Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

Abstract We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal AlN layers grown on sapphire substrates. By annealing at 1600oC, silicon and magnesium atoms were diffused in the AlN layer, while less change was observed in the distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. By annealing at temperatures over 1300oC, the vacancy-related defects were reduced, while oxygen atoms were diffused from the substrate due to sapphire decomposition. We reproducibly achieved silicon-implanted AlN layers with electrical conductance by controlling the annealing temperature and distribution of silicon and oxygen concentrations.

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Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-146-391 ◽

1989 ◽

Vol 146 ◽

Author(s):

Y. M. Kim ◽

G. Q. Lo ◽

D. L. Kwong ◽

H. H. Tseng ◽

R. Hance

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Anomalous Diffusion ◽

Low Dose ◽

Silicon Wafers ◽

Silicon Ions ◽

Defect Evolution ◽

Boron Implantation ◽

Silicon Implantation ◽

Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

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Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.847 ◽

2006 ◽

Vol 527-529 ◽

pp. 847-850

Author(s):

Jaime A. Freitas ◽

Kenneth A. Jones ◽

Michael A. Derenge ◽

R.D. Vispute ◽

Shiva S. Hullavarad

Keyword(s):

Thermal Annealing ◽

Annealing Temperature ◽

Variable Temperature ◽

Stacking Faults ◽

Emission Lines ◽

Luminescence Spectra ◽

Annealing Schedule ◽

Defect Related Emission ◽

Excitation Conditions ◽

Ion Implanted

4H-SiC samples implanted at 600°C with 1020 cm-3 of B or B and C to a depth of ~0.5 μm, capped with (BN/AlN), and annealed at temperatures ranging from 1400°C – 1700°C were studied using variable temperature cathodoluminescence. New emission lines, which may be associated with stacking faults, were observed in the samples co-implanted with B and C, but not in the samples implanted only with B. For both the B and B and C co-implanted samples, the intensity of the line near 3.0 eV decreases with increasing annealing temperature, TA, and this line is not observed after annealing at 1700°C. The D1 defect related emission lines are observed in the luminescence spectra of all samples and their relative intensities seem to vary with the implantation-annealing schedule and excitation conditions.

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The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature

Advances in Condensed Matter Physics ◽

10.1155/2015/963768 ◽

2015 ◽

Vol 2015 ◽

pp. 1-4 ◽

Cited By ~ 1

Author(s):

Y. B. Sun ◽

Z. F. Di ◽

T. Hu ◽

X. M. Xie

Keyword(s):

Single Crystal ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Temperature ◽

Transport Measurements ◽

Annealing Method

We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from the insulating to the superconducting behavior as the annealing temperature increases. Transport measurements suggest that the superconductivity is from the heavily Ga-doped layer in Ge.

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Modeling Dopant Redistribution During Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-71-423 ◽

1986 ◽

Vol 71 ◽

Author(s):

Archie Y.C. Chan

Keyword(s):

Finite Difference ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Temperature ◽

Junction Depth ◽

Impurity Profile ◽

Annealing Cycle ◽

Dopant Redistribution ◽

Ion Implanted

AbstractThe diffusion of ion-implanted dopants in silicon during rapid thermal annealing is modeled using the finite difference method.The change in impurity profile for an initial Pearson IV boron implant is negligible(less than 1 % change in junction depth) when the peak annealing temperature(TP ) is less than 1050 °C and its duration is shorter than 20 seconds. The dopant redistribution becomes significant(greater than 25 % change in junction depth) when Tp is greater than 1200 °C and its duration is longer than 40 seconds.The heatup and cooldown portions of the transient annealing cycle are found to have little effect on dopant redistribution provided that their rates are higher than 120 °C per second.

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Correlation between crystallinity and mid-infrared optical absorption spectra of silicon supersaturated with sulfur

MRS Proceedings ◽

10.1557/opl.2015.278 ◽

2015 ◽

Vol 1738 ◽

Author(s):

Ikurou Umezu ◽

Katsuki Nagao ◽

Tatsuya Nakai ◽

Muneyuki Naito ◽

Mitsuru Inada ◽

...

Keyword(s):

Optical Absorption ◽

Single Crystal ◽

Thermal Annealing ◽

Laser Fluence ◽

Annealing Temperature ◽

Pulsed Laser ◽

Single Crystal Substrate ◽

Laser Melting ◽

Mid Infrared ◽

Insulator Metal Transition

ABSTRACTWe prepared silicon hyperdoped with sulfur by ion-implantation followed by pulsed laser melting. Effects of laser fluence during pulsed laser melting and of post-annealing on the silicon hyperdoped with sulfur are investigated. The structure of hyperdoped layer changes from poly-to mono-crystal with increasing laser fluence. Interface between sulfur-implanted-layer and single-crystal substrate disappear above 1.1 J/cm2. The spectral intensity of mid-infrared (MIR) optical absorption increases with crystallinity and spectral shape depends on whether the melt depth during pulsed laser melting reaches interface between implanted layer and single-crystal silicon substrate or not. The MIR absorption intensity rapidly decreases with thermal annealing temperature and almost disappears at 750 °C. The activation energy of conductivity decreases with increasing laser fluence and further decreases with increasing post thermal-annealing temperature. The insulator-metal transition is observed for the sample annealed at 750 °C. These results indicate that there is no direct correlation between MIR optical absorption band and insulator-metal transition.

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High-Effective Ion-Implanted 6H-SiC Light Emitting Diodes with λmax=535nm

MRS Proceedings ◽

10.1557/proc-279-231 ◽

1992 ◽

Vol 279 ◽

Author(s):

A. V. Suvorov ◽

P. A. Ivanov ◽

V. N. Makarov ◽

D. A. Plotkin ◽

A. Ioffe

Keyword(s):

Thermal Annealing ◽

Annealing Temperature ◽

Light Emitting Diodes ◽

Light Power ◽

Light Emitting ◽

First Time ◽

Ion Implanted

ABSTRACTThe p-n structures was formed by the implantation of Al ions into 6H-SiC n-type films and the thermal annealing. An energy of ions was in the range of 40–90 KeV, an annealing temperature -1700–2100K. We investigated the influence of implantation conditions over the defects electroluminescence of the obtained structures.After fabricating contacts and mesa-structures with areas 500–500μm our devices showed under the current of 20 mW:- integral light power 20μW,- λmax=535 nm, δλmax=80nm.For the first time was fabricated the green electroluminescence source on SiC with the value of efficiency approximated to one of the A3B5 structures, and after encapsulating it will be possible to obtain LEDs with an integral light power up to 80–100μW.

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