Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

The employment of 2D materials, as growth substrates or buffer layers, enables the epitaxial growth of layered materials with different crystalline symmetries with a preferential crystalline orientation and the synthesis of heterostructures with a large lattice constant mismatch.

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Epitaxial growth of large-area single-layer graphene over Cu(111)/sapphire by atmospheric pressure CVD

Carbon ◽

10.1016/j.carbon.2011.08.002 ◽

2012 ◽

Vol 50 (1) ◽

pp. 57-65 ◽

Cited By ~ 192

Author(s):

Baoshan Hu ◽

Hiroki Ago ◽

Yoshito Ito ◽

Kenji Kawahara ◽

Masaharu Tsuji ◽

...

Keyword(s):

Epitaxial Growth ◽

Atmospheric Pressure ◽

Single Layer ◽

Single Layer Graphene ◽

Large Area ◽

Layer Graphene

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Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071053 ◽

1973 ◽

Vol 31 ◽

pp. 122-123

Author(s):

J. S. Maa ◽

Thos. E. Hutchinson

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Microscopy Technique ◽

Direct Observations ◽

In Situ Electron Microscopy ◽

Beam Sputtering ◽

The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100114104 ◽

1975 ◽

Vol 33 ◽

pp. 96-97

Author(s):

R. W. Ditchfield ◽

A. G. Cullis

Keyword(s):

Epitaxial Growth ◽

Electron Energy ◽

Silicon Substrates ◽

Secondary Phases ◽

Si Substrates ◽

Transmission Electron ◽

Layer Structures ◽

Si Films ◽

Electron Energy Loss ◽

Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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AEM of reaction-bonded SiC

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100122125 ◽

1992 ◽

Vol 50 (1) ◽

pp. 344-345

Author(s):

K Das Chowdhury ◽

R. W. Carpenter ◽

W. Braue

Keyword(s):

Mechanical Properties ◽

Phase Transformation ◽

High Temperature ◽

Epitaxial Growth ◽

Liquid Silicon ◽

Structural Ceramic ◽

Few Data

Research on reaction-bonded SiC (RBSiC) is aimed at developing a reliable structural ceramic with improved mechanical properties. The starting materials for RBSiC were Si,C and α-SiC powder. The formation of the complex microstructure of RBSiC involves (i) solution of carbon in liquid silicon, (ii) nucleation and epitaxial growth of secondary β-SiC on the original α-SiC grains followed by (iii) β>α-SiC phase transformation of newly formed SiC. Due to their coherent nature, epitaxial SiC/SiC interfaces are considered to be segregation-free and “strong” with respect to their effect on the mechanical properties of RBSiC. But the “weak” Si/SiC interface limits its use in high temperature situations. However, few data exist on the structure and chemistry of these interfaces. Microanalytical results obtained by parallel EELS and HREM imaging are reported here.

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Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1999827 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-221-Pr8-228

Author(s):

E. de Paola ◽

P. Duverneuil ◽

A. Langlais ◽

M. Nguyen

Keyword(s):

Epitaxial Growth ◽

Atmospheric Pressure ◽

Barrel Reactor

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LIQUID PHASE EPITAXIAL GROWTH OF InxGa1-xAs/ InP NEAR SOLID INSTABILITY

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1982501 ◽

1982 ◽

Vol 43 (C5) ◽

pp. C5-3-C5-10 ◽

Cited By ~ 2

Author(s):

M. C. Joncour ◽

J. L. Benchimol ◽

J. Burgeat ◽

M. Quillec

Keyword(s):

Liquid Phase ◽

Epitaxial Growth ◽

Liquid Phase Epitaxial ◽

Liquid Phase Epitaxial Growth

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Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

MRS Proceedings ◽

10.1557/proc-606-181 ◽

1999 ◽

Vol 606 ◽

Cited By ~ 2

Author(s):

Keishi Nishio ◽

Jirawat Thongrueng ◽

Yuichi Watanabe ◽

Toshio Tsuchiya

Keyword(s):

Thin Film ◽

Thin Films ◽

Epitaxial Growth ◽

Raw Materials ◽

Substrate Surface ◽

Sol Gel ◽

Tungsten Bronze ◽

Monomethyl Ether ◽

Tetragonal Tungsten Bronze ◽

Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

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