Growth of Carbon-Nitrogen Films with a Broad Beam RF Ion Source

AbstractWith the lack of suitable native oxides, gallium nitride based semiconductor devices will need other materials for dielectric, insulating and passivating layers in a variety of device applications. A carbon-nitrogen film is a possible candidate for this application. Insulating films can be made of this material with a variety of techniques. Ion beam techniques are a well accepted way to demonstrate the existence of a material with certain properties and a way to establish the range of those properties in the material. Ion beam assisted deposition has been used in this work to fabricate materials with various stoichiometries in order to determine the range of properties available for this material.Thin films containing predominantly carbon and nitrogen have been grown using a mixture of methane and nitrogen from a 20 cm rf ion source. The stoichiometry of the films has been measured with Rutherford Backscattering Spectroscopy (RBS), and Elastic Recoil Spectroscopy (ERS). The effect of nitrogen-to-methane ratio, ion energy, and RF power on the film composition, properties, and growth rate is reported together with an analysis of the anticipated growth mechanics.

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Characterization of the Ion Beam Current Density of the RF Ion Source with Flat and Convex Extraction Systems

Silicon ◽

10.1007/s12633-018-9815-2 ◽

2018 ◽

Vol 10 (6) ◽

pp. 2743-2749 ◽

Cited By ~ 2

Author(s):

Maryam Salehi ◽

Ali Asghar Zavarian ◽

Ali Arman ◽

Fatemeh Hafezi ◽

Ghasem Amraee Rad ◽

...

Keyword(s):

Current Density ◽

Ion Beam ◽

Beam Current ◽

Ion Source ◽

Beam Current Density ◽

Rf Ion Source

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Ion-beam extraction with single hole extractor from multiantenna rf ion source in NIFS

Review of Scientific Instruments ◽

10.1063/1.2165772 ◽

2006 ◽

Vol 77 (3) ◽

pp. 03B506 ◽

Cited By ~ 1

Author(s):

Y. Oka ◽

K. Ikeda ◽

O. Kaneko ◽

K. Nagaoka ◽

M. Osakabe ◽

...

Keyword(s):

Ion Beam ◽

Ion Source ◽

Beam Extraction ◽

Single Hole ◽

Rf Ion Source

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Design and Construction the RF Ion Source for Compact Accelerator with 30 keV Energy

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.891.263 ◽

2019 ◽

Vol 891 ◽

pp. 263-268

Author(s):

Keratiya Janpong

Keyword(s):

Ion Beam ◽

Particle Beam ◽

Ion Source ◽

Drift Space ◽

Cold Cathodes ◽

Rf Ion Source ◽

Electrode Method ◽

Rf Antenna ◽

Hot Filament ◽

Zero Voltage

In constructing the low energy accelerator for plant modification the most important part is the ion source. In the conventional cold cathodes and hot filament ion source methods the filament continuously burns out over time, has a shorter lifespan and requires venting of the ion source to atmosphere. Henceforth the Radio frequency (RF) antenna ion source or “non-thermionic ion source” with 13.6 MHz was used in the accelerator as well as it being easy to generate varie the plasma souce and stability. This ion source can produce a particle beam of about ~30 to 40 mA current. The ion particle was extracted by the first zero voltage extraction rod electrode method focusing the ion beam of 0-30 kV with the second rod electrode after which the third rod electrode has zero voltage. In calculating and designing this system via the Simion8.0 Program, the result showed that the Ar+ ion beam with 30 keV can be focused with 1 cm diameter beam at the distance of 10 cm of the drift space.

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A note on ion beam extraction from an RF ion source

Nuclear Instruments and Methods ◽

10.1016/s0029-554x(79)90425-7 ◽

1979 ◽

Vol 158 ◽

pp. 51-56

Author(s):

G.J. Witteveen

Keyword(s):

Ion Beam ◽

Ion Source ◽

Beam Extraction ◽

Rf Ion Source

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UPTAKE OF LIGHT ELEMENTS IN THIN METALLIC FILMS

Modern Physics Letters B ◽

10.1142/s0217984901003305 ◽

2001 ◽

Vol 15 (28n29) ◽

pp. 1382-1390

Author(s):

ANDREAS MARKWITZ ◽

MATHIAS WALDSCHMIDT

Keyword(s):

Diffusion Processes ◽

Limit Of Detection ◽

Ion Beam ◽

Thin Layers ◽

Double Layers ◽

Nuclear Reaction Analysis ◽

Metallic Films ◽

Elastic Recoil ◽

Carbon And Nitrogen ◽

Depth Profiles

Ion beam analysis was used to investigate the influence of substrate temperature on the inclusion of impurities during the deposition process of thin metallic single and double layers. Thin layers of gold and aluminium were deposited at different temperatures onto thin copper layers evaporated on silicon wafer substrates. The uptake of oxygen in the layers was measured using the highly sensitive non-resonant reaction 16 O(d,p) 170 O at 920 keV. Nuclear reaction analysis was also used to probe for carbon and nitrogen with a limit of detection better than 20 ppm. Hydrogen depth profiles were measured using elastic recoil detection on the nanometer scale. Rutherford backscattering spectroscopy was used to determine the depth profiles of the metallic layers and to study diffusion processes. The combined ion beam analyses revealed an uptake of oxygen in the layers depending on the different metallic cap layers and the deposition temperature. Lowest oxygen values were measured for the Au/Cu layers, whereas the highest amount of oxygen was measured in Al/Cu layers deposited at 300°C. It was also found that with single copper layers produced at various temperatures, oxygen contamination occurred during the evaporation process and not afterwards, for example, as a consequence of the storage of the films under normal conditions for several days. Hydrogen, carbon, and nitrogen were found as impurities in the single and double layered metallic films, a finding that is in agreement with the measured oxidation behaviour of the metallic films.

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Nucleation and Early Growth of Sputtered thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069570 ◽

1970 ◽

Vol 28 ◽

pp. 516-517

Author(s):

Dudley M. Sherman ◽

Thos. E. Hutchinson

Keyword(s):

Thin Films ◽

Electron Beam ◽

Ion Beam ◽

Ion Source ◽

Water Cooling ◽

Stages Of Growth ◽

Lens Assembly ◽

Microscope Technique ◽

Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0397 ◽

2016 ◽

Author(s):

Valery Ray ◽

Josef V. Oboňa ◽

Sharang Sharang ◽

Lolita Rotkina ◽

Eddie Chang ◽

...

Keyword(s):

Inductively Coupled Plasma ◽

Structural Damage ◽

Focused Ion Beam ◽

Ion Beam ◽

Beam Width ◽

Ion Source ◽

Reconstruction Technique ◽

Beam Diameter ◽

Current Profile ◽

Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

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