Electrical and Optical Properties of Indium and Aluminium Doped Zinc Oxide Films Prepared by RF Magnetron Sputtering

ZnO: In (IZO, 10wt % In2O3) and ZnO: Al (AZO, 1wt % Al2O3) films were deposited on Corning glass substrates by RF magnetron sputtering. The samples were either prepared on unheated substrates and post annealed in N2 at different temperatures, or prepared at elevated temperatures. Electrical, optical and structural properties were investigated as a function of deposition temperature and annealing temperature. Increasing the substrate heater temperature would lead to a decline in the electrical conductivity of IZO films, while AZO films showed unchanged performance in the substrate heater temperature range of 150 - 300°C. Post annealing appears to be an effective way to improve the electrical properties of both IZO and AZO films without sacrificing transparency. In this work, AZO films have higher conductivity and light transmission than IZO films.

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Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽

10.3390/cryst11101183 ◽

2021 ◽

Vol 11 (10) ◽

pp. 1183

Author(s):

Peiyu Wang ◽

Xin Wang ◽

Fengyin Tan ◽

Ronghua Zhang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Deposition Rate ◽

Deposition Temperature ◽

Energy Dispersive Spectrometer ◽

Rf Magnetron Sputtering ◽

Glass Substrates ◽

Different Temperatures ◽

Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

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NO2 Sensing Properties of WO3 Thin Films Deposited by Rf-Magnetron Sputtering

Conference Papers in Science ◽

10.1155/2014/683219 ◽

2014 ◽

Vol 2014 ◽

pp. 1-5

Author(s):

Savita Sharma ◽

Monika Tomar ◽

Nitin K. Puri ◽

Vinay Gupta

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Gas Sensing ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

Sensing Properties ◽

Glass Substrates ◽

Corning Glass ◽

Interdigital Electrodes ◽

Wo3 Thin Films

Tungsten trioxide (WO3) thin films were deposited by Rf-magnetron sputtering onto Pt interdigital electrodes fabricated on corning glass substrates. NO2 gas sensing properties of the prepared WO3 thin films were investigated by incorporation of catalysts (Sn, Zn, and Pt) in the form of nanoclusters. The structural and optical properties of the deposited WO3 thin films have been studied by X-ray diffraction (XRD) and UV-Visible spectroscopy, respectively. The gas sensing characteristics of all the prepared sensor structures were studied towards 5 ppm of NO2 gas. The maximum sensing response of about 238 was observed for WO3 film having Sn catalyst at a comparatively lower operating temperature of 200°C. The possible sensing mechanism has been highlighted to support the obtained results.

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EFFECT OF THICKNESS ON THE PROPERTIES OF In-DOPED ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

International Journal of Modern Physics B ◽

10.1142/s0217979211058365 ◽

2011 ◽

Vol 25 (07) ◽

pp. 995-1003 ◽

Cited By ~ 5

Author(s):

L. P. PENG ◽

L. FANG ◽

X. F. YANG ◽

Q. L. HUANG ◽

F. WU ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Film Thickness ◽

Visible Region ◽

Hexagonal Wurtzite Structure ◽

Rf Magnetron Sputtering ◽

Transparent Electrode ◽

Visible Range ◽

Electrical And Optical Properties ◽

Glass Substrates

In-doped zinc oxide ( ZnO:In ) thin films with thickness from 157 nm to 592 nm have been deposited on glass substrates by radio frequency (RF) magnetron sputtering. The effect of the film thickness on the structural, electrical and optical properties of ZnO:In thin films has been investigated. It is found that the films are hexagonal wurtzite structure with c-axis perpendicular to the substrate, and with increasing thickness, the crystallinity, the grains size and the conductivity of the films increases, but the strains along c-axis and the transmittance decrease. The decrease of the resistivity in a thicker film is attributed to the slight increase of the carrier concentration and the significant increase of Hall mobility. The transmittance of all the films is over 80% in the visible region (400–800 nm) and the band gap decrease with the increase of film thickness. The film with the thickness of around 303 nm has the resistivity of 6.07 × 10-3 Ω⋅ cm and the transmittance of 90% in the visible range. Based on the good conductivity and high transmittance, the ZnO:In films prepared by magnetron sputtering can be regarded as a potential transparent electrode.

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Effect of Substrate Temperature on the Opto-Electrical Propertites of Ti Doped ITO Films Deposited by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.602-604.1399 ◽

2012 ◽

Vol 602-604 ◽

pp. 1399-1403

Author(s):

Rui Xin Ma ◽

Shi Na Li ◽

Guo Quan Suo

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Absorption Edge ◽

Blue Shift ◽

Rf Magnetron Sputtering ◽

Electrical And Optical Properties ◽

Glass Substrates ◽

Visible Wavelengths

Ti doped ITO (ITO:Ti) thin films were fabricated on glass substrates by RF magnetron sputtering using only one piece of ITO:Ti ceramic target at different substrate temperature (Ts). The effect of substrate temperature on structural, electrical, and optical properties of the films was investigated. It is confirmed that the resistivity of the films decreases with the increase of Ts till the minimum value of 2.5×10-4 Ω•cm and the transmittance in visible wavelengths is higher than 90%. "Blue shift" and "red shift" of UV absorption edge of the film were observed when Ts200 °CHeaders and footers

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Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.687.70 ◽

2011 ◽

Vol 687 ◽

pp. 70-74

Author(s):

Cheng Hsing Hsu ◽

His Wen Yang ◽

Jenn Sen Lin

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Visible Region ◽

Rf Magnetron Sputtering ◽

Rf Power ◽

Electrical And Optical Properties ◽

Glass Substrates ◽

Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

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