Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature

2007 ◽  
Vol 124-126 ◽  
pp. 263-266
Author(s):  
Nam Hoon Kim ◽  
Gwon Woo Choi ◽  
Yong Jin Seo ◽  
Woo Sun Lee
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Removal Rate ◽  
Optical Transmittance ◽  
Conditioning Process ◽  
Conditioning Temperature ◽  
Chemical Mechanical Polishing Process ◽  
Pad Conditioning

Indium tin oxide (ITO) CMP was performed by change of de-ionized water (DIW) temperature in pad conditioning process. DIW with high temperature was employed in pad conditioning immediately before ITO-CMP. The removal rate of ITO thin film polished by silica slurry immediately after pad conditioning process with the different DIW temperatures dramatically increased to 93.0 nm/min after pad conditioning at DIW of 75 oC, while that after the general conditioning process at 30 oC was about 66.1 nm/min. The grains of ITO thin film became indistinguishable by CMP after pad conditioning with the high-temperature DIW. The carrier density decreased with the increase of conditioning temperature. The hall mobility rapidly increased regardless of conditioning temperature. The uniformity of optical transmittance also improved.

Precision Recycle Module for Digital-Paper Display Using Twins-Cylinder Tool

2010 ◽  
Vol 428-429 ◽  
pp. 387-390
Author(s):  
Pai Shan Pa
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Feed Rate ◽  
Removal Rate ◽  
Small Diameter ◽  
Production Costs ◽  
High Rotational Speed ◽  
Digital Paper ◽  
Short Period

A new effective fabrication module was developed to mediate the problem of the low yield of Indium-tin-oxide (ITO) nanostructures deposition uses micro electroremoval technology and a design of twins-cylinder tool as a precision etching process to remove the defective Indium-tin-oxide (ITO) from the optical PET diaphragm surfaces of digital-paper displays. For the removal-process, a small gap width between the negative electrode and the workpiece (optical PET diaphragm) surface corresponds to a higher removal rate for the ITO. A small diameter of the anode or a small diameter of the cathode of the twins-cylinder tool provides large electric current density and takes less time for the same amount (20 nm) of ITO removal. High rotational speed of the twins-cylinder tool the discharge mobility and results in improving the removal effect. Providing enough electrical power can uses fast feed rate of the optical PET diaphragm combined with a fast removal rate for ITO. With increasing in current rating, pulsed direct current can improve the effect of dregs discharge and is advantageous to associate with the fast feed rate of the optical PET diaphragm. By establishing a recycling process using the ultra-precise removal of thin-film nanostructures, through the micro electroremoval and the twins-cylinder electrodes requires only a short period of time to remove the ITO thin-film easily and cleanly. The optoelectronic semiconductor industry can effectively recycle defective products, minimizing both production costs and pollution.

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

Reclamation of Polymer PET Substrate Using T-Form Tool

2009 ◽  
Vol 626-627 ◽  
pp. 1-4
Author(s):  
Pai Shan Pa
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Feed Rate ◽  
Removal Rate ◽  
Etching Rate ◽  
High Rotational Speed ◽  
Small Thickness ◽  
Short Period ◽  
Gap Width ◽  
Pet Substrate

In the current study, a reclamation module uses micro electroetching as a precision fabrication with a new design of T-form tool to remove the defective Indium-tin-oxide (TCO) nanostructure from the optical PET surfaces of digital paper display is presented in current studies. The adopted precision reclamation process requires only a short period of time to remove the TCO nanostructure easily and cleanly is based on technical and economical considerations and is highly efficient. A large rotational diameter of the cathode accompanied by a small gap width between the cathode and the workpiece corresponds to a higher removal rate for the TCO nanostructure. A small thickness of the electrodes, or a small edge radius of the electrodes takes less time for the same amount of TCO removal. A higher feed rate of the optical PET diaphragm combines with enough electric power to drive fast etching rate. High rotational speed of the T-form tool can improve the effect of dregs discharge and is advantageous to associate with the fast feed rate of the workpiece (optical PET diaphragm).

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

scholarly journals Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 137 ◽  
Author(s):  
Seung-Hun Lee ◽  
Kihwan Kwon ◽  
Kwanoh Kim ◽  
Jae Sung Yoon ◽  
Doo-Sun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Electronic Devices ◽  
Optical Transmittance ◽  
Plastic Substrate ◽  
Current Ratio ◽  
Vacancy Defects ◽  
Potential Applications

The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec−1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

2016 ◽  
Vol 63 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Xin Xu ◽  
Letao Zhang ◽  
Yang Shao ◽  
Zheyuan Chen ◽  
Yong Le ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film
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