Hydrodynamic Study of Terahertz Three-Dimensional Plasma Resonances in InGaAs Diodes

2011 ◽  
Vol 324 ◽  
pp. 415-418
Author(s):  
Pierre Ziadé ◽  
Hugues Marinchio ◽  
Christophe Palermo ◽  
Ziad Kallassy ◽  
Luca Varani
Keyword(s):  
Electric Field ◽  
Field Effect Transistors ◽  
Plasma Frequency ◽  
Three Dimensional ◽  
Optical Excitation ◽  
Poisson Solver ◽  
Hydrodynamic Approach ◽  
Field Response ◽  
Hydrodynamic Study ◽  
Excitation Conditions

We investigate the presence of plasma resonances in InGaAs n+−n−n+ diodes under different optical excitation conditions. In particular, we study the case of diodes submitted to an optical photoexcitation presenting a beating in the terahertz frequency domain. For this purpose, we calculate the electric field response in the middle of the n and n+ regions using a hydrodynamic approach self-consistently coupled to a one-dimensional Poisson solver. In particular, the analysis of the electric field response to an optical beating as a function of the doping and the geometry of the devices allows us to evidence in all the considered cases the presence of resonances in both n and n+ regions. However, while the observed resonances agree with the theoretical 3D plasma frequency in the n+ external regions, we point out a shift towards higher frequencies in the n region. We show that this shift towards the n+ 3D plasma frequency is due to the strong coupling between the two region modes, and tends to disappear when the n region lengthens, whereas the influence of the n+ regions length on the resonance frequency is negligible. Moreover, we show that the amplitude of the plasma resonances can be enhanced at high doping levels and by increasing the level of the optical photoexcitation. The obtained results show clearly that the resonances associated with 3D plasma waves in InGaAs diodes lie in the THz domain for typical values of dopings and lengths, thus opening new possibilities to exploit not only field effect transistors but also diodes as solid-state terahertz devices operating at room temperature.

Origin of electric field response signals in gate modulation spectroscopy for organic field effect transistors

2020 ◽  
Vol 87 ◽  
pp. 105934
Author(s):  
Katsuichi Kanemoto ◽  
Ayato Iida ◽  
Kazunori Iwamitsu ◽  
Kyohei Higashiyama ◽  
Hiroyuki Kumazoe ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Modulation Spectroscopy ◽  
Field Response

Controlled‐source audiofrequency magnetotelluric responses of three‐dimensional bodies

Geophysics ◽  
1991 ◽  
Vol 56 (2) ◽  
pp. 255-264 ◽  
Author(s):  
N. B. Boschetto ◽  
G. W. Hohmann
Keyword(s):  
Plane Wave ◽  
Electric Field ◽  
Near Field ◽  
Three Dimensional ◽  
Sole Source ◽  
Far Field ◽  
Field Zone ◽  
Wave Source ◽  
Controlled Source ◽  
Field Response

Modeling the controlled‐source audiofrequency magnetotelluric (CSAMT) responses of simple three‐dimensional (3-D) structures due to a grounded electric bipole confirms that the CSAMT technique accurately simulates plane‐wave results in the far‐field zone of the transmitter. However, at receiver sites located above large conductive or resistive bodies, the presence of the inhomogeneity extends or reduces, respectively, the frequency range of the far‐field zone. Measurements made on the surface beyond a large 3-D body display a small but spatially extensive effect due to decay of the artificial primary field. Situating a 3-D inhomogeneity beneath the source permits an evaluation of “source overprint” effects. When such a body is resistive, a slight shift in the near‐field response to higher frequencies occurs. When a body below the transmitter is conductive, it is possible to make far‐field measurements closer to the transmitter or lower in frequency. However, as the size of the conductor and its secondary‐field response increases, large transition‐zone responses distort the data. For both a plane‐wave source and a finite source, current channeling into a 3-D conductor from conductive overburden enhances the response of a target. The modeled response of a dike‐like conductor shows no better results for either the broadside or collinear configuration. The location and extent of such a body are better defined when measuring the electric field perpendicular to the strike of the prism, but resistivity estimates are better when using the electric field parallel to the strike of the prism, irrespective of transmitter orientation. Models designed from data collected at Marionoak, Tasmania, yield results which indicate that the thin, vertical graphitic unit intersected by drilling is detectable by the CSAMT method, but probably is not the sole source of the large anomaly seen in the CSAMT data.

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Three dimensional band-filling control of complex oxides triggered by interfacial electron transfer

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Meng Meng ◽  
Yuanwei Sun ◽  
Yuehui Li ◽  
Qichang An ◽  
Zhenzhen Wang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Field Effect ◽  
Essential Role ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Complex Oxides ◽  
Band Filling ◽  
Local Lattice ◽  
Oxygen Migration ◽  
Oxide Heterostructure

AbstractThe d-band-filling of transition metals in complex oxides plays an essential role in determining their structural, electronic and magnetic properties. Traditionally, at the oxide heterointerface, band-filling control has been achieved via electrostatic modification in the structure of field-effect transistors or electron transfer, which is limited to the quasi-two-dimension at the interface. Here we report a three-dimensional (3D) band-filling control by changing the local lattice coordination in a designed oxide heterostructure. At the LaCoO3/LaTiO3 heterointerface, due to the Fermi level mismatch, electrons transfer from LaTiO3 to LaCoO3. This triggers destabilisation of the CoO6 octahedrons, i.e. the formation of lattice configurations with a reduced Co valence. The associated oxygen migration results in the 3D topotactic phase transition of LaCoO3. Tuned by the thickness of LaTiO3, different crystalline phases and band-fillings of Co occur, leading to the emergence of different magnetic ground states.

scholarly journals Simulation of Thermal and Electric Field Distribution in Packaged Sausages Heated in a Stationary Versus a Rotating Microwave Oven

Foods ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 1622
Author(s):  
Wipawee Tepnatim ◽  
Witchuda Daud ◽  
Pitiya Kamonpatana
Keyword(s):  
Temperature Distribution ◽  
Electric Field ◽  
Three Dimensional ◽  
Development Stage ◽  
Microwave Oven ◽  
Computational Time ◽  
Plastic Package ◽  
Heating Uniformity ◽  
The Cost ◽  
Good Agreement

The microwave oven has become a standard appliance to reheat or cook meals in households and convenience stores. However, the main problem of microwave heating is the non-uniform temperature distribution, which may affect food quality and health safety. A three-dimensional mathematical model was developed to simulate the temperature distribution of four ready-to-eat sausages in a plastic package in a stationary versus a rotating microwave oven, and the model was validated experimentally. COMSOL software was applied to predict sausage temperatures at different orientations for the stationary microwave model, whereas COMSOL and COMSOL in combination with MATLAB software were used for a rotating microwave model. A sausage orientation at 135° with the waveguide was similar to that using the rotating microwave model regarding uniform thermal and electric field distributions. Both rotating models provided good agreement between the predicted and actual values and had greater precision than the stationary model. In addition, the computational time using COMSOL in combination with MATLAB was reduced by 60% compared to COMSOL alone. Consequently, the models could assist food producers and associations in designing packaging materials to prevent leakage of the packaging compound, developing new products and applications to improve product heating uniformity, and reducing the cost and time of the research and development stage.

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