scholarly journals Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 937
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Crystal Size ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
N2 Flow Rate

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

Influence of N2 Flows on Sputtered Ta(N) films: Electrical, Structural, Chemical and Optical Properties

2021 ◽  
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Crystal Size ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
N2 Flow Rate

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with a different N2 flow rate of 0, 12, 17, 25, 38, 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of the N2 flows. On the other hand, the resistivity increases, the crystal size decreases, and the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5 (130,040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, and dependent on the crystal size and crystal phase structure.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

scholarly journals Fabrication and Characterization of Al/NiO Energetic Nanomultilayers

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
YiChao Yan ◽  
Wei Shi ◽  
HongChuan Jiang ◽  
Jie Xiong ◽  
WanLi Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Metallic Oxide ◽  
Promising Candidate ◽  
X Ray ◽  
Thermal Boundary Conductance ◽  
Fabrication And Characterization

The redox reaction between Al and metallic oxide has its advantage compared with intermetallic reaction and Al/NiO nanomutlilayers are a promising candidate for enhancing the performance of energetic igniter. Al/NiO nanomutlilayers with different modulation periods are prepared on alumina substrate by direct current (DC) magnetron sputtering. The thicknesses of each period are 250 nm, 500 nm, 750 nm, 1000 nm, and 1500 nm, respectively, and the total thickness is 3 μm. The X-ray diffraction (XRD) and scanning electron microscope (SEM) results of the as-deposited Al/NiO nanomutlilayers show that the NiO films are amorphous and the layered structures are clearly distinguished. The X-ray photoelectron spectroscopy (XPS) demonstrates that the thickness of Al2O3increases on the side of Al monolayer after annealing at 450°C. The thermal diffusion time becomes greater significantly as the amount of thermal boundary conductance across the interfaces increases with relatively smaller modulation period. Differential scanning calorimeter (DSC) curve suggests that the energy release per unit mass is below the theoretical heat of the reaction due to the nonstoichiometric ratio between Al and NiO and the presence of impurities.

Analysis of Optical Properties and Structure for CdS Films

2005 ◽  
Vol 475-479 ◽  
pp. 3721-3724
Author(s):  
W.L. Wang ◽  
K.J. Liao ◽  
Jian Zhang ◽  
P. Yu ◽  
G.B. Liu
Keyword(s):  
Optical Properties ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Annealing Treatment ◽  
Oxide Content ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Transparent Glass ◽  
X Ray ◽  
Cds Films

In this paper, the optical properties and structure of CdS films were investigated by SEM, X-ray diffraction, and x-ray photoelectron spectroscopy. The CdS films in this study were deposited on the plane transparent glass by chemical bath deposition technique. The experimental results have shown that the annealing treatment has an important effect on the optical properties and structure of CdS films. This may be ascribed to decreasing surface contaminations and oxide content in the films.

Crystal Structure of K6Nb44O113 from HREM

1990 ◽  
Vol 48 (1) ◽  
pp. 42-43
Author(s):  
F.H. Li ◽  
C.M. Teng ◽  
J.J. Hu ◽  
F. Nagata ◽  
C. Tsuruta
Keyword(s):  
Crystal Structure ◽  
Electron Diffraction ◽  
Crystal Size ◽  
Fold Axis ◽  
Structure Model ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tetragonal System ◽  
Small Crystal Size ◽  
Different Shapes

Different results about the crystal structure of K6Nb44O113 (KNO) were obtained by X-ray diffraction analysis[1,2]. This might be due to the small crystal size and the impurity of crystalline powders. Such sample are suitable for HREM investigation. Teng et al. studied the crystal by electron diffraction and HREM[3]. They compared the image of KNO with the structure model of Rb3Nb54O146(RNO) proposed by Gatehouse et al.[4]. The latter’s structure which is formed by Nb-O octahedra belongs to the tetragonal system and contains tunnels of different shapes along the four-fold axis(Fig.1). An image of KNO given by Teng et al. shows four-leaf and three-leaf shaped bright dots whose arrangement is in agreement with that of heptagonal and hexagonal tunnels in the structure of RNO respectively. Although Teng et al. proposed that the crystal structure of KNO might also be formed by Nb-O octahedra and contains various tunnels as RNO, they concluded that the symmetry of KNO should be lower than that of RNO. In this abstract it is reported that the crystal structure of KNO is isomorphic to that of RNO as well as that of CsxNb54(O,F)146[5].

Facile deposition of carbon-doped TiO2 films by two-electrode electrodeposition setup

2021 ◽  
pp. 2150175
Author(s):  
Necati Basman ◽  
Mehmet Gokcen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Diffuse Reflectance Spectroscopy ◽  
Carbon Doping ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
High Carbon ◽  
X Ray ◽  
Carbon Doped ◽  
Surface Areas ◽  
Uv Visible

This study presents a simple electrochemical deposition route to obtain carbon-doped TiO2 films. The deposition of the films is carried out on silicon substrates from a mixture of methanol (CH3OH) and Titanium (IV) isopropoxide (Ti[OCH(CH3)2]4) solution using a simple two-electrode electrodeposition setup. The obtained films are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Visible diffuse reflectance spectroscopy (DRS) and conductivity measurements. Depending on the deposition conditions, both amorphous and crystalline TiO2 films could be obtained. It is found that carbon is doped both substitutionally and interstitially. High carbon doping (up to 18.96%) enables to obtain TiO2 film with narrowed bandgap and high conductivity to about 2.3 eV and [Formula: see text] S cm[Formula: see text], respectively. This study suggests that the proposed electrodeposition route offers an easy way of obtaining conductive and narrowed bandgap TiO2 films on large surface areas.

Improvements of Structural and Optical Properties of GaN/Al0.10Ga0.9N Multi-Quantum Wells by Isoelectronic In-doping

2001 ◽  
Vol 693 ◽  
Author(s):  
Lianshan Wang ◽  
Soo Jin Chua ◽  
Wenhong Sun
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Chemical Deposition ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Flow Rates ◽  
X Ray ◽  
In Doping ◽  
Metalorganic Chemical

Absratct:The effects of isoelectronic In-doping were studied on the structural and optical properties of 3-periods and 10-periods of GaN/Al0.10Ga0.90N multi quantum wells (MQWs). The GaN/Al40.10Ga0.90N MQWs were grown on u-GaN/sapphire via metalorganic chemical deposition (MOCVD) at 1050°C in H2 carrier gas. X-ray diffraction (XRD), and micro-Photoluminescence (PL) measurements revealed that In-doping into well layers improves the crystalline and optical properties of MQWs relative to those samples without In-doping. With increasing Trimethylindium (TMIn) flow rates from 4.2 mol/min to 42.6 mol/min, PL peaks from well layers obviously redshifted, due to the improvement of the strain along the interfaces between MQWS, irrespective of 3-periods or 10 periods MQWs. The improvement of the crystal quality was also confirmed by XRD.

scholarly journals Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Angela De Bonis ◽  
Agostino Galasso ◽  
Antonio Santagata ◽  
Roberto Teghil
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Target ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A MgB2target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

Deposition And Characterization of CNx Films

1994 ◽  
Vol 339 ◽  
Author(s):  
X. T. Cui ◽  
Z. H. Zhang ◽  
Q. Y. Chen ◽  
F. Romero-Borja ◽  
J. R. Liu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Ir Spectroscopy ◽  
Magnetron Sputtering ◽  
Annealing Effect ◽  
Single Bond ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Bonding Properties

ABSTRACTCNx films with x around 1.0 have been made by inverted cylindrical DC magnetron sputtering. RBS, XPS, IR spectroscopy, ERD and SEM were used to characterize the composition and bonding properties of the films, while X-ray diffraction was used for crystal structure determination. XPS data indicated the existence of the tetrahedral C3N4 phase in the CNx films, which was consistent with the C-N single bond suggested by IR spectra. The annealing effect on CNx films will also be discussed.

scholarly journals Extraction of Metal Arsenic from Waste Sodium Arsenate by Roasting with Charcoal Powder

Metals ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 542 ◽  
Author(s):  
Kang Yang ◽  
Wenqing Qin ◽  
Wei Liu
Keyword(s):  
Photoelectron Spectroscopy ◽  
Environmental Issues ◽  
X Ray Diffraction ◽  
Sodium Arsenate ◽  
Scanning Electron Micrograph ◽  
X Ray ◽  
Roasting Temperature ◽  
Promising Source ◽  
N2 Flow Rate ◽  
Production Industry

The current paper explored the directly reductive decomposition of waste sodium arsenate by roasting it with charcoal powder to volatilize less toxic As0 and to simultaneously obtain sodium salts with potential commercial value, serving the purpose of developing a more sustainable route to deal with the environmental issues faced by the antimony production industry in China. The process was firstly evaluated by thermogravimetric (TG) analysis and thermochemical calculations. The effects of N2 flow rate, roasting temperature, dosage of charcoal powder, and roasting time were then investigated. The results showed that the arsenic extraction could reach 99.84% under optimal conditions. The roasting residue, containing arsenic as low as 0.0598%, was a promising source for the production of Na2CO3 as expected. In addition, X-ray diffraction (XRD), scanning electron micrograph (SEM), and X-ray photoelectron spectroscopy (XPS) were conducted to reveal the roasting mechanism and formation of metal arsenic was thereby confirmed.

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