SABER-Based Simulation for Compact Dynamic Electro-Thermal Modeling Analysis of Power Electronic Devices

2011 ◽  
Vol 291-294 ◽  
pp. 1704-1708
Author(s):  
Ming Chen ◽  
An Hu ◽  
Yong Tang ◽  
Bo Wang
Keyword(s):  
Temperature Distribution ◽  
Network Model ◽  
Thermal Model ◽  
Electronic Devices ◽  
Power Converter ◽  
Junction Temperature ◽  
Power Electronic ◽  
Electrical Model ◽  
Thermal Component ◽  
Infrared Thermal Imaging

Power electronic modules including insulated gate bipolar transistor (IGBT) are widely used in the field of power converter application. The temperature distribution inside these modules becomes more important for electrical characteristics, reliability and lifetime of integrated power electronic modules. In this paper, a seven-layer compact RC thermal component network model based on the physical structure is presented. A dynamic electro-thermal model, which is composed of electrical model, compact RC thermal component network model and electro-thermal interface is developed for the IGBT. These models interact with each other to calculate the temperature of each layer of module and parameters of each model. The thermal model determines the evolution of the temperature distribution within the thermal network and thus determines the instantaneous junction temperature used by the electrical model. Such built dynamic electro-thermal simulation methodology is implemented in the Saber circuit simulator, and the simulation result is validated by the experimental study, which adopted with infrared thermal imaging camera. The built dynamic electro-thermal model could be helpful for the research on operation performance and heat sink design for such power electronic devices.

scholarly journals Development of Technology for High-Power Industry Converters

2019 ◽  
Vol 8 (10) ◽  
pp. 3130-3132 ◽  
Keyword(s):  
Wind Turbines ◽  
High Power ◽  
Electronic Devices ◽  
Relevant Information ◽  
Power Industry ◽  
Power Converter ◽  
Power Electronic ◽  
Photo Voltaic ◽  
Universal Procedure

The power stable of the converters is actually coming from some milliwatts (as in a cellphone) to dozens of megawatts in an HVDC gearbox body. Along with "classic" electronic devices, power streams, as well as current, are actually utilized to hold relevant information, whereas along with power electronic devices, they lug power. This inverter may magnify source of power like gas- mobiles, little wind turbines, as well as photo-voltaic assortments (i.e. it agrees with for circulated power treatments). The principles of resources and also changes are actually described and also categorized. Coming from the general regulations of resource propinquities, a universal procedure of power converter formation exists.

scholarly journals A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

2016 ◽  
Vol 2016 ◽  
pp. 1-12 ◽  
Author(s):  
Andreas Maerz ◽  
Teresa Bertelshofer ◽  
Mark-M. Bakran
Keyword(s):  
Boundary Conditions ◽  
Thermal Model ◽  
Short Circuit ◽  
Gate Oxide ◽  
Power Converter ◽  
Junction Temperature ◽  
Voltage Source ◽  
Model Description ◽  
General Description ◽  
Testing Procedures

The accurate prediction of the SiC MOSFET withstanding time for single fault events greatly influences the requirements for device protection circuits for these devices in power converter applications, like voltage source inverters or power electronic transformers. For this reason, a thermal model, based on the structural design and the physical dimensions of the chip as well as material properties of 4H-SiC, is proposed. This article gives a general description of the thermal behaviour of vertical SiC MOSFET under various driving and boundary conditions in case of a short-circuit event. The thermal model substitutes destructive tests of a device for an individual set of boundary conditions of an occurring fault event. The validity of the analytically parametrised thermal model is verified by experimental short-circuit tests of state-of-the-art vertical SiC MOSFETs for a set of various boundary conditions. The investigated thermal model can furthermore be used to standardise different gate-oxide degradation values from the literature for means of lifetime prediction of the gate oxide for an individual application under repetitive occurring fault or overload conditions. These manufacturer specific reported values measured with no standardised testing procedures can be translated into a maximum junction temperature, which is repeatedly reached. The thermal model therefore provides a unifying parameter for the gate-oxide lifetime calculation for an individual chip and application.

scholarly journals Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss

2022 ◽  
Vol 8 ◽  
pp. 163-170
Author(s):  
Lingfeng Shao ◽  
Guoqing Xu ◽  
Weiwei Wei ◽  
Xichun Zhang ◽  
Huiyun Li ◽  
...  
Keyword(s):  
Detection Method ◽  
Electronic Devices ◽  
Junction Temperature ◽  
Power Electronic ◽  
Temperature Detection ◽  
Off Time

Electro-Thermal Modeling of Solar Photovoltaic Arrays

2011 ◽  
Author(s):  
Khairy Sayed ◽  
Mazen Abdel-Salam ◽  
Mahmoud Ahmed ◽  
Adel A. Ahmed
Keyword(s):  
Thermal Model ◽  
Heat Dissipation ◽  
Life Time ◽  
Photovoltaic Cell ◽  
Junction Temperature ◽  
Photovoltaic Module ◽  
Electrical Model ◽  
Theoretical Predictions ◽  
Instantaneous Temperature ◽  
Reported Data

The objective of the present work is to develop a dynamic electro-thermal model for photovoltaic cells to optimize both electrical and thermal performance of such systems. The thermal model is developed by generating the equivalent RC network (resistance-capacitance) parameters. Then, the thermal model is combined with electrical model and implemented by PSIM simulation program to evaluate performance parameters for any predefined operating condition. The electro-thermal model predicts instantaneous temperature of photovoltaic device at the actual circuit working conditions. Consequently, the temperature rise during the system startup and during load transient is investigated. The thermal model predicts the junction temperature based on transient heat dissipation calculated from the electrical model. The calculated junction temperature is used as an input to the electrical model. The factors that control the junction temperature are module reaching irradiance, optical properties of the photovoltaic cell, photovoltaic conversion efficiency, heat transfer and electrical characteristic of the load. If the junction temperature exceeds a certain limit, it causes hotspot on the photovoltaic module surface. Consequently, the formed hotspots result in reducing the system efficiency and life time. The predicted dynamic behavior of photovoltaic cell is compared with theoretical predictions and other reported data in order to validate the developed model. The obtained results show a good concurrence with the predictions of other works. Detailed comparisons between predicted and measured results are reported and discussed.

scholarly journals Development of junction temperature monitoring platform for IGBT charging device adapted to the integration of charging, light and storage

2021 ◽  
Vol 292 ◽  
pp. 01020
Author(s):  
Yu Wenbin ◽  
Wu Bin ◽  
Jia Junguo ◽  
Zhang Feng
Keyword(s):  
High Voltage ◽  
Electronic Devices ◽  
Measured Data ◽  
Fault Analysis ◽  
Junction Temperature ◽  
Power Electronic ◽  
Temperature Calculation ◽  
New Energy ◽  
And Storage ◽  
Monitoring Platform

With the continuous development of new energy, the power and capacity configuration of charging devices is getting larger and larger, and there are more and more data nodes that charging devices need to manage and monitor. In order to improve the security of the system, it is necessary to monitor the node information of each device in real time. This paper summarizes the data required for high-voltage modelling and junction temperature calculation of high-voltage power electronic devices to develop a monitoring platform for charging devices. The platform records the data of each module in the charging device online, and provides measured data for equipment selection and fault analysis of the charging device. At the end of the article, some experiments were carried out to verify the operation effect of the monitoring platform.

scholarly journals Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4176 ◽  
Author(s):  
Chaoqun Jiao ◽  
Juan Zhang ◽  
Zhibin Zhao ◽  
Zuoming Zhang ◽  
Yuanliang Fan
Keyword(s):  
Power Electronics ◽  
Printed Circuit Board ◽  
Electronic Devices ◽  
Rogowski Coil ◽  
Bipolar Transistors ◽  
Circuit Board ◽  
Power Electronic ◽  
Insulated Gate Bipolar Transistors ◽  
Printed Circuit ◽  
Internal Structures

With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.

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