Variation of Color in Zirconium Nitride Thin Films Prepared by Reactive DC Magnetron Sputtering

2011 ◽  
Vol 214 ◽  
pp. 320-324 ◽  
Author(s):  
Pattarinee Klumdoung ◽  
Piyapong Asanithi ◽  
Surasing Chaiyakun ◽  
Pichet Limsuwan
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Deposition Time ◽  
Color Variation ◽  
Zirconium Nitride ◽  
Dc Magnetron Sputtering ◽  
Small Interval ◽  
Flow Rates ◽  
N2 Flow Rate

This study is to evaluate a color variation of the zirconium nitride thin film, prepared from deposition technique of different N2 flow rates, ranging from 0.0 to 3.0 sccm, whereas the Ar flow rate is fixed at 3 sccm. The thin film was deposited on an unheated silicon wafer (100) via a reactive DC magnetron sputtering. The deposition current and deposition time were 0.6 A and 15 minutes, respectively. In the study, colors of film were changed from silver, gold, dark brown, brown, purple, pink to blue, when N2 flow rate further increase. Interestingly, the results indicate that gold color occurs in a very small interval of N2 flow rate.

Effect Analysis of Ar-N2 Flow Rates on ZrNX Film by Pulsed Magnetron Sputtering Using Design of Experimental Method

2011 ◽  
Vol 194-196 ◽  
pp. 2491-2498 ◽  
Author(s):  
Hung Jiun Wen ◽  
Fuh Liang Wen ◽  
Kuo Hwa Chang ◽  
C.H. Wen ◽  
Yu Lin Lo
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Chemical Elements ◽  
Zirconium Nitride ◽  
Chamber Pressure ◽  
Nitride Film ◽  
Nitrogen Gas ◽  
Effect Analysis ◽  
Flow Rates

The various nitrogen gas (N2) flows for depositing zirconium-nitride (ZrN) films on the substrate of a p-type (100) silicon wafer are investigated through reactive magnetron sputtering by a pulsed-DC power. The results, based on the design of experimental (DOE) method, indicate that the deposition effect of the ZrNx film is obviously affected by various flow rates of nitrogen gas at the specific pulsing duty cycles. The crystal orientation of the zirconium-nitride film has a less order microstructure which is similar to an amorphous microstructure. Although the composition ratio of chemical elements is not identical in Zr and N, the surface roughness, grain size, and resistivity are the better feature. The deposition rate is inversely proportional to the nitrogen flow rate and the chamber pressure is also an important factor. The basic effect of N2 flow rate on the surface roughness is rougher when more nitrogen gas is supplied. The resistivity of ZrNx thin film has a positive relationship to N2 flow rates at the reactive vacuum chamber.

scholarly journals Impact of Ar Flow Rates on Micro-Structural Properties of WS2 Thin Film by RF Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1635
Author(s):  
Md. Akhtaruzzaman ◽  
Md. Shahiduzzaman ◽  
Nowshad Amin ◽  
Ghulam Muhammad ◽  
Mohammad Aminul Islam ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Gas Flow Rate ◽  
Flow Rates ◽  
Ar Gas

Tungsten disulfide (WS2) thin films were deposited on soda-lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The effect of Ar flow rates on the structural, morphology, and electrical properties of the WS2 thin films was investigated thoroughly. Structural analysis exhibited that all the as-grown films showed the highest peak at (101) plane corresponds to rhombohedral phase. The crystalline size of the film ranged from 11.2 to 35.6 nm, while dislocation density ranged from 7.8 × 1014 to 26.29 × 1015 lines/m2. All these findings indicate that as-grown WS2 films are induced with various degrees of defects, which were visible in the FESEM images. FESEM images also identified the distorted crystallographic structure for all the films except the film deposited at 5 sccm of Ar gas flow rate. EDX analysis found that all the films were having a sulfur deficit and suggested that WS2 thin film bears edge defects in its structure. Further, electrical analysis confirms that tailoring of structural defects in WS2 thin film can be possible by the varying Ar gas flow rates. All these findings articulate that Ar gas flow rate is one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties, and structural properties of WS2 thin film. Finally, the simulation study validates the experimental results and encourages the use of WS2 as a buffer layer of CdTe-based solar cells.

scholarly journals Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 937
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Crystal Size ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
N2 Flow Rate

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Deposition and Characterization of Aluminium Thin film Coatings using DC Magnetron Sputtering Process

2018 ◽  
Vol 5 (1) ◽  
pp. 2696-2704 ◽  
Author(s):  
M. Muralidhar Singh ◽  
G. Vijaya ◽  
M.S. Krupashankara ◽  
B.K. Sridhara ◽  
T.N. Shridhar
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Film Coatings ◽  
Thin Film Coatings

Effects of sputtering power toward the Al-doped ZnO thin Film prepared by pulsed DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6466-6471 ◽  
Author(s):  
Kittikhun Seawsakul ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Pattantsetakul ◽  
Saksorn Limwichean ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Zno Thin Film ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Sputtering Power ◽  
Doped Zno ◽  
Pulsed Dc Magnetron Sputtering

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

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