Routes towards Novel Active Pressure Sensors in SOI Technology

2011 ◽  
Vol 276 ◽  
pp. 145-155
Author(s):  
Benoit Olbrechts ◽  
Bertrand Rue ◽  
Thomas Pardoen ◽  
Denis Flandre ◽  
Jean Pierre Raskin
Keyword(s):  
Finite Elements ◽  
Strain Distribution ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Stress Strain ◽  
Pressure Transducers ◽  
Active Devices ◽  
Active Pressure ◽  
Soi Technology

In this paper, novel pressure sensors approach is proposed and described. Active devices and oscillating circuits are directly integrated on very thin dielectric membranes as pressure transducers. Involved patterning of the membrane is supposed to cause a drop of mechanical robustness. Finite elements simulations are performed in order to better understand stress/strain distribution and as an attempt to explain the early burst of patterned membranes. Smart circuit designs are reported as solutions with high sensitivity and reduced footprint on membranes.

Research on the Electronic Strain Piezo Gauge Based on the Shell

2011 ◽  
Vol 383-390 ◽  
pp. 4949-4954
Author(s):  
Xin E Li ◽  
Jing Zu
Keyword(s):  
Finite Elements ◽  
Theoretical Analysis ◽  
Strain Distribution ◽  
Mechanical Characteristics ◽  
Chamber Pressure ◽  
Stress Strain ◽  
Good Linearity ◽  
Special Instrument

Utilizing the characteristics of the special instrument of testing the chamber pressure—the electronic Piezo Gauge. Taking the electronic Piezo Gauge’s yend cover as the elastic sensitive component. a novel strain electronic Piezo Gauge is developed. In this paper, Theoretical analysis has been made about mechanical characteristics of the electronic Piezo Gauge shell. The simulation of stress, strain distribution and model of the elastic sensitive components has been conducted through finite elements software ANSYS. Meanwhile test experiments were carried out, and the experiment result prove that the electronic strain Piezo Gauge has good linearity and stability.

scholarly journals A Novel Approach for Active Pressure Sensors in Thin Film SOI Technology

2011 ◽  
Vol 25 ◽  
pp. 43-46 ◽  
Author(s):  
B. Olbrechts ◽  
B. Rue ◽  
T. Pardoen ◽  
D. Flandre ◽  
J.-P. Raskin
Keyword(s):  
Thin Film ◽  
Pressure Sensors ◽  
Active Pressure ◽  
Novel Approach ◽  
Soi Technology

High-Resolution and High-Sensitivity Flexible Capacitive Pressure Sensors Enhanced by a Transferable Electrode Array and a Micropillar–PVDF Film

2021 ◽  
Vol 13 (6) ◽  
pp. 7635-7649
Author(s):  
Zebang Luo ◽  
Jing Chen ◽  
Zhengfang Zhu ◽  
Lin Li ◽  
Yi Su ◽  
...  
Keyword(s):  
High Resolution ◽  
Pressure Sensors ◽  
Electrode Array ◽  
High Sensitivity ◽  
Pvdf Film

Pollen-Shaped Hierarchical Structure for Pressure Sensors with High Sensitivity in an Ultrabroad Linear Response Range

2020 ◽  
Vol 12 (49) ◽  
pp. 55362-55371
Author(s):  
Tingting Zhao ◽  
Li Yuan ◽  
Tongkuai Li ◽  
Longlong Chen ◽  
Xifeng Li ◽  
...  
Keyword(s):  
Hierarchical Structure ◽  
Linear Response ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Response Range ◽  
Linear Response Range

Ga1−xAlxAs material for high-sensitivity pressure sensors

1982 ◽  
Vol 18 (15) ◽  
pp. 644 ◽  
Author(s):  
A.K. Saxena
Keyword(s):  
Pressure Sensors ◽  
High Sensitivity

Strain field determination in III–V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale

2017 ◽  
Vol 26 (1-2) ◽  
pp. 1-8
Author(s):  
Nikoletta Florini ◽  
George P. Dimitrakopulos ◽  
Joseph Kioseoglou ◽  
Nikos T. Pelekanos ◽  
Thomas Kehagias
Keyword(s):  
Finite Elements ◽  
Strain Field ◽  
Strain Distribution ◽  
Elastic Strain ◽  
Growth Direction ◽  
Current Status ◽  
Interface Plane ◽  
Fe Method ◽  
Semiconductor Nanostructure

AbstractWe are briefly reviewing the current status of elastic strain field determination in III–V heteroepitaxial nanostructures, linking finite elements (FE) calculations with quantitative nanoscale imaging and atomistic calculation techniques. III–V semiconductor nanostructure systems of various dimensions are evaluated in terms of their importance in photonic and microelectronic devices. As elastic strain distribution inside nano-heterostructures has a significant impact on the alloy composition, and thus their electronic properties, it is important to accurately map its components both at the interface plane and along the growth direction. Therefore, we focus on the determination of the stress-strain fields in III–V heteroepitaxial nanostructures by experimental and theoretical methods with emphasis on the numerical FE method by means of anisotropic continuum elasticity (CE) approximation. Subsequently, we present our contribution to the field by coupling FE simulations on InAs quantum dots (QDs) grown on (211)B GaAs substrate, either uncapped or buried, and GaAs/AlGaAs core-shell nanowires (NWs) grown on (111) Si, with quantitative high-resolution transmission electron microscopy (HRTEM) methods and atomistic molecular dynamics (MD) calculations. Full determination of the elastic strain distribution can be exploited for band gap tailoring of the heterostructures by controlling the content of the active elements, and thus influence the emitted radiation.

scholarly journals A Distributed Plasticity Approach for Steel Frames Analysis Including Strain Hardening Effects

2019 ◽  
Author(s):  
Andrius Grigusevičius ◽  
Gediminas Blaževičius
Keyword(s):  
Finite Elements ◽  
Plastic Hinge ◽  
Steel Frames ◽  
Physical Models ◽  
3D Fem ◽  
Stress Strain ◽  
Numerical Application ◽  
Element Analysis ◽  
Plastic Deformations ◽  
Elastic Plastic

This paper focuses on the creation and numerical application of physically nonlinear plane steel frames analysis problems. The frames are analysed using finite elements with axial and bending deformations taken into account. Two nonlinear physical models are used and compared – linear hardening and ideal elastic-plastic. In the first model, distributions of plastic deformations along the elements and across the sections are taken into account. The proposed method allows for an exact determination of the stress-strain state of a rectangular section subjected to an arbitrary combination of bending moment and axial force. Development of plastic deformations in time and distribution along the length of elements are determined by dividing the structure (and loading) into the parts (increments) and determining the reduced modulus of elasticity for every part. The plastic hinge concept is used for the analysis based on the ideal elastic-plastic model. The created calculation algorithms have been fully implemented in a computer program. The numerical results of the two problems are presented in detail. Besides the stress-strain analysis, the described examples demonstrate how the accuracy of the results depends on the number of finite elements, on the number of load increments and on the physical material model. COMSOL finite element analysis software was used to compare the presented 1D FEM methodology to the 3D FEM mesh model analysis.

scholarly journals Wearable Pressure Sensors Based on Carbonized Graphene Coated Waste Paper Aerogel

2021 ◽  
Author(s):  
Ang Li ◽  
Ce Cui ◽  
Weijie Wang ◽  
Yue Zhang ◽  
Jianyu Zhai ◽  
...  
Keyword(s):  
3D Structure ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Waste Paper ◽  
Low Density ◽  
Detection Range ◽  
Simple Strategy ◽  
Simple Filtration ◽  
Piezoresistive Pressure Sensors ◽  
Main Component

Abstract Graphene is complexed with cellulose fibers to construct 3D aerogels, which is generally considered to be an environmentally friendly and simple strategy to achieve wide sensing, high sensitivity and low detection of wearable piezoresistive pressure sensors. Here, graphene is incorporated into waste paper fibers with cellulose as the main component to prepare graphene coated waste paper aerogel (GWA) using a simple “filtration-oven drying” method under atmospheric pressure. The GWA was further annealed to obtain the carbonized graphene coated waste paper aerogel (C-GWA) to achieve low density and excellent resilience. The result shows that the C-GWA has a rough outer surface due to the 3D structure formed by interpenetrated fibers and the carbon skeleton with wrinkles. The sensor based on GCA shows low density (25mg/cm3), a wide detection range of 0-132 kPa, an ultra-low detection limit of 2.5 Pa (a green bean, ≈ 53.4 mg), and a high sensitivity of 31.6 kPa− 1. In addition, the sensor based on C-GWA with the excellent performance can be used to detect human motions including the pulse of the human body, cheek blowing and bending of human joints. The result indicates that the sensor based on C-GWA shows great potential for wearable electronic products.

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