scholarly journals SILICON CARBIDE POWER ELECTRONIC DEVICES TECHNOLOGY (OVERVIEW)

2018 ◽  
Vol 248 (1) ◽  
pp. 4-18
Author(s):  
V.A. Bespalov ◽  
◽  
N.A. Dyuzhev ◽  
B.K. Medvedev ◽  
◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electronic Devices ◽  
Power Electronic

scholarly journals ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS

2006 ◽  
Vol 16 (02) ◽  
pp. 545-556 ◽  
Author(s):  
BURAK OZPINECI ◽  
MADHU SUDHAN CHINTHAVALI ◽  
LEON M. TOLBERT
Keyword(s):  
Silicon Carbide ◽  
Field Strength ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic ◽  
Different Temperatures ◽  
Bandgap Semiconductors ◽  
Switching Characteristics ◽  
Unipolar Devices

Silicon carbide ( SiC ) unipolar devices have much higher breakdown voltages than silicon ( Si ) unipolar devices because of the ten times greater electric field strength of SiC compared with Si . 4H - SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H - SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

scholarly journals Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

2019 ◽  
Vol 9 (2) ◽  
pp. 1453
Author(s):  
Ramani Kannan ◽  
Saranya Krishnamurthy ◽  
Chay Che Kiong ◽  
Taib B Ibrahim
Keyword(s):  
Silicon Carbide ◽  
Dynamic Characteristics ◽  
Gamma Ray ◽  
Electronic Devices ◽  
Dose Effect ◽  
Power Electronic ◽  
Switching Speed ◽  
Power Mosfet ◽  
Power Mosfets ◽  
Gamma Ray Irradiation

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications

2005 ◽  
Vol 40 (10-11) ◽  
pp. 964-966
Author(s):  
C. F. Pirri ◽  
S. Porro ◽  
S. Ferrero ◽  
E. Celasco ◽  
S. Guastella ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Structural Characterization ◽  
Electronic Devices ◽  
Power Electronic

scholarly journals Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4176 ◽  
Author(s):  
Chaoqun Jiao ◽  
Juan Zhang ◽  
Zhibin Zhao ◽  
Zuoming Zhang ◽  
Yuanliang Fan
Keyword(s):  
Power Electronics ◽  
Printed Circuit Board ◽  
Electronic Devices ◽  
Rogowski Coil ◽  
Bipolar Transistors ◽  
Circuit Board ◽  
Power Electronic ◽  
Insulated Gate Bipolar Transistors ◽  
Printed Circuit ◽  
Internal Structures

With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.

scholarly journals New Sensor for Medium- and High-Voltage Measurement

Energies ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4654
Author(s):  
Andrzej Wetula ◽  
Andrzej Bień ◽  
Mrunal Parekh
Keyword(s):  
Finite Element Method ◽  
Electronic Devices ◽  
Finite Element Method Simulation ◽  
Laboratory Model ◽  
Power Electronic ◽  
Proof Of Concept ◽  
Voltage Measurement ◽  
Medium Voltage ◽  
Narrow Frequency Band ◽  
Further Development

Measurements of medium and high voltages in a power grid are normally performed with large and bulky voltage transformers or capacitive dividers. Besides installation problems, these devices operate in a relatively narrow frequency band, which limits their usability in modern systems that are saturated with power electronic devices. A sensor that can be installed directly on a wire and can operate without a galvanic connection to the ground may be used as an alternative voltage measurement device. This type of voltage sensor can complement current sensors installed on a wire, forming a complete power acquisition system. This paper presents such a sensor. Our sensor is built using two dielectric elements with different permeability coefficients. A finite element method simulation is used to estimate the parameters of a constructed sensor. Besides simulations, a laboratory model of a sensor was built and tested in a medium-voltage substation. Our results provide a proof of concept for the presented sensor. Some errors in voltage reconstruction have been traced to an oversimplified data acquisition and transmission system, which has to be improved during the further development of the sensor.

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