
Dan Wang
Keyword(s):  
Wind Power ◽  
High Voltage ◽  
Direct Current ◽  
Computer Aided Design ◽  
Large Scale ◽  
Electromagnetic Transients ◽  
Torsional Mode ◽  
High Voltage Direct Current ◽  
Operation Conditions ◽  
Signal Injection

With the development of large-scale new energy, the wind–thermal bundled system transmitted via high-voltage direct current (HVDC) has become the main method to solve the problem of wind power consumption. At the same time, the problem of subsynchronous oscillation among wind power generators, high-voltage direct current (HVDC), and synchronous generators (SGs) has become increasingly prominent. According to the dynamic interaction among doubly fed induction generators (DFIGs), HVDC, and SGs, a linearization model of DFIGs and SGs transmitted via HVDC is established, and the influence of the electromagnetic transient of wind turbines and HVDC on the electromechanical transient processes of SGs is studied. Using the method of additional excitation signal injection, the influence of the main factors of DFIG on the damping characteristics of each torsional mode of SG is analyzed, including control parameters and operation conditions when the capacity of HVDC is fixed. The mechanism of the negative damping torsional of SGs is identified. A time-domain simulation model is built in Electromagnetic Transients including DC/Power Systems Computer Aided Design (EMTDC/PSCAD) to verify the correctness and effectiveness of the theoretical analysis.

The Feasible Analysis of Transformer Fast Reenergizing with Neutral Point Ungrounded

2013 ◽  
Vol 732-733 ◽  
pp. 958-964
Author(s):  
Yao Zhao ◽  
Yu De Yang ◽  
Yan Hong Pan ◽  
Le Qi
Keyword(s):  
High Voltage ◽  
Power Supply ◽  
Low Voltage ◽  
Second Harmonic ◽  
Neutral Point ◽  
Inrush Current ◽  
Differential Protection ◽  
Time Saving ◽  
Magnetizing Inrush Current ◽  
Transformer Differential Protection

The feasibility of transformer fast reenergizing with neutral point ungrounded after the external fault being removed is analyzed in this paper. By calculating overvoltage and discriminating magnetizing inrush current, it analyzes four ways to restore power of transformer and chooses the optimal strategy which is safe and time-saving. The result shows that in the case of transformer neutral point ungrounded, closing the low-voltage circuit side breaker before the high-voltage, which can effectively limit over-voltage in a safe range. The second harmonic characteristic of magnetizing waveform may disappear, while the intermittent angle characteristics are still significant. With the help of the intermittent angle principle, transformer differential protection may not misuse. The average time for each customer interruption is reduced from 40 minutes to 10 minutes and saves an hour for engineer on the way back and forth. It will greatly improve power supply reliability.

Sign in / Sign up

Export Citation Format

Share Document