Effect of Temperature on GaN Films Deposited on Diamond Substrate Using an ECR-PEMOCVD

2013 ◽  
Vol 475-476 ◽  
pp. 1303-1306
Author(s):  
Chang Qing Liu ◽  
Peng Qiu ◽  
Zhong Fei Gao ◽  
Bao Zhong Gan
Keyword(s):  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Effect Of Temperature ◽  
Organic Chemical ◽  
Free Standing ◽  
Force Microscopy ◽  
Diamond Substrate ◽  
Influence Of Temperature On ◽  
Metal Organic ◽  
Trimethyl Gallium

Highly-quality GaN films were deposited on diamond substrate using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) at the proper temperature. The source of gallium is Trimethyl gallium (TMGa) and N2, and the influence of temperature on the properties of GaN films was investigated systematically by X-ray diffraction analysis (XRD), atomic force microscopy (AFM), room temperature photoluminescence (PL), respectively. The dense and uniformed GaN films with highly c-axis preferred orientation were successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 °C.

Influence of TMGa Flux on the Improvement of GaN Films on Thick Freestanding Diamond Films

2013 ◽  
Vol 475-476 ◽  
pp. 1299-1302
Author(s):  
Shan Lin Cui ◽  
Hong Gang ◽  
Zheng Nian Li
Keyword(s):  
Electron Cyclotron Resonance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Small Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Trimethyl Gallium

High-quality GaN films are deposited on diamond films using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) under the condition of the proper Trimethyl gallium (TMGa) flux. The influence of TMGa flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The results show that the high quality GaN films with small surface roughness and high c-orientation are successfully achieved at the optimized flux. The most significant improvements in morphological and structural properties of GaN films are obtained by using a proper TMGa flux

Deposition of GaN Films on Freestanding CVD Thick Diamond Films

2010 ◽  
Vol 654-656 ◽  
pp. 1740-1743 ◽  
Author(s):  
Dong Zhang ◽  
Yi Zhen Bai ◽  
Fu Wen Qin ◽  
Ji Ming Bian
Keyword(s):  
Electron Cyclotron Resonance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Energy ◽  
Organic Chemical ◽  
High Quality ◽  
Small Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic

High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.

Structural and Electrical Properties of High C-Orientation GaN Films on Diamond Substrates

2013 ◽  
Vol 662 ◽  
pp. 55-58
Author(s):  
Cheng Jiu Ma ◽  
Li Zhao ◽  
Tong Wei Yu ◽  
Xin Sun
Keyword(s):  
Electrical Property ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Hall Effect Measurement ◽  
Atomic Ratio ◽  
Organic Chemical ◽  
High Quality ◽  
Force Microscopy ◽  
Structural And Electrical Properties ◽  
Metal Organic

Preferred orientation GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N2 are applied as precursors and different N2 flux is used to achieve high quality GaN films. The influence of N2 flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD), atomic force microscopy (AFM), electron probe microanalysis (EPMA) and Hall Effect Measurement (HL). The results show that the high quality GaN films deposited at the proper N2 flux display a fine structural and electrical property and the Ga/N atomic ratio plays an important role in the electrical property of GaN films.

scholarly journals GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

2012 ◽  
Vol 2 (1) ◽  
pp. 1
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
Abd. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Self ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

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