Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications

Silicon carbide ( SiC ) unipolar devices have much higher breakdown voltages than silicon ( Si ) unipolar devices because of the ten times greater electric field strength of SiC compared with Si . 4H - SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H - SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

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Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v9i2.pp1453-1460 ◽

2019 ◽

Vol 9 (2) ◽

pp. 1453

Author(s):

Ramani Kannan ◽

Saranya Krishnamurthy ◽

Chay Che Kiong ◽

Taib B Ibrahim

Keyword(s):

Silicon Carbide ◽

Dynamic Characteristics ◽

Gamma Ray ◽

Electronic Devices ◽

Dose Effect ◽

Power Electronic ◽

Switching Speed ◽

Power Mosfet ◽

Power Mosfets ◽

Gamma Ray Irradiation

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

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Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.711.134 ◽

2012 ◽

Vol 711 ◽

pp. 134-138 ◽

Cited By ~ 3

Author(s):

Ana Maria Beltran ◽

Sylvie Schamm-Chardon ◽

Vincent Mortet ◽

Mathieu Lefebvre ◽

Elena Bedel-Pereira ◽

...

Keyword(s):

Electron Mobility ◽

Electronic Devices ◽

Chemical Properties ◽

Electrical Characterization ◽

Power Electronic ◽

Layer Formation ◽

Transmission Electron ◽

P Type ◽

And Chemical Properties

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2interface are considered in relation with the measured low electron mobility of the MOSFETS.

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Mechanical and structural characterization of the Nicalon silicon carbide fibre

Journal of Materials Science ◽

10.1007/bf02396937 ◽

1984 ◽

Vol 19 (11) ◽

pp. 3649-3657 ◽

Cited By ~ 105

Author(s):

G. Simon ◽

A. R. Bunsell

Keyword(s):

Silicon Carbide ◽

Structural Characterization ◽

Silicon Carbide Fibre

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X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices

Journal of Electronic Materials ◽

10.1007/s11664-021-08762-6 ◽

2021 ◽

Author(s):

Yafei Liu ◽

Hongyu Peng ◽

Tuerxun Ailihumaer ◽

Balaji Raghothamachar ◽

Michael Dudley

Keyword(s):

Electronic Devices ◽

Power Electronic ◽

X Ray

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Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching

Materials Science Forum ◽

10.4028/www.scientific.net/msf.338-342.481 ◽

2000 ◽

Vol 338-342 ◽

pp. 481-484 ◽

Cited By ~ 3

Author(s):

T. Henkel ◽

Gabriel Ferro ◽

Shin Ichi Nishizawa ◽

H. Pressler ◽

Yasuhito Tanaka ◽

...

Keyword(s):

Silicon Carbide ◽

Ion Implantation ◽

Structural Characterization ◽

Chemical Etching ◽

Wet Chemical ◽

Wet Chemical Etching

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Modeling and Characterization of a Kinetic Energy Harvesting Device Based on Galfenol

Materials ◽

10.3390/ma12193199 ◽

2019 ◽

Vol 12 (19) ◽

pp. 3199 ◽

Cited By ~ 2

Author(s):

Carmine Stefano Clemente ◽

Daniele Davino

Keyword(s):

Energy Harvesting ◽

Permanent Magnets ◽

Electronic Devices ◽

Power Electronic ◽

Electrical Load ◽

Circuit Simulator ◽

Force Profile ◽

Conversion Performance ◽

Electrical Connections

The proposal of Energy Harvesting (EH) techniques and devices has experienced a significant growth over the last years, because of the spread of low power electronic devices. Small ambient energy quantities can be recovered through EH and exploited to power Wireless Sensor Networks (WSN) used, for example, for the Structural Health Monitoring (SHM) of bridges or viaducts. For this purpose, research on EH devices based on magnetostrictive materials has significantly grown in the last years. However, these devices comprise different parts, such as a mechanical system, magnetic circuit and electrical connections, which are coupled together. Then, a method able to reproduce the performance may be a handy tool. This paper presents a nonlinear equivalent circuit of a harvester, based on multiple rods of Galfenol, which can be solved with standard circuit simulator. The circuital parameters are identified with measurements both on one rod and on the whole device. The validation of the circuit and the analysis of the power conversion performance of the device have been conducted with different working conditions (force profile, typology of permanent magnets, resistive electrical load).

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