Structural and Electrical Properties of High C-Orientation GaN Films on Diamond Substrates

2013 ◽  
Vol 662 ◽  
pp. 55-58
Author(s):  
Cheng Jiu Ma ◽  
Li Zhao ◽  
Tong Wei Yu ◽  
Xin Sun
Keyword(s):  
Electrical Property ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Hall Effect Measurement ◽  
Atomic Ratio ◽  
Organic Chemical ◽  
High Quality ◽  
Force Microscopy ◽  
Structural And Electrical Properties ◽  
Metal Organic

Preferred orientation GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N2 are applied as precursors and different N2 flux is used to achieve high quality GaN films. The influence of N2 flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD), atomic force microscopy (AFM), electron probe microanalysis (EPMA) and Hall Effect Measurement (HL). The results show that the high quality GaN films deposited at the proper N2 flux display a fine structural and electrical property and the Ga/N atomic ratio plays an important role in the electrical property of GaN films.

Deposition of GaN Films on Freestanding CVD Thick Diamond Films

2010 ◽  
Vol 654-656 ◽  
pp. 1740-1743 ◽  
Author(s):  
Dong Zhang ◽  
Yi Zhen Bai ◽  
Fu Wen Qin ◽  
Ji Ming Bian
Keyword(s):  
Electron Cyclotron Resonance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Energy ◽  
Organic Chemical ◽  
High Quality ◽  
Small Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic

High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.

Influence of TMGa Flux on the Improvement of GaN Films on Thick Freestanding Diamond Films

2013 ◽  
Vol 475-476 ◽  
pp. 1299-1302
Author(s):  
Shan Lin Cui ◽  
Hong Gang ◽  
Zheng Nian Li
Keyword(s):  
Electron Cyclotron Resonance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Small Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Trimethyl Gallium

High-quality GaN films are deposited on diamond films using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) under the condition of the proper Trimethyl gallium (TMGa) flux. The influence of TMGa flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The results show that the high quality GaN films with small surface roughness and high c-orientation are successfully achieved at the optimized flux. The most significant improvements in morphological and structural properties of GaN films are obtained by using a proper TMGa flux

scholarly journals Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1185
Author(s):  
Shuaijie Wang ◽  
Fuwen Qin ◽  
Yizhen Bai ◽  
Dong Zhang ◽  
Jingdan Zhang
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Deposition Temperature ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Hall Effect Measurement ◽  
High Energy ◽  
Organic Chemical ◽  
Structural And Electrical Properties ◽  
Metal Organic

The progress of InN semiconductors is still in its infancy compared to GaN-based devices and materials. Herein, InN thin films were grown on self-standing diamond substrates using low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) with inert N2 used as a nitrogen source. The thermal conductivity of diamond substrates makes the as-grown InN films especially attractive for various optoelectronic applications. Structural and electrical properties which depend on deposition temperature were systematically investigated by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurement. The results indicated that the quality and properties of InN films were significantly influenced by the deposition temperature, and InN films with highly c-axis preferential orientation and surface morphology were obtained at optimized temperatures of 400 °C. Moreover, their electrical properties with deposition temperature were studied, and their tendency was correlated with the dependence on micro- structure and morphology.

scholarly journals Growth of High-Quality GaN Films on Epitaxial AlN/Sapphire Templates

2019 ◽  
Author(s):  
Xiejia
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Rocking Curve ◽  
Force Microscopy ◽  
Atomic Force ◽  
Low Dislocation Density ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Microscopy Images

High quality GaN films have been successfully grown on multi-AlN/sapphire templates by metal organic chemical vapor deposition system. The Hall mobility and the carrier concentration of 720 cm2/Vs and 6.7x1016 cm-3 at 300K, respectively, along with low dislocation density of 4.1x109 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 160 and 290 arcsec for (0004) and (20-24) reflection planes also obtained, respectively. Besides that, the atomic force microscopy images showed smooth surface morphology and a higher intensity near the band edge was also observed by photoluminescence measurement result.

Effect of Temperature on GaN Films Deposited on Diamond Substrate Using an ECR-PEMOCVD

2013 ◽  
Vol 475-476 ◽  
pp. 1303-1306
Author(s):  
Chang Qing Liu ◽  
Peng Qiu ◽  
Zhong Fei Gao ◽  
Bao Zhong Gan
Keyword(s):  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Effect Of Temperature ◽  
Organic Chemical ◽  
Free Standing ◽  
Force Microscopy ◽  
Diamond Substrate ◽  
Influence Of Temperature On ◽  
Metal Organic ◽  
Trimethyl Gallium

Highly-quality GaN films were deposited on diamond substrate using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) at the proper temperature. The source of gallium is Trimethyl gallium (TMGa) and N2, and the influence of temperature on the properties of GaN films was investigated systematically by X-ray diffraction analysis (XRD), atomic force microscopy (AFM), room temperature photoluminescence (PL), respectively. The dense and uniformed GaN films with highly c-axis preferred orientation were successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 °C.

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 1014 ◽  
pp. 22-26
Author(s):  
Yi Zhuo ◽  
Zi Min Chen ◽  
Sheng Dong Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this work, In2O3 thin films were grown on (111) yttria-stabilized zirconia (YSZ) by metal-organic chemical vapor deposition (MOCVD) at different temperature. It is found that samples grown at low temperature showed lower residual stress but higher mosaicity while high growth temperatures could also cause deterioration in crystal quality due to increasing lattice mismatch. To obtain high quality In2O3 film with low residual strain, a 30-nm thick layer grown at 530 °C was introduced as buffer layer, considering both stress relaxation and crystalline mosaicity. By using two-step growth method, a 400 nm-thick, high quality, near-strain-free In2O3 thin film with the full width at half maximum (FWHM) values of (222) diffraction peaks being as narrow as 648 arcsec was successfully obtained.

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