Preparation and characterization of N doped P-type MgZnO film

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA)...

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Structural and electrical characterization of silicided Ni/Au contacts formed at low temperature (<300 °C) on p-type [001] silicon

Journal of Applied Physics ◽

10.1063/1.3670995 ◽

2011 ◽

Vol 110 (12) ◽

pp. 123510 ◽

Cited By ~ 6

Author(s):

A. Alberti ◽

P. Badalà ◽

G. Pellegrino ◽

A. Santangelo

Keyword(s):

Low Temperature ◽

Electrical Characterization ◽

P Type

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Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1415 ◽

2007 ◽

Vol 46 (4A) ◽

pp. 1415-1426 ◽

Cited By ~ 46

Author(s):

Shinsuke Miyajima ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Low Temperatures ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Hot Wire ◽

Nanocrystalline Silicon Carbide ◽

P Type

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Characterization of As-doped, p-type ZnO by x-ray absorption near-edge structure spectroscopy: Theory

Applied Physics Letters ◽

10.1063/1.2398895 ◽

2006 ◽

Vol 89 (22) ◽

pp. 222113 ◽

Cited By ~ 33

Author(s):

Sukit Limpijumnong ◽

M. F. Smith ◽

S. B. Zhang

Keyword(s):

Edge Structure ◽

X Ray ◽

P Type ◽

X Ray Absorption

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Magneto-Optical Characterization of the Nitrogen-Related Impurities in p-Type ZnSe Epilayers

phys stat sol (a) ◽

10.1002/1521-396x(200007)180:1<195::aid-pssa195>3.0.co;2-f ◽

2000 ◽

Vol 180 (1) ◽

pp. 195-199 ◽

Cited By ~ 1

Author(s):

L. Gravier ◽

H. Makino ◽

K. Arai ◽

H. Sasaki ◽

K. Kimura ◽

...

Keyword(s):

Optical Characterization ◽

Related Impurities ◽

P Type

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Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/6/328 ◽

2003 ◽

Vol 18 (6) ◽

pp. 554-559 ◽

Cited By ~ 24

Author(s):

F Moscatelli ◽

A Scorzoni ◽

A Poggi ◽

G C Cardinali ◽

R Nipoti

Keyword(s):

Ohmic Contacts ◽

Electrical Characterization ◽

P Type ◽

Ion Implanted

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Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791701 ◽

2002 ◽

Author(s):

S. Fatima ◽

J. Wong-Leung ◽

J. Fitzgerald ◽

C. Jagadish

Keyword(s):

Comparative Study ◽

Structural Characterization ◽

P Type

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Synthesis and Characterization of a p-Type Boron Arsenide Photoelectrode

Journal of the American Chemical Society ◽

10.1021/ja301765v ◽

2012 ◽

Vol 134 (27) ◽

pp. 11056-11059 ◽

Cited By ~ 47

Author(s):

Shijun Wang ◽

Sarah F. Swingle ◽

Heechang Ye ◽

Fu-Ren F. Fan ◽

Alan H. Cowley ◽

...

Keyword(s):

Synthesis And Characterization ◽

Boron Arsenide ◽

P Type

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