Design and Construction the RF Ion Source for Compact Accelerator with 30 keV Energy

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.891.263 ◽

2019 ◽

Vol 891 ◽

pp. 263-268

Author(s):

Keratiya Janpong

Keyword(s):

Ion Beam ◽

Particle Beam ◽

Ion Source ◽

Drift Space ◽

Cold Cathodes ◽

Rf Ion Source ◽

Electrode Method ◽

Rf Antenna ◽

Hot Filament ◽

Zero Voltage

In constructing the low energy accelerator for plant modification the most important part is the ion source. In the conventional cold cathodes and hot filament ion source methods the filament continuously burns out over time, has a shorter lifespan and requires venting of the ion source to atmosphere. Henceforth the Radio frequency (RF) antenna ion source or “non-thermionic ion source” with 13.6 MHz was used in the accelerator as well as it being easy to generate varie the plasma souce and stability. This ion source can produce a particle beam of about ~30 to 40 mA current. The ion particle was extracted by the first zero voltage extraction rod electrode method focusing the ion beam of 0-30 kV with the second rod electrode after which the third rod electrode has zero voltage. In calculating and designing this system via the Simion8.0 Program, the result showed that the Ar+ ion beam with 30 keV can be focused with 1 cm diameter beam at the distance of 10 cm of the drift space.

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Characterization of the Ion Beam Current Density of the RF Ion Source with Flat and Convex Extraction Systems

Silicon ◽

10.1007/s12633-018-9815-2 ◽

2018 ◽

Vol 10 (6) ◽

pp. 2743-2749 ◽

Cited By ~ 2

Author(s):

Maryam Salehi ◽

Ali Asghar Zavarian ◽

Ali Arman ◽

Fatemeh Hafezi ◽

Ghasem Amraee Rad ◽

...

Keyword(s):

Current Density ◽

Ion Beam ◽

Beam Current ◽

Ion Source ◽

Beam Current Density ◽

Rf Ion Source

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Ion-beam extraction with single hole extractor from multiantenna rf ion source in NIFS

Review of Scientific Instruments ◽

10.1063/1.2165772 ◽

2006 ◽

Vol 77 (3) ◽

pp. 03B506 ◽

Cited By ~ 1

Author(s):

Y. Oka ◽

K. Ikeda ◽

O. Kaneko ◽

K. Nagaoka ◽

M. Osakabe ◽

...

Keyword(s):

Ion Beam ◽

Ion Source ◽

Beam Extraction ◽

Single Hole ◽

Rf Ion Source

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A note on ion beam extraction from an RF ion source

Nuclear Instruments and Methods ◽

10.1016/s0029-554x(79)90425-7 ◽

1979 ◽

Vol 158 ◽

pp. 51-56

Author(s):

G.J. Witteveen

Keyword(s):

Ion Beam ◽

Ion Source ◽

Beam Extraction ◽

Rf Ion Source

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Growth of Carbon-Nitrogen Films with a Broad Beam RF Ion Source

MRS Proceedings ◽

10.1557/proc-693-i3.2.1 ◽

2001 ◽

Vol 693 ◽

Cited By ~ 3

Author(s):

David C. Ingram ◽

William C. Lanter ◽

Charles A. DeJoseph ◽

Asghar Kayani

Keyword(s):

Ion Beam ◽

Ion Source ◽

Elastic Recoil ◽

Carbon And Nitrogen ◽

Insulating Films ◽

Native Oxides ◽

Growth Mechanics ◽

Rf Ion Source ◽

Device Applications ◽

Composition Properties

AbstractWith the lack of suitable native oxides, gallium nitride based semiconductor devices will need other materials for dielectric, insulating and passivating layers in a variety of device applications. A carbon-nitrogen film is a possible candidate for this application. Insulating films can be made of this material with a variety of techniques. Ion beam techniques are a well accepted way to demonstrate the existence of a material with certain properties and a way to establish the range of those properties in the material. Ion beam assisted deposition has been used in this work to fabricate materials with various stoichiometries in order to determine the range of properties available for this material.Thin films containing predominantly carbon and nitrogen have been grown using a mixture of methane and nitrogen from a 20 cm rf ion source. The stoichiometry of the films has been measured with Rutherford Backscattering Spectroscopy (RBS), and Elastic Recoil Spectroscopy (ERS). The effect of nitrogen-to-methane ratio, ion energy, and RF power on the film composition, properties, and growth rate is reported together with an analysis of the anticipated growth mechanics.

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Nucleation and Early Growth of Sputtered thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069570 ◽

1970 ◽

Vol 28 ◽

pp. 516-517

Author(s):

Dudley M. Sherman ◽

Thos. E. Hutchinson

Keyword(s):

Thin Films ◽

Electron Beam ◽

Ion Beam ◽

Ion Source ◽

Water Cooling ◽

Stages Of Growth ◽

Lens Assembly ◽

Microscope Technique ◽

Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0397 ◽

2016 ◽

Author(s):

Valery Ray ◽

Josef V. Oboňa ◽

Sharang Sharang ◽

Lolita Rotkina ◽

Eddie Chang ◽

...

Keyword(s):

Inductively Coupled Plasma ◽

Structural Damage ◽

Focused Ion Beam ◽

Ion Beam ◽

Beam Width ◽

Ion Source ◽

Reconstruction Technique ◽

Beam Diameter ◽

Current Profile ◽

Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

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Charged particle single nanometre manufacturing

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.9.266 ◽

2018 ◽

Vol 9 ◽

pp. 2855-2882 ◽

Cited By ~ 1

Author(s):

Philip D Prewett ◽

Cornelis W Hagen ◽

Claudia Lenk ◽

Steve Lenk ◽

Marcus Kaestner ◽

...

Keyword(s):

Charged Particle ◽

High Throughput ◽

Nanoimprint Lithography ◽

Ion Beam ◽

Ambient Air ◽

Particle Beam ◽

Vacuum System ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Charged Particle Beam

Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

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